How it Works
Datasheet
Loading...
NE592D8
Datasheet (Philips)
8 pgs144.57 Kb0

Datasheet NE592D8, NE592N8, NE592N14, NE592D14 Datasheet (Philips)

Download
Page 1
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
250
April 15, 1992 853-0911 06456
DESCRIPTION
The NE592 is a monolithic, two-stage, differential output, wideband video amplifier. It offers fixed gains of 100 and 400 without external components and adjustable gains from 400 to 0 with one external resistor. The input stage has been designed so that with the addition of a few external reactive elements between the gain select terminals, the circuit can function as a high-pass, low-pass, or band-pass filter. This feature makes the circuit ideal for use as a video or pulse amplifier in communications, magnetic memories, display, video recorder systems, and floppy disk head amplifiers. Now available in an 8-pin version with fixed gain of 400 without external components and adjustable gain from 400 to 0 with one external resistor.
FEATURES
•120MHz unity gain bandwidth
•Adjustable gains from 0 to 400
•Adjustable pass band
•No frequency compensation required
•Wave shaping with minimal external components
•MIL-STD processing available
PIN CONFIGURATIONS
1 2 3 4 5
6
7
8
1
2
3
4
5
6
7 8
14
13
12
11
10
9
INPUT 1
NC
G
2A
GAIN SELECT
G
1A
GAIN SELECT
V+
NC
OUTPUT 1
INPUT 2
NC
G
2B
GAIN SELECT
G
1B
GAIN SELECT
V-
NC
OUTPUT 2
INPUT 2
V-
OUTPUT 2
INPUT 1
V+ OUTPUT 1
G
1A
GAIN SELECTG1B GAIN SELECT
D, N Packages
TOP VIEW
D, N Packages
TOP VIEW
APPLICATIONS
•Floppy disk head amplifier
•Video amplifier
•Pulse amplifier in communications
•Magnetic memory
•Video recorder systems
BLOCK DIAGRAM
+V
Q6
OUTPUT 1
OUTPUT 2
R1 R2 R8 R10 R9
Q5
Q4 Q3
R11
R12
Q11
Q10
R13 R14R16R15R7BR7A
Q7B Q8 Q9
Q7A
G2A
G1A
INPUT 1
INPUT 2
R3 R5
G1B
G2B
Q1 Q2
-V
Page 2
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992
251
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
14-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE592N14 0405B 14-Pin Small Outline (SO) package 0 to +70°C NE592D14 0175D 8-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE592N8 0404B 8-Pin Small Outline (SO) package 0 to +70°C NE592D8 0174C
NOTES:
N8, N14, D8 and D14 package parts also available in “High” gain version by adding “H” before package designation, i.e., NE592HDB
ABSOLUTE MAXIMUM RATINGS
TA=+25°C, unless otherwise specified.
SYMBOL
PARAMETER RATING UNIT
V
CC
Supply voltage ±8 V
V
IN
Differential input voltage ±5 V
V
CM
Common-mode input voltage ±6 V
I
OUT
Output current 10 mA
T
A
Operating ambient temperature range 0 to +70 °C
T
STG
Storage temperature range -65 to +150 °C
P
D MAX
Maximum power dissipation, TA=25°C (still air)
1
D-14 package 0.98 W D-8 package 0.79 W N-14 package 1.44 W N-8 package 1.17 W
NOTES:
1. Derate above 25°C at the following rates: D-14 package at 7.8mW/°C D-8 package at 6.3mW/°C N-14 package at 11.5mW/°C N-8 package at 9.3mW/°C
Page 3
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992
252
DC ELECTRICAL CHARACTERISTICS
TA=+25°C VSS=±6V, VCM=0, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to both standard and high gain parts unless noted differently.
