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NTE2976
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Low Input Capacitance
D Low Static R
D Fast Switching Time
D Guaranteed Avalanche Resistance
Applications:
D Switching Power Supply of AC 240V Input
D High Voltage Power Supply
D Inverter
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage, V
Gate–Source Voltage, V
Drain Current, I
Continuous DC 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Pulse Width ≤ 10µs, Duty Cycle ≤ 1/100) 18A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous DC Source Current, I
Total Power Dissipation, P
Repetitive Avalanche Current (Tch = +150°C), I
Single Avalanche Energy (Tch = +25°C), E
Repetitive Avalanche Energy (Tch = +25°C), E
Operating Channel Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Dielectric Strength (Terminals–to–Case, AC, 1 minute), V
Mounting Torque, TOR
Maximum 0.5N•m. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Recommended 0.3N•m. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DS(on)
DSS
GSS
D
S
T
AR
AS
AR
ch
stg
thJC
dis
700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
190mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2kV. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate–Source Leakage Current I
Forward Transconductance g
Static Drain–Source On–State Resistance R
Gate Threshold Voltage V
Source–Drain Diode Forward Voltage V
Total Gate Charge Q
Input Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Turn–On Time t
Turn–Off Time t
(BR)DSSID
DSS
GSS
DS(on)ID
.402 (10.2) Max
.224 (5.7) Max
TH
SD
iss
rss
oss
on
off
= 1mA, VGS = 0V 700 – – V
VDS = 700V, VGS = 0V – – 250 µA
VGS = ±30V, VDS = 0V – – ±0.1 µA
ID = 3A, VDS = 10V 3 5 – S
fs
= 3A, VGS = 10V – 1.5 2.0 Ω
ID = 1mA, VDS = 10V 2.5 3.0 3.5 V
IS = 3A, VGS = 0V – – 1.5 V
VDD = 400V, VGS = 10V, ID = 6A – 35 – nC
g
VDS = 10V, VGS = 0V, f = 1MHz – 1250 – pF
– 250 – pF
– 530 – pF
ID = 3A, RL = 50Ω, VGS = 10V – 60 110 ns
– 160 250 ns
.173 (4.4)
Max
.114 (2.9)
.122 (3.1)
Max
Dia
.295
(7.5)
.669
(17.0)
Max
GDS
.531
(13.5)
Min
.100 (2.54) .059 (1.5) Max
.165
(4.2)
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