Datasheet NTE2312 Specification

NTE2312

Silicon NPN Transistor

High Voltage, High Speed Switch

Description:

The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115V and 220V switch–mode applications such as switching regulators, inverters, motor controls,
solenoid/relay drivers, and deflection circuits.

Absolute Maximum Ratings:

Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

CEO(sus)
CEV

EBO

Continuous 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Continuous 4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 8A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter Current, I

E

Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak (Note 1) 24A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

A

D

Derate Above 25°C 16mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Power Dissipation (T

= +25°C), P

C

D

Derate Above 25°C 640mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R

J

thJC

thJA

Lead Temperature (During Soldering, 1/8” from case, 5sec), T

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

700V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

9V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

2W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

80W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.56°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

62.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+275°C. . . . . . . . . . . . . . . . . . . . . . .

Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics (Note 2)

Collector–Emitter Sustaining Voltage V

CEO(sus)IC

Collector Cutoff Current I

Emitter Cutoff Current I
ON Characteristics (Note 2)
DC Current Gain h

Collector–Emitter Saturation Voltage V

Base–Emitter Saturation Voltage V

CE(sat)IC

BE(sat)IC

Dynamic Characteristics

Current–Gain Bandwidth Product f
Output Capacitance C
Switching Characteristics (Resistive Load)

CEV

EBO

FE

T
ob

= 10mA, IB = 0 400 – – V

V

= 700V, V

CEV

V

= 700V, V

CEV

= +100°C

T

C

= 1.5V – – 1 mA

BE(off)
BE(off)

= 1.5V,

– – 5 mA

VEB = 9V, Ic = 0 – – 1 mA

IC = 2A, VCE = 5V 8 – 60
IC = 5A, VCE = 5V 5 – 30

= 2A, IB = 0.4A – – 1 V
IC = 5A, IB = 1A – – 2 V
IC = 8A, IB = 2A – – 3 V
IC = 5A, IB = 1A, TC = +100°C – – 3 V

= 2A, IB = 0.4A – – 1.2 V
IC = 5A, IB = 1A – – 1.6 V
IC = 5A, IB = 1A, TC = +100°C – – 1.5 V

IC = 500mA, VCE = 10V, f = 1MHz 4 – – MHz
VCB = –10V, IE = 0, f = 0.1MHz – 110 – pF

Delay Time t
Rise Time t
Storage Time t
Fall Time t

VCC = 125V, IC = 5A,

d

IB1 = IB2 = 1A, tp = 25µs,

r

Duty Cycle ≤ 1%

Duty Cycle ≤ 1%

s

f

Switching Characteristics (Inductive Load), Clamped
Voltage Storage Time t
Crossover Time t

sv

c

IC = 5A, V
V

= 5V, TC = +100°C

BE(off)

= 300V, IB1 = 1A,

clamp

Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.

– 0.05 0.1 µs
– 0.8 1.5 µs
– 1.0 3.0 µs
– 0.15 0.7 µs

– 0.86 2.3 µs
– 0.14 0.7 µs

.420 (10.67)

Max

.110 (2.79)

.147 (3.75)

Dia Max

.070 (1.78) Max

Base

.100 (2.54) Collector/Tab

.500

(12.7)

Max

.250 (6.35)

Max

.500

(12.7)

Min

Emitter