Datasheet NE6501077 Datasheet (NEC)

PRELIMINARY DATA SHEET

NE6501077

10 W L, S-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

GaAs MES FET

DESCRIPTION

The NE6501077 is power GaAs FET which provides
high gain, high efficiency and high output power in L, S
band.

To reduce thermal resistance, the device has a PHS
(Plated Heat Sink) structure.

FEATURES

• Class A operation

• High output power: 39.5 dBm (typ)

• High gain: 10.5 dB (typ)

• High power added efficiency: 40 % (typ)

• Hermetically sealed ceramic package

2.26 ±0.4

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

Drain to Source Voltage VDSX 15 V

Gate to Drain Voltage VGDX –18 V

Gate to Source Voltage V

Drain Current ID 9.0 A

Gate Current IG 50 mA

Total Power Dissipation P

Channel Temperature Tch 175 ˚C

Storage Temperature Tstg –65 to +175 ˚C

Temperature Cycling T∞ –40 to +120 ˚C

C = 25 ˚C

* T

GSX –12 V

T(*) 50 W

PACKAGE DIMENSIONS (UNIT: mm)

17.5 ±0.5

14.3

1.0 ±0.1

DRAIN

8.9 ±0.4

GATE

6.35 ±0.4

4.0 MIN BOTH
LEADS

1.0

SOURCE

2.5

R1.25, 2 PLACES

+0.06

0.1

–0.02

0.2 MAX.

3.8 MAX.

Caution Please handle this device at a static-free workstation, because this is an electrostatic sensitive

device.

Document No. P10978EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan

©

1996

MAXIMUM OPERATION RANGE

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT
Drain to Source Voltage VDS –1010V
Channel Temperature Tch – – 130 ˚C
Input Power Gcomp – – 3 dBcomp
Gate Resistance Rg – – 100 Ω

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS
Saturated Drain Current Idss 2.0 4.5 7.0 A Vds = 1.5 V, Vgs = 0 V
Pinch-off Voltage VP –3.5 –2.0 –0.5 V Vds = 2.5 V, Ids = 30 mA
Transconductance gm – 2600 – mS Vds = 2.5 V, Ids = 2 A
Thermal Resistance Rth – 3.5 4.0 ˚C/W Channel to Case

PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)

NE6501077

CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Output Power Pout 39.0 39.5 – dBm f = 2.3 GHz, Vds = 10 V
Gate to Source Current Igs –10 – 10 mA
Power Added Efficiency
Linear Gain GL 9.5 10.5 – dB Pin ≤ 23 dBm(*)

η

add – 40 – %

Ids ≤ 1.0 A, Pin = 31.0 dBm
Rg = 100 Ω

* The other are the same as the above conditions.

2

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

NE6501077

OUTPUT POWER vs. INPUT POWER

42

V

DS

= 10 V,

I

Dset

= 1.0 A

39

36

33

- Output Power - dBm

out

P

30

27

20

23 26 29 32 35

P

in

- Input Power - dBm

Id (mA)

