Datasheet NTE16003 Datasheet (NTE)

NTE16003

Silicon NPN Transistor

RF Power Output, P

= 7W, 175MHz

O

Description:

The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode
design. This feature together with a heavily diffused base matrix located between the individual emit­ters results in high RF current handling capability , high power gain, low base resistance, and low out­put capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multipli­er circuits and is specifically designed for operation in the VHF–UHF region.

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V

EBO

Continuous Collector Current, I
Total Device Dissipation (T

(TA = +25°C unless otherwise specified)

CBO

CEO

(max) 1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

= +25°C), PD 11.6W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

65V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 66.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, T
Storage Temperature Range, T

stg

Thermal Resistance, Junction–to–Case, R

J

thJC

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+15°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Collector–Base Breakdown Voltage V
Emitter–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Collector–Emitter Breakdown Voltage V

Output Capacitance C
Current Gain–Bandwidth Product f

RF Power Output, Class C,

Unneutralized

: (TC = +25°C unless otherwise specified)

CEO
(BR)CBOIC
(BR)EBOIE
(BR)CEOIC
(BR)CEVIC

ob
T

P

out

VCE = 30V, IB = 0 – – 0.1 mA

= 0.1mA, IE = 0 65 – – V
= 0.1mA, IC = 0 4 – – V
= 0 to 200mA, IB = 0, Note 1 40 – – V
= 0 to 200mA, VBE = –1.5V,

Note 1
VCB = 30V, IC = 0, f = 1MHz – – 10 pF
VCE = 28V, IC = 150mA,

f = 100MHz
f = 175MHz, VCE = 28V,

= 1W

P

IN

Note 1. Pulsed through 25mH inductor, Duty Factor = 50%

65 – – V

– 500 – MHz

3 – – W

Collector

Base

.038 (0.98) Dia

.200

(5.08)

Dia

.340 (8.63)

Dia

Emitter

.430

(10.92)

.480

(12.19)

Max

.113 (2.88)

10–32 NF–2A

.078

(1.97)

Max

.320

(8.22)

Max

.455

(11.58)

Max