Datasheet NTE253, NTE254 Specification

NTE253 (NPN) & NTE254 (PNP)

Silicon Complementary Transistors

Darlington Power Amplifier

TO−126 Type Package

Description:

The NTE253 (NPN) and NTE254 (PNP) are silicon complementary Darlington transistors in a
TO−126 type case designed for general−purpose amplifier and low−speed switching applications.

Features:

D High DC Current Gain: hFE = 750 (Min) @ IC = 1.5A
D Monolithic Construction with Built−In Base−Emitter Resistors to Limit Leakage Multiplication

Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Base Current, I

C

B

Total Power Dissipation (TC = +25C), P
Operating Junction Temperature, T
Storage Temperature Range, T

CEO

CBO

EBO

D

J

stg

Thermal Resistance, Junction−to−Case, R

−55 to +150C..........................................

thJC

100V.....................................................

100V......................................................

5V..........................................................

4A.................................................................

100mA................................................................

40W............................................

+150C...............................................

3.13C/W....................................

Note 1. NTE253MCP is a matched complementary pair containing 1 each of NTE253 (NPN) and

NTE254 (PNP).

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector−Emitter Breakdown Voltage V

Collector Cutoff Current I

Emitter Cutoff Current I

(TA = +25C unless otherwise specified)

(BR)CEOIC

CEO

I

CBO

EBO

= 50mA, IB = 0, Note 1 100 − − V

VCE = 100V, IB = 0 − − 0.5 mA

VCE = 100V, IE = 0 − − 0.2 mA

VCE = 100V, IE = 0, TC = +100C − − 2.0 mA

VBE = 5V, IC = 0 − − 2.0 mA

Rev. 12−20

Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics

DC Current Gain h

Collector−Emitter Saturation Voltage V

Base−Emitter ON Voltage V

FE

CE(sat)IC

BE(on)

VCE = 3V, IC = 1.5A 750 − −

= 1.5A, IB = 30mA − − 2.5 V

VCE = 3V, IC = 1.5A − − 2.5 V

NTE253

C

B

B

E

NTE254

C

E

.311 (7.9)

Max

.150 (3.8)

.433

(11.0)

Max

.126 (3.2)

Dia

.6.2

(15.3)

Min

.110 (2.8)

Max

.030 (0.75)

EBC

.090 (2.3)