4 000

P

out

3 200

2 400

I

d

1 600

800

0

3

S-PARAMETER

VDS = 9.0 V, IDS = 1 000 mA, VGS = –1.514 V, IG = 0.0 mA

NE6501077

FREQUENCY

GHz MAG ANG MAG ANG MAG ANG MAG ANG

0.050 0.990 –77.1 18.297 140.3 0.005 16.2 0.822 –177.8

0.100 0.972 –115.8 12.578 120.5 0.007 16.7 0.847 –178.1

0.200 0.971 –146.6 7.135 103.3 0.007 28.1 0.863 179.5

0.300 0.963 –159.1 4.862 95.7 0.008 25.8 0.863 178.1

0.400 0.972 –166.4 3.726 90.3 0.008 26.1 0.869 176.3

0.500 0.969 –170.7 2.996 87.0 0.009 26.1 0.868 175.5

0.600 0.969 –174.6 2.516 83.4 0.009 27.9 0.867 174.0

0.700 0.975 –177.1 2.183 80.9 0.010 31.9 0.872 173.3

0.800 0.972 –179.4 1.939 78.3 0.010 35.2 0.881 172.9

0.900 0.974 178.5 1.722 75.9 0.010 33.7 0.865 171.3

1.000 0.969 176.1 1.556 72.8 0.011 37.4 0.862 169.8

1.010 0.970 176.1 1.545 72.6 0.011 36.8 0.863 169.9

1.100 0.978 174.5 1.436 70.4 0.011 33.8 0.867 168.9

1.200 0.972 172.6 1.328 68.0 0.012 38.2 0.863 167.8

1.300 0.978 170.8 1.243 65.5 0.013 40.7 0.867 166.9

1.400 0.972 169.2 1.160 63.1 0.013 40.4 0.861 165.9

1.500 0.977 167.4 1.106 60.8 0.015 40.4 0.871 165.0

1.600 0.974 166.0 1.044 58.2 0.015 40.6 0.861 163.4

1.700 0.968 164.6 0.992 56.1 0.016 40.4 0.857 162.7

1.800 0.966 162.6 0.951 53.2 0.016 39.3 0.857 161.2

1.900 0.972 161.3 0.921 50.8 0.017 41.4 0.867 159.9

2.000 0.969 159.7 0.882 48.4 0.018 42.8 0.857 158.5

2.100 0.973 158.5 0.858 46.4 0.020 42.1 0.861 157.6

2.200 0.961 156.8 0.825 43.8 0.021 40.9 0.849 156.1

2.300 0.966 154.7 0.808 40.7 0.022 41.1 0.854 154.2

2.400 0.962 153.3 0.784 38.5 0.023 38.5 0.852 153.0

2.500 0.964 151.6 0.768 35.9 0.025 37.2 0.857 151.4

2.600 0.959 150.1 0.751 33.5 0.026 35.9 0.852 149.9

2.700 0.963 148.2 0.738 30.9 0.027 33.7 0.853 148.5

2.800 0.958 146.5 0.722 28.3 0.029 34.1 0.851 146.7

2.900 0.961 144.9 0.714 25.8 0.030 33.2 0.851 145.6

3.000 0.953 143.2 0.699 22.9 0.031 29.9 0.842 143.9

3.100 0.955 141.2 0.696 19.9 0.034 28.9 0.844 142.1

3.200 0.955 139.5 0.689 17.4 0.035 26.4 0.839 140.7

3.300 0.956 137.9 0.683 15.0 0.037 24.5 0.839 139.5

3.400 0.952 136.3 0.675 12.5 0.038 23.1 0.833 138.1

3.500 0.954 134.7 0.670 9.8 0.040 21.5 0.831 136.9

3.600 0.953 132.6 0.667 6.6 0.042 20.0 0.827 135.3

3.700 0.959 131.0 0.668 4.0 0.045 18.1 0.828 134.2

3.800 0.955 129.0 0.667 0.9 0.047 15.5 0.820 132.5

3.900 0.958 127.2 0.671 –1.6 0.049 12.9 0.813 131.1

4.000 0.954 125.2 0.671 –4.2 0.051 11.6 0.805 129.8

S11 S21 S12 S22

4

VDS = 10.0 V, IDS = 1 000 mA, VGS = –1.552 V, IG = 0.0 mA

NE6501077

FREQUENCY

GHz MAG ANG MAG ANG MAG ANG MAG ANG

0.050 0.984 –76.4 18.696 140.1 0.006 23.7 0.812 –177.7

0.100 0.974 –115.7 12.798 120.5 0.006 28.6 0.840 –178.1

0.200 0.970 –146.6 7.261 103.2 0.007 22.0 0.857 179.6

0.300 0.962 –159.0 4.949 95.6 0.007 25.6 0.855 178.0

0.400 0.971 –166.4 3.794 90.1 0.008 25.9 0.862 176.4

0.500 0.969 –170.7 3.049 86.8 0.008 26.1 0.862 175.5

0.600 0.969 –174.6 2.561 83.2 0.009 27.6 0.861 174.1

0.700 0.974 –177.1 2.220 80.6 0.009 32.5 0.865 173.5

0.800 0.972 –179.5 1.969 77.9 0.010 34.1 0.873 172.9

0.900 0.973 178.4 1.751 75.4 0.010 34.6 0.859 171.3

1.000 0.968 176.0 1.582 72.4 0.010 35.5 0.856 169.9

1.100 0.977 174.5 1.460 70.0 0.011 34.6 0.860 169.1

1.200 0.971 172.5 1.349 67.5 0.012 37.1 0.856 167.9

1.300 0.977 170.7 1.264 64.9 0.013 38.0 0.860 167.0

1.400 0.971 169.1 1.179 62.5 0.013 38.8 0.855 166.0

1.500 0.976 167.4 1.124 60.1 0.015 39.7 0.865 165.1

1.600 0.973 166.0 1.060 57.5 0.015 39.5 0.854 163.5

1.700 0.967 164.5 1.007 55.4 0.015 39.8 0.850 162.8

1.800 0.965 162.5 0.964 52.5 0.016 41.6 0.851 161.4

1.900 0.971 161.2 0.934 50.0 0.017 42.5 0.860 160.0

2.000 0.968 159.7 0.894 47.6 0.018 41.5 0.850 158.7

2.100 0.972 158.5 0.870 45.6 0.020 41.5 0.854 157.8

2.200 0.960 156.8 0.835 43.0 0.021 41.0 0.843 156.3

2.300 0.965 154.7 0.818 39.8 0.021 39.9 0.847 154.4

2.400 0.962 153.2 0.794 37.6 0.023 38.7 0.846 153.3

2.500 0.962 151.5 0.778 35.0 0.024 37.5 0.850 151.7

2.600 0.958 149.9 0.760 32.5 0.026 35.8 0.847 150.3

2.700 0.962 148.1 0.747 30.0 0.027 33.4 0.846 148.8

2.800 0.957 146.4 0.729 27.2 0.028 33.4 0.844 147.0

2.900 0.961 144.8 0.721 24.7 0.030 32.1 0.845 145.9

3.000 0.952 143.1 0.705 21.8 0.031 29.5 0.836 144.3

3.100 0.954 141.1 0.702 18.9 0.033 28.5 0.838 142.4

3.200 0.954 139.4 0.694 16.3 0.035 25.7 0.834 141.1

3.300 0.955 137.8 0.688 13.9 0.036 24.7 0.834 139.9

3.400 0.951 136.2 0.680 11.4 0.038 24.0 0.828 138.5

3.500 0.953 134.7 0.674 8.7 0.039 21.3 0.825 137.3

3.600 0.952 132.5 0.671 5.4 0.041 19.8 0.822 135.7

3.700 0.958 130.9 0.672 2.8 0.045 17.4 0.823 134.6

3.800 0.954 128.9 0.671 –0.3 0.047 14.3 0.814 133.0

3.900 0.957 127.1 0.674 –2.8 0.048 12.5 0.809 131.6

4.000 0.954 125.2 0.673 –5.5 0.051 12.0 0.800 130.4

S11 S21 S12 S22

5

NE6501077

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)

Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11

2