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NTE287 (NPN) & NTE288 (PNP)
Silicon Complementary Transistors
High Voltage, General Purpose Amplifier
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
NTE287 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE288 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
Total Device Dissipation @ T
Derate Above +25°C 5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation @ T
Derate Above +25°C 12mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Ambient, R
Thermal Resistance, Junction–to–Case, R
CEO
CBE
EBO
A
C
C
= +25°C, P
= +25°C, P
stg
D
D
J
thJC
thJA
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
625mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.5W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200°C/mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
83.3°C/mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage
NTE287
NTE288 5 – – V
Collector Cutoff Current
NTE287
NTE288 – – 0.25 µA
Emitter Cutoff Current
NTE287
NTE288 VEB = 3V, IC = 0 – – 0.1 µA
(TA = +25°C unless otherwise specified)
(BR)CEOIC
(BR)CBOIC
V
(BR)EBO
I
CBO
I
EBO
= 1mA, IB = 0, Note 1 300 – – V
= 100µA, IE = 0 300 – – V
IE = 100µA, IC = 0
VCB = 200V, IE = 0
VEB = 6V, IC = 0
6 – – V
– – 0.1 µA
– – 0.1 µA
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain
NTE287 & NTE288
NTE287 IC = 30mA, VCE = 10V 40 – –
NTE288 25 – –
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Small–Signal Characteristics
Current Gain – Bandwidth Product f
Collector–Base Capacitance
NTE287
NTE288 – – 6 pF
h
FE
CE(sat)IC
BE(sat)IC
C
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V 40 – –
IC = 10mA, VCE = 20V, f = 100MHz 50 – – MHz
T
cb
VCB = 20V, IE = 0, f = 1MHz
25 – –
= 20mA, IB = 2mA – – 0.5 V
= 20mA, IB = 2mA – – 0.9 V
– – 3 pF
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.100 (2.54)
.105 (2.67) Max
.205 (5.2) Max
.021 (.445) Dia Max
E B C
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
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