Datasheet NTE225 Specification

NTE225

Silicon NPN Transistor

Linear Amplifier and High Speed Switch

Description:

The NTE225 is a silicon NPN transistor in a TO39 type package (with flange) designed for industrial
and commercial equipment. Typical applications include high voltage differential and operational am­plifiers, high voltage inverters, and high voltage, low current switching and series regulators.

Features:

D High Voltage Rating: V

CEO(sus)

D Low Saturation Voltage

Absolute Maximum Ratings:

Collector−Base Voltage, V

CBO

Collector−Emitter Sustaining Voltage, V
Emitter−Base Voltage, V
Collector Current, I
Base Current, I

B

EBO

C

Total Power Dissipation (TC = +25°C), P
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Lead Temperature (During Soldering, 1/32” from seating plane for 10sec Max, T

= 350V Max.

stg

CEO(sus)

D

J

thJC

450V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

350V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

10W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

17.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

L

+255°C. . . . . . .

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector−Emitter Sustaining Voltage V

Collector Cutoff Current I

Emitter Cutoff Current I

DC Current Gain h

Collector−Emitter Saturation Voltage V

Base−Emitter Saturation Voltage V

Small−Signal Current Gain h

Output Capacitance C

Second Breakdown Collector Current I

Note 1. The sustaining voltage (V

CEO(sus)IC

CEO

I

CEV

EBO

FE

CE(sat)IC

BE(sat)IC

fe

ob

S/b

CEO(sus)

= 50mA, IB = 0, Base Open, Note 1 350 − − V

VCE = 300V, IB = 0 − − 20 µA

VCE = 450V, VBE = −1.5V − − 500 µA

VBE = 6V, IC = 0 − − 20 µA

VCE = 10V, IC = 20mA 40 − 160

VCE = 10V, IC = 2mA 30 − −

= 50mA, IB = 4mA − − 0.5 V

= 50mA, IB = 4mA − − 1.3 V

VCE = 10V, IC = 10mA, f = 5MHz 3 − −

VCB = 10V, IE = 0, f = 1MHz − − 10 pF

VCE = 200V, with Base Forward Biased 50 − − mA

) MUST NOT be measured on a curve tracer.

.065 (1.68)

.370 (9.39) Dia Max

.315
(8.0)

.143 (3.65) Min

Emitter

.190 (4.82)

Base

.019 (0.48) Dia

Collector/Case

.500

(12.7)

.630 (16.0)

1.000 (25.4)