NE592
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max
UNIT
A
VOL
Differential voltage gain, standard part
Gain 1
1
RL=2kΩ, V
OUT
=3V
P-P
250 400 600 V/V
Gain 2
2, 4
80 100 120 V/V
R
IN
Input resistance
Gain 1
1
4.0 kΩ
Gain 2
2, 4
10 30 kΩ
C
IN
Input capacitance
2
Gain 2
4
2.0 pF
I
OS
Input offset current 0.4 5.0 µA
I
BIAS
Input bias current 9.0 30 µA
V
NOISE
Input noise voltage BW 1kHz to 10MHz 12 µV
RMS
V
IN
Input voltage range ±1.0 V
CMRR Common-mode rejection ratio
Gain 2
4
VCM±1V, f<100kHz 60 86 dB
Gain 2
4
VCM±1V, f=5MHz 60 dB
PSRR Supply voltage rejection ratio
Gain 2
4
∆VS=±0.5V 50 70 dB
V
OS
Output offset voltage
Gain 1 RL=∞ 1.5 V Gain 2
4
RL=∞ 1.5 V
Gain 3
3
RL=∞ 0.35 0.75 V
V
CM
Output common-mode voltage RL=∞ 2.4 2.9 3.4 V
V
OUT
Output voltage swing RL=2kΩ 3.0 4.0 V differential
R
OUT
Output resistance 20 Ω
I
CC
Power supply current RL=∞ 18 24 mA
NOTES:
1. Gain select Pins G1A and G1B connected together.
2. Gain select Pins G2A and G2B connected together.
3. All gain select pins open.
4. Applies to 14-pin version only.
Page 4
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992
253
DC ELECTRICAL CHARACTERISTICS
DC Electrical CharacteristicsVSS=±6V, VCM=0, 0°C ≤TA≤70°C, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to both standard and high gain parts unless noted differently.
NE592
SYMBOL
PARAMETER
TEST CONDITIONS
Min Typ Max
UNIT
A
VOL
Differential voltage gain, standard part
Gain 1
1
RL=2kΩ, V
OUT
=3V
P-P
250 600 V/V
Gain 2
2, 4
80 120 V/V
R
IN
Input resistance
Gain 2
2, 4
8.0 kΩ
I
OS
Input offset current 6.0 µA
I
BIAS
Input bias current 40 µA
V
IN
Input voltage range ±1.0 V
CMRR Common-mode rejection ratio
Gain 2
4
VCM±1V, f<100kHz 50 dB
PSRR Supply voltage rejection ratio
Gain 2
4
∆VS=±0.5V 50 dB
V
OS
Output offset voltage
Gain 1 Gain 2
4
Gain 3
3
RL=∞
1.5
1.5
1.0
V
V
OUT
Output voltage swing differential RL=2kΩ 2.8 V
I
CC
Power supply current RL=∞ 27 mA
NOTES:
1. Gain select Pins G
1A
and G1B connected together.
2. Gain select Pins G2A and G2B connected together.
3. All gain select pins open.
4. Applies to 14-pin versions only.
AC ELECTRICAL CHARACTERISTICS
TA=+25°C VSS=±6V, VCM=0, unless otherwise specified. Recommended operating supply voltages VS=±6.0V. All specifications apply to both standard and high gain parts unless noted differently.
SYMBOL
PARAMETER TEST CONDITIONS NE/SA592 UNIT
Min Typ Max
BW
Bandwidth
Gain 1
1
Gain 2
2, 4
40 90
MHz MHz
t
R
Rise time
Gain 1
1
Gain 2
2, 4
V
OUT
=1V
P-P
10.5
4.5
12 ns
ns
t
PD
Propagation delay
Gain 1
1
Gain 2
2, 4
V
OUT
=1V
P-P
7.5
6.0
10 ns
ns
NOTES:
