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NTE251 (NPN) & NTE252 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3
type case designed for general–purpose amplifier and low–frequency switching applications.
Features:
D High DC Current Gain @ IC = 10A:
= 2400 Typ (NTE251)
h
FE
= 4000 Typ (NTE252)
h
FE
D Collector–Emitter Sustaining Voltage: V
CEO(sus)
D Monolithic Construction with Built–In Base–Emitter Shunt Resistors
= 100V Min
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
EB
C
(TA = +25°C unless otherwise specified)
CEO
CB
Continuous 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 40A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Power Dissipation (T
B
= +25°C), P
C
D
Derate Above 25°C 0.915W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
J
thJC
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
160W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.09°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter SustainingVoltage V
CEO(sus)IC
Collector Cutoff Current I
I
Emitter Cutoff Current I
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
CE(sat)IC
BE(sat)IC
BE(on)
Dynamic Characteristics
Small–Signal Current Gain h
Magnitude of Common Emitter
|hfe| VCE = 3V, IC = 10A, f = 1MHz 4.0 – – MHz
Small–Signal Short–Circuit
Forward Current Transfer Ratio
CEO
CEX
EBO
FE
fe
= 100mA, IB = 0 100 – – V
VCE = 50V, IE = 0 – – 1.0 mA
VCE = 100V, V
VCE = 100V, V
= +150°C
T
A
= 1.5V – – 0.5 mA
BE(off)
BE(off)
= 1.5V,
– – 5.0 mA
VBE = 5V, IC = 0 – – 2.0 mA
VCE = 3V, IC = 10A 750 – 18000
VCE = 3V, IC = 20A 100 – –
= 10A, IB = 40mA – – 2.0 V
IC = 20A, IB = 200mA – – 3.0 V
= 20A, IB = 200mA – – 4.0 V
VCE = 3V, IC = 10A – – 2.8 V
VCE = 3V, IC = 10A, f = 1kHz 300 – –
Output Capacitance
C
VCB = 10V, IE = 0, f = 0.1MHz
ob
NTE251
NTE252
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Schematic Diagram
C
B
E
NPN PNP
B
pF
–
–
–
400
–
600
C
E
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.135 (3.45) Max
.350 (8.89)
.215 (5.45)
.430
(10.92)
Emitter
.875 (22.2)
Dia Max
Seating
Plane
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase
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