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NTE196 (NPN) & NTE197 (PNP)
Silicon Complementary Transistors
Audio Power Output and Medium Power Switching
Description:
The NTE196 (NPN) and NTE197 (PNP) are silicon complementary transistors in a TO220 type package designed for use in general purpose amplifier and switching applications.
Features:
D DC Current Gain Specified to 7 Amps: hFE = 2.3 Min @ IC = 7A
D Collector–Emitter Sustaining Voltage: V
D High Current–Gain Bandwidth Product:
= 4MHz Min @ IC = 500mA (NTE196)
f
T
= 10MHz Min @ I
= 500mA (NTE197)
C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
C
CEO
CB
EB
Continuous 7A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
Total Power Dissipation (T
B
= +25°C), P
C
D
Derate Above 25°C 0.32W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
CEO(sus)
J
thJC
= 70V Min
70V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
40W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3.125°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage V
Collector Cutoff Current I
Emitter Cutoff Current I
(TC = +25°C unless otherwise specified)
CEO(sus)IC
CEO
I
CEX
EBO
= 100mA, IB = 0, Note 1 70 – – V
VCE = 60V, IB = 0 – – 1.0 mA
VCE = 80V, V
VCE = 80V, V
VBE = 5V, IC = 0 – – 1.0 mA
= 1.5V – – 100 µA
EB(off)
= 1.5V, TC = +150°C – – 2.0 mA
EB(off)
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain h
Collector–Emitter Saturation Voltage V
Base–Emitter ON Voltage V
Dynamic Characteristics
Current–Gain Bandwidth Product
NTE196
NTE197
Output Capacitance
Small–Signal Current Gain
FE
CE(sat)IC
BE(on)IC
f
T
C
ob
h
IC = 2A, VCE = 4V 30 – 150
IC = 7A, VCE = 4V 2.3 – –
= 7A, IB = 3A – – 3.5 V
= 7A, VCE = 4V – – 3.0 V
IC = 500mA, VCE = 4V, f
Note 2
VCB = 10V, IE = 0, f = 1MHz – – 250 pF
IC = 500mA, VCE = 4V, f = 50kHz 20 – –
fe
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. f
= |hfe| f
T
test
.420 (10.67)
Max
= 1MHz,
test
.110 (2.79)
4 – – MHz
10 – – MHz
.147 (3.75)
Dia Max
.070 (1.78) Max
Base
.100 (2.54)
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
Emitter
Collector/Tab
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