1. Gain select Pins G1A and G1B connected together.
2. Gain select Pins G2A and G2B connected together.
3. All gain select pins open.
4. Applies to 14-pin versions only.
Page 5
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992
254
TYPICAL PERFORMANCE CHARACTERISTICS
TA = 70oC
T
amb
= 0oC
COMMON-MODE REJECTION RATIO – dB
OUTPUT VOLTAGE – V
OUTPUT VOLTAGE – V
SINGLE ENDED VOLTAGE GAIN – dB
RELATIVE VOLTAGE GAIN
RELATIVE VOLTAGE GAIN
OUTPUT VOLTAGE – V
OUTPUT VOLTAGE SWING – Vpp
Common-Mode Rejection Ratio
as a Function of Frequency
Output Voltage Swing as a Function of Frequency
Pulse Response
Supply Current as a
Function of Temperature
Pulse Response as a
Function of Supply Voltage
Pulse Response as a
Function of Temperature
Voltage Gain as a
Function of Temperature
Gain vs. Frequency as a
Function of Temperature
Voltage Gain as a
Function of Supply Voltage
100
90 80 70 60 50 40 30 20 10
0
10k 100k 1M 10M 100M
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
1 5 10 50 100 500 1000
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 0
-0.2
-0.4
-15 -10 -5 0 5 10 15 20 25 30 35
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 0
-0.2
-0.4
-15 -10 -5 0 5 10 15 20 25 30 35
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2 0
-0.2
-0.4
-15 -10 -5 0 5 10 15 20 25 30 35
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
0.92
0.90 0 10 20 30 40 50 60 70
60
50
40
30
20
10
0
-10 1 5 10 50 100 500 1000
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4 3 4 5 6 7 8
FREQUENCY – Hz FREQUENCY – MHz TIME – ns
TIME – ns TIME – ns
FREQUENCY – MHz SUPPLY VOLTAGE – +
VTEMPERATURE – oC
GAIN 2 V
S
= +6V
T
A
= 25oC
VS = +6V T
A
= 25oC
R
L
= 1kΩ
VS = +6V T
A
= 25oC
R
L
= 1k
GAIN 2 T
A
= 25oC
R
L
= 1kΩ
GAIN 2 V
S
= +
6V
RL = 1kΩ
VS = +
6V
GAIN 2 V
S
= +
6V
RL = 1kΩ
T
amb
= 25oC
GAIN 2
GAIN 1
VS = +8V
VS = +3V
VS = +6V
TA = 25oC
GAIN 2
GAIN 1
TA = 125oC
TA = –55oC
TA = 25oC
GAIN 2
GAIN 1
SUPPLY CURRENT – mA
28
24
20
16
12
8
3 4 5 6 7 8
SUPPLY VOLTAGE – +
V
TA = 25oC
Page 6
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992
255
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
SINGLE ENDED VOLTAGE GAIN – dB
DIFFERENTIAL VOLTAGE GAIN – V/V
SUPPLY CURRENT – mA
OUTPUT VOLTAGE SWING – V OR
OUTPUT SINK CURRENT – mA
OUTPUT VOLTAGE SWING – Vpp
INPUT RESISTANCE – K
INPUT NOISE VOLTAGE – Vrms
Gain vs. Frequency as a
Function of Supply Voltage
Voltage Gain
Adjust Circuit
Voltage Gain as a
Function of RADJ (Figure 3)
Supply Current as a
Function of Temperature
Differential Overdrive
Recovery Time
Output Voltage and Current
Swing as a Function of
Supply Voltage
Output Voltage Swing as a
Function of Load Resistance
Input Resistance as a
Function of Temperature
Input Noise Voltage
as a Function of
Source Resistance
60
50
40
30
20
