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NTE2945
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Low Static Drain–Source ON Resistance
D Improved Inductive Ruggedness
D Fast Switching Times
D Low Input Capacitance
D Extended Safe Operating Area
D Improved High Temperature Reliability
D TO220 Type Isolated Package
Absolute Maximum Ratings:
Drain–Source Voltage (Note 1), V
Drain–Gate Voltage (R
Gate–Source Voltage, V
Drain Current, I
D
= 1MΩ, Note 1), V
GS
GS
Continuous
= +25°C 5.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
T
= +100°C 3.9A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
Pulsed (Note 2) 40A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current (Pulsed), I
GM
Single Pulsed Avalanche Energy (Note 3), E
Avalanche Current, I
Total Power Dissipation (T
AS
= +25°C), P
C
Derate Above 25°C 0.32W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), T
Thermal Resistance:
Maximum Junction–to–Case, R
Typical Case–to–Sink (Mounting surface flat, smooth, and greased), R
Maximum Junction–to–Ambient (Free Air Operation), R
DSS
DGR
AS
D
J
stg
thJC
thJA
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
157mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
L
+300°C. . . . . . . . . . . . . .
3.12K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thCS
0.5K/W. . . . . . .
62.5K/W. . . . . . . . . . . . . . . . . . . .
Note 1. T
= +25° to +150°C.
J
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 3. L = 9.1mH, V
= 50V, RG = 25Ω, Starting TJ = +25°C.
DD
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Drain–Source Breakdown Voltage BV
Gate Threshold Voltage V
Gate–Source Leakage Forward I
Gate–Source Leakage Reverse I
Zero Gate Voltage Drain Current I
DSSVGS
GS(th)VDS
GSS
GSS
DSS
VGS = 20V – – 100 nA
VGS = –20V – – –100 nA
VDS = Max. Rating, VGS = 0 – – 250 µA
VDS = 0.8 Max. Rating, TC = +125°C – – 1000 µA
Static Drain–Source ON Resistance R
Forward Transconductance g
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn–On Delay Time t
Rise Time t
Turn–Off Delay Time t
Fall Time t
DS(on)VGS
VDS ≥ 50V, ID = 5A, Note 4 5.8 8.7 – mhos
fs
VGS = 0V, VDS = 25V, f = 1MHz – 1500 – pF
iss
oss
rss
d(on)
VDD = 0.5 BV
(MOSFET switching times are essentially
r
independent of operating temperature)
independent of operating temperature)
d(off)
f
Total Gate Charge
(Gate–Source Plus Gate–Drain)
Gate–Source Charge Q
Gate–Drain (“Miller”) Charge Q
Q
VGS = 10V, ID = 10A, VDS = 0.8 Max.
g
Rating, (Gate charge is essentially
gs
independent of operating temperature)
independent of operating temperature)
gd
Source–Drain Diode Ratings and Characteristics
= 0v, ID = 250µA 450 – – V
= VGS, ID = 250µA 2.0 – 4.0 V
= 10V, ID = 5A, Note 4 – – 0.55 Ω
– 170 – pF
– 75 – pF
= 10A, ZO = 9.1Ω,
DSS, ID
– 14 21 ns
– 27 41 ns
– 50 75 ns
– 24 36 ns
– – 79 nC
– 1013 – nC
– 32.3 – nC
Continuous Source Current I
Pulse Source Current I
Diode Forward Voltage V
Reverse Recovery Time t
SM
(Body Diode) – – 10 A
S
(Body Diode) Note 2 – – 40 A
TJ = +25°C, IS = 10A, VGS = 0V, Note 4 – – 2 V
SD
TJ = +25°C, IF = 10A, dIF/dt = 100A/µs – 370 – ns
rr
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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.402 (10.2) Max
.224 (5.7) Max
.295
(7.5)
.122 (3.1)
Dia
.173 (4.4)
Max
.114 (2.9)
Max
.669
(17.0)
Max
GDS
.531
(13.5)
Min
.100 (2.54) .059 (1.5) Max
.165
(4.2)
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