Datasheet NTE2306, NTE2305 Specification

NTE2305 (NPN) & NTE2306 (PNP)

Silicon Complementary Transistors

High Voltage Power Amplifier

TO−3PN Type Package

Description:

The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO−3PN type
package designed for use in high power audio amplifier applications and high voltage switching regu­lator circuits.

Features:

D High Collector−Emitter Sustaining Voltage: V
D High DC Current Gain: h

= 35 Typ @ IC = 8A

FE

D Low Collector−Emitter Saturation Voltage: V

CEO(sus)

CE(sat)

Absolute Maximum Ratings:

Collector−Emitter Voltage, V
Collector−Base Voltage, V
Emitter−Base Voltage, V
Collector Current, I

C

CEO

CB

EB

Continuous 16A..................................................................

Peak (Note 1) 20A................................................................

Continuous Base Current, I
Power Dissipation (T

C

Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R

B

= +25C), P

stg

D

J

thJC

Note 1. Pulse Test: Pulse Width  5ms, Duty Cycle  10%.

= 160V

= 2V Max @ IC = 8A

160V.....................................................

160V........................................................

70V..........................................................

5A..........................................................

125W................................................

−65 to +150C..................................

−65 to +150C..........................................

1C/W.......................................

Electrical Character

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Collector−Emitter Sustaining Voltage V

Collector−Emitter Cutoff Current I

Emitter−Base Cutoff Current I

Collector−Base Cutoff Current I

istics: (TC = +25C unless otherwise specified)

CEO(sus)IC

CEX

I

CEO

EBO

CBO

= 200mA, IB = 0, Note 2 160 − − V

VCE = 160V, V

VCE = 160V, V

VCE = 80V, IB = 0 − − 750 A

VBE = 7V, IC = 0 − − 1.0 mA

VCB = 160V, IE = 0 − − 750 A

= 1.5V − − 0.1 mA

EB(off)

= 1.5V, TC = +150C − − 5.0 mA

EB9off)

Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.

Rev. 2−15

Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

ON Characteristics (Note 2)

DC Current Gain h

FE

VCE = 2V, IC = 8A 15 35 −

VCE = 4V, IC = 16A 8 15 −

Collector−Emitter Saturation Voltage V

CE(sat)IC

= 8A, IB = 0.8A − − 2.0 V

IC = 16A, IB = 2A − − 3.5 V

Base−Emitter Saturation Voltage V

Base−Emitter ON Voltage V

BE(sat)IC

BE(on)

= 16A, IB = 2A − − 3.9 V

VCE = 4V, IC = 16A − − 3.9 V

Dynamic Characteristics

Current−Gain Bandwidth Product f

T

VCE = 20V, IC = 1A, f = 0.5MHz,
Note 3

Output Capacitance C

ob

VCB = 10V, IE = 0, f = 0.1MHz − − 800 pF

Note 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
Note 3. f

= |hFE| S f

T

.189 (4.8)

test

.

.614 (15.6)

1.0 − − MHz

.787

(20.0)

.590

(15.0)

.889

(22.6)

.215 (5.45)

.138
(3.5)

Dia

BCE