10
0
-10 1 5 10 50 100 500 1000
1000
100
10
1
.1
.01
1 10 100 1K 10K 100K 1M
21
20
19
18
17
16
15
14
-60
-20 20 60 100 140
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
3.0 4.0 5.0 6.0 7.0 8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
10 50 100 500 1K 5K 10K
70
60
50
40
30
20
10
0
-60 -20 0 20 60 100 140
100
90 80 70 60 50 40
30 20 10
0
1 10 100 1K 10K
FREQUENCY – MHz
R
ADJ
– Ω
TEMPERATURE – oC SUPPLY VOLTAGE – +V
LOAD RESISTANCE – Ω TEMPERATURE –
o
C SOURCE RESISTANCE – Ω
VS = +8V
VS = +3V
VS = +6V
GAIN 2 T
A
= 25oC
R
L
= 1kΩ
VS = +6V f = 100kHz T
A
= 25oC
FIGURE 3
VS = +6V
TA = 25oC
VS = +6V T
A
= 25oC
GAIN 2 V
S
= +6V
GAIN 2 V
S
= +6V
T
A
= 25oC
BW = 10MHz
VOLTAGE
CURRENT
14
1
12
11
8
7
4
3
0.2µF
0.2µF
592
51 51 R
ADJ
1k1k
TA = 25oCVS = +6V
OVERDRIVE RECOVERY TIME – ns
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180 200
DIFFERENTIAL INPUT VOLTAGE – mV
VS = +6V T
A
= 25oC
GAIN 2
Ω
µ
Page 7
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992
256
PHASE SHIFT – DEGREES
PHASE SHIFT – DEGREES
VOLTAGE GAIN – dB
VOLTAGE GAIN – dB
Phase Shift as a
Function of Frequency
Phase Shift as a
Function of Frequency
Voltage Gain as a
Function of Frequency
Voltage Gain as a
Function of Frequency
0
-5
-10
-15
-20
-25 0 1 2 3 4 5 6 7 8 9 10
0
-50
-100
-150
-200
-250
-300
-350 1 10 100 1000
60
50
40
30
20
10
0
1 10 100 1000
.01 .1 1 10 100 1000
40 30 20 10
0
-10
-20
-30
-40
-50
FREQUENCY – MHz FREQUENCY – MHz
FREQUENCY – MHzFREQUENCY – MHz
VS = +6V T
A
= 25oC
GAIN 2 V
S
= +6V
T
A
= 25oC
VS = +6V T
amb
= 25oC
R
L
= 1KΩ
VS = +6V T
A
= 25oC
GAIN 3
GAIN 1
GAIN 2
GAIN 1
GAIN 2
TEST CIRCUITS T
A
= 25°C, unless otherwise specified.
V
IN
V
OUT
R
L
592
51Ω 51Ω
51Ω 51Ω
e
in
e
outeout
1k 1k
0.2µF
0.2µF
592
Page 8
Philips Semiconductors RF Communications Products Product specification
NE592Video amplifier
April 15, 1992
257
TYPICAL APPLICATIONS
NOTE:
Basic Configuration
Disc/Tape Phase-Modulated Readback Systems
Differentiation with High
Common-Mode Noise Rejection
NOTE:
For frequency F
1
<< 1/2 π (32) C
VO 1.4 x 104C
dVi
dT
Z
V
1
2r
e
+6
V
0
7
5
4
1
14
11
10
-6
592
READ HEAD DIFFERENTIATOR/AMPLIFIER ZERO CROSSING DETECTOR
+5
9 4 8
529
7
5
Q
Q
6
3
2
1
10
+6
14
11
10
8 7
5
4
1
-6
AMPLITUDE: 1-10 mV p-p FREQUENCY: 1-4 MHz
592
0.2µF
+6
0.2µF
2KΩ
2KΩ
V
0
V
1
C
14
1
11
4
10
5
7
8
-6
592
V0(s) v1(s)
1.4 10
4
Z(S) 2r
e
1.4 10
4
Z(S) 32
FILTER NETWORKS
NOTES:
In the networks above, the R value used is assumed to include 2r
e
, or approximately 32Ω. S = jω ω = 2πf
1.4 10
4
L
1
s RL
1.4 10
4
R
s
s 1RC
1.4 10
4
L
s
s2 RLs  1LC
1.4 10
4
R
s2 1LC
s2 1LC  sRC
Z NETWORK
FILTER
TYPE
V
0
(s) TRANSFER
V
1
(s) FUNCTION
LOW PASS
HIGH PASS
BAND PASS
BAND REJECT
R
L
R C
R L C
R
L
C
Loading...
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use