Datasheet NTE295 Specification

NTE295

Silicon NPN Transistor

RF Power Output, Driver

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Collector–Base Voltage, V
Collector–Emitter Voltage (R
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous 1.0A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak 1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Dissipation (TA = +25°C), P
Collector Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T

CBO

= 150Ω), V

BE

CEO

EBO

= +25°C), P

C

stg

CER

C

C

J

75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

75V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

45V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

750mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V

Emitter–Base Breakdown Voltage V
DC Current Gain h
Current Gain Bandwidth Product f
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Output Capacitance C
Output Power P
Collector Efficiency η 60 – – %

(TA = +25°C unless otherwise specified)

CBO

EBO
(BR)CBOIC
(BR)CERIC

V

(BR)CEOIC
(BR)EBOIE

FE

T
CE(sat)IC
BE(sat)IC

ob

VCB = 40V, IE = 0 – – 1.0 µA
VEB = 4V, IC = 0 – – 1.0 µA

= 10µA, IE = 0 75 – – V
= 1mA, RBE = 150Ω 75 – – V
= 1mA, RBE = ∞ 45 – – V

= 10µA, IC = 0 5 – – V
VCE = 5V, IC = 500mA 60 – 320
VCE = 10V, IC = 50mA 180 250 –

= 500mA, IB = 50mA – 0.2 0.6 V

= 500mA, IB = 50mA – 0.9 1.2 V
VCB = 10V, f = 1MHz – 15 25 pF
VCC = 12V, f = 27MHz, Pi = 35mW 1.0 1.8 – W

O

.450

(11.4)

Max

.655

(16.6)

Max

.330 (8.38) Max

.175

(4.45)

Max

.118

(3.0)

Dia

.030 (.762) Dia

.130 (3.3)

Max

ECB

.090 (2.28)