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NTE2969
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Avalanche Rugged Technology
D Rugged Gate Oxide Technology
D Low Input Capacitance
D Improved Gate Charge
D Extended Safe Operating Area
D Lower Leakage Current
D Low Static Drain–Source On–State Resistance
Absolute Maximum Ratings:
Drain–Source Voltage, V
Drain Current, I
D
Continuous
TC = +25°C 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TC = +100°C 15.1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed (Note 1) 100A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
Gate Current (Pulsed), I
Single Pulsed Avalanche Energy (Note 2), E
Avalanche Current (Note 1), I
Repetitive Avalanche Energy (Note 1), E
Peak Diode Recovery dv/dt (Note 3), dv/dt 4.0V/ns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), P
Derate Above 25°C 2.22W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Thermal Resistance:
Maximum Junction–to–Case, R
Typical Case–to–Sink, R
Maximum Junction–to–Ambient, R
DSS
GS
GM
AS
stg
thCS
D
thJC
AR
thJA
AS
J
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
0.45°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.24°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1429mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
27.8mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
278W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300°C. . . . . . . . . . . . . .
40°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2. L = 4mH, IAS = 25A, VDD = 50V, RG = 27Ω, Starting TJ = +25°C.
Note 3. ISD ≤ 25A, di/dt ≤ 320A/µs, VDD ≤ BV
, Starting TJ = +25°C.
DSS
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage BV
Breakdown Voltage Temperature
DSSVGS
DBV/DT
ID = 250µA
J
Coefficient
Gate Threshold Voltage V
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Zero Gate Voltage Drain Current I
Static Drain–Source ON Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Source–Drain Diode Ratings and Characteristics
GS(th)VDS
GSS
GSS
DSS
VGS = 30V – – 100 nA
VGS = –30V – – –100 nA
VDS = 400V, VGS = 0 – – 10 µA
VDS = 320V, TC = +1 50°C – – 100 µA
DS(on)VGS
VDS = 50V, ID = 12.5A, Note 4 – 18.91 – mhos
fs
VGS = 0V, VDS = 25V, f = 1MHz – 3180 4130 pF
iss
oss
rss
d(on)
VDD = 200V
Note 4, Note 5
r
d(off)
f
VGS = 10V, ID = 25A, VDS = 320V,
g
Note 4, Note 5
gs
gd
= 0V, ID = 250µA 400 – – V
– 0.20 – V/°C
= 5V, ID = 250µA 2.0 – 4.0 V
= 10V, ID = 12.5A, Note 4 – – 0.2 Ω
– 435 500 pF
– 200 240 pF
= 25A, RG = 5.3Ω,
, ID
– 22 55 ns
– 22 60 ns
– 127 260 ns
– 38 85 ns
– 140 182 nC
– 21 – nC
– 64.8 – nC
Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
Reverse Recovery Charge
SM
Q
(Body Diode) – – 25 A
S
(Body Diode) Note 1 – – 100 A
TJ = +25°C, IS = 25A, VGS = 0V, Note 4 – – 1.5 V
SD
TJ = +25°C, IF = 25A, dIF/dt = 100A/µs – 484 – ns
rr
rr
– 7.6 – µC
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 250µs, Duty Cycle ≤ 2%.
Note 5. Essentially independent of operating temperature.
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.190 (4.82)
.787
(20.0)
.591
(15.02)
.787
(20.0)
.615 (15.62)
.126 (3.22) Dia
GDS
.215 (5.47)
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