Datasheet NE572N, NE572D, SA572F, SA572N Datasheet (Philips)

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INTEGRATED CIRCUITS
SA572
Programmable analog compandor
Product specification 1998 Nov 03 IC17 Data Handbook
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Philips Semiconductors Product specification
T
A
DESCRIPTION
The SA572 is a dual-channel, high-performance gain control circuit in which either channel may be used for dynamic range compression or expansion. Each channel has a full-wave rectifier to detect the average value of input signal, a linearized, temperature-compensated variable gain cell (G) and a dynamic time constant buffer. The buf fer permits independent control of dynamic attack and recovery time with minimum external components and improved low frequency gain control ripple distortion over previous compandors.
The SA572 is intended for noise reduction in high-performance audio systems. It can also be used in a wide range of communication systems and video recording applications.
FEA TURES
Independent control of attack and recovery time
Improved low frequency gain control ripple
Complementary gain compression and expansion with
external op amp
Wide dynamic range—greater than 110dB
T emperature-compensated gain control
Low distortion gain cell
Low noise—6µV typical
Wide supply voltage range—6V-22V
System level adjustable with external components
PIN CONFIGURATION
D1, N, Packages
TRACK TRIM A
RECOV. CAP A
RECT. IN A
ATTACK CAP A
G OUT A
THD TRIM A
NOTE:
1. D package released in large SO (SOL) package only.
1 2 3 4 5 6
G IN A
7 8
GND
Figure 1. Pin Configuration
APPLICATIONS
Dynamic noise reduction system
Voltage control amplifier
Stereo expandor
Automatic level control
High-level limiter
Low-level noise gate
State variable filter
16
V
CC
15
TRACK TRIM B
14
RECOV. CAP B
13
RECT. IN B
12
ATTACK CAP B G OUT B
11 10
THD TRIM B G IN B
9
SR00694
ORDERING INFORMATION
DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #
16-Pin Plastic Small Outline (SOL) –40 to +85°C SA572D SOT162-1 16-Pin Plastic Dual In-Line Package (DIP) –40 to +85°C SA572N SOT38-4
ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER RATING UNIT
V
CC
P
D
Supply voltage 22 V Operating temperature range
SA572 –40 to +85 °C
Power dissipation 500 mW
DC
1998 Nov 03 853-0813 20294
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Philips Semiconductors Product specification
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
SA572Programmable analog compandor
BLOCK DIAGRAM
(7,9)
(6,10)
(3,13)
(16)
R1
6.8k G
500
GAIN CELL
– +
270
RECTIFIER
P.S.
(8) (4,12) (2,14)
10k
– +
BUFFER 10k
(5,11)
(1,15)
SR00695
Figure 2. Block Diagram
DC ELECTRICAL CHARACTERISTICS
Standard test conditions (unless otherwise noted) VCC=15V, TA=25°C; Expandor mode (see Test Circuit). Input signals at unity gain level (0dB) = 100mV
V
CC
I
CC
V
R
Supply voltage 6 22 V Supply current No signal 6.3 mA Internal voltage reference 2.3 2.5 2.7 V
at 1kHz; V
RMS
1
THD Total harmonic distortion (untrimmed) 1kHz CA=1.0µF 0.2 1.0 % THD Total harmonic distortion (trimmed) 1kHz CR=10µF 0.05 % THD Total harmonic distortion (trimmed) 100Hz 0.25 %
No signal output noise Input to V1 and V2 grounded (20–20kHz) 6 25 µV DC level shift (untrimmed) Input change from no signal to 100mV Unity gain level –1.5 0 +1.5 dB Large-signal distortion V1=V2=400mV 0.7 3 %
Tracking error (measured relative to value at unity gain)= [VO–VO (unity gain)]dB –V2dB
Channel crosstalk
PSRR Power supply rejection ratio 120Hz 70 dB
= V2; R
= 3.3kΩ; R
2
= 17.3kΩ.
3
SA572
Min Typ Max
RMS
±20 ±50 mV
Rectifier input
V2=+6dB V1=0dB ±0.2 dB
V2=–30dB V1=0dB ±0.5 –2.5, +1.6 dB
200mV
measured output on channel B
into channel A,
RMS
60 dB
DC
DC
1998 Nov 03
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Philips Semiconductors Product specification
SA572Programmable analog compandor
TEST CIRCUIT
2.2µF
V
1
5
= 10µF
2.2µF
1%
R
2
3.3k (3,13)
V
2
(7,9)
6.8k
(2,14)
(4,12)
G
BUFFER
RECTIFIER
(5,11)
(6,10)
(8)
(1,15)
(16)
Figure 3. Test Circuit
AUDIO SIGNAL PROCESSING IC COMBINES VCA AND FAST ATTACK/SLOW RECOVERY LEVEL SENSOR
In high-performance audio gain control applications, it is desirable to independently control the attack and recovery time of the gain control signal. This is true, for example, in compandor applications for noise reduction. In high end systems the input signal is usually split into two or more frequency bands to optimize the dynamic behavior for each band. This reduces low frequency distortion due to control signal ripple, phase distortion, high frequency channel overload and noise modulation. Because of the expense in hardware, multiple band signal processing up to now was limited to professional audio applications.
With the introduction of the Signetics SA572 this high-performance noise reduction concept becomes feasible for consumer hi fi applications. The SA572 is a dual channel gain control IC. Each channel has a linearized, temperature-compensated gain cell and an improved level sensor. In conjunction with an external low noise op
+
22µF
22µF
100
V
+15V
–15V
0
SR00696
82k
1k +
2.2k
2.2µF
1%
R
17.3k
270pF
1µF
3
NE5234
+
.1µF
+
amp for current-to-voltage conversion, the VCA features low distortion, low noise and wide dynamic range.
The novel level sensor which provides gain control current for the VCA gives lower gain control ripple and independent control of fast attack, slow recovery dynamic response. An attack capacitor C with an internal 10k resistor RA defines the attack time tA. The recovery time t
and an internal 10k resistor RR. Typical attack time of 4ms for
C
R
of a tone burst is defined by a recovery capacitor
R
the high-frequency spectrum and 40ms for the low frequency band can be obtained with 0.1µF and 1.0µF attack capacitors, respectively. Recovery time of 200ms can be obtained with a 4.7µF recovery capacitor for a 100Hz signal, the third harmonic distortion is improved by more than 10dB over the simple RC ripple filter with a single 1.0µF attack and recovery capacitor, while the attack time remains the same.
The SA572 is assembled in a standard 16-pin dual in-line plastic package and in oversized SOL package. It operates over a wide supply range from 6V to 22V . Supply current is less than 6mA. The SA572 is designed for applications from –40°C to +85°C.
A
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Philips Semiconductors Product specification
SA572Programmable analog compandor
SA572 BASIC APPLICATIONS Description
The SA572 consists of two linearized, temperature-compensated gain cells (G), each with a full-wave rectifier and a buffer amplifier as shown in the block diagram. The two channels share a 2.5V common bias reference derived from the power supply but otherwise operate independently. Because of inherent low distortion, low noise and the capability to linearize large signals, a wide dynamic range can be obtained. The buffer amplifiers are provided to permit control of attack time and recovery time independent of each other. Partitioned as shown in the block diagram, the IC allows flexibility in the design of system levels that optimize DC shift, ripple distortion, tracking accuracy and noise floor for a wide range of application requirements.
Gain Cell
Figure 4 shows the circuit configuration of the gain cell. Bases of the differential pairs Q inputs of OPA A of Q1-Q2 and the VBE of Q3-Q4 equal. The following relationship can be derived from the transistor model equation in the forward active region.
V
(VBE = VT IIN IC/IS)
VTI
where I
BE
n
Q3Q4
1
I
G
2
I
S
IN
R1 = 6.8k I1 = 140µA I
= 280µA
2
and Q3-Q4 are both tied to the output and
1-Q2
. The negative feedback through Q1 holds the V
1
BE
Q1Q2
1
I
O
2
VTI
V
IN
R
1
n
1
1
I
I
G
O
2
2
I
S
BE
I1 I
IN
V
I
n
T
where I
is the differential output current of the gain cell and IG is the gain
I
O
control current of the gain cell. If all transistors Q1 through Q4 are of the same size, equation (2)
can be simplified to: I
O
The first term of Equation 3 shows the multiplier relationship of a linearized two quadrant transconductance amplifier. The second term is the gain control feedthrough due to the mismatch of devices. In the design, this has been minimized by large matched devices and careful layout. Offset voltage is caused by the device mismatch and it leads to even harmonic distortion. The offset voltage can be trimmed out by feeding a current source within ±25µA into the THD trim pin.
The residual distortion is third harmonic distortion and is caused by gain control ripple. In a compandor system, available control of fast attack and slow recovery improve ripple distortion significantly. At the unity gain level of 100mV, the gain cell gives THD (total harmonic distortion) of 0.17% typ. Output noise with no input signals is only 6µV in the audio spectrum (10Hz-20kHz). The output current I must feed the virtual ground input of an operational amplifier with a resistor from output to inverting input. The non-inverting input of the operational amplifier has to be biased at V
is DC coupled.
I
O
I
S
IN
R1 = 6.8k I
= 140µA
1
I
= 280µA
2
2
IIN I
I
2
V
IN
R
VTI
1
G
n
1
I
I2 I1 I
I
I2 2I
2
IN
S
1
(2)
I
G
REF
(3)
O
if the output current
1998 Nov 03
V+
1
1
I
I
G
O
2
2
I
O
Q
Q
4
I
G
3
THD
TRIM
Figure 4. Basic Gain Cell Schematic
A1
+
V
REF
5
I
1
140µA
Q
1
I
2
2
SR00697
R1
6.8k
Q
280µA
V
IN
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Philips Semiconductors Product specification
SA572Programmable analog compandor
Rectifier
The rectifier is a full-wave design as shown in Figure 5. The input voltage is converted to current through the input resistor R turns on either Q
or Q6 depending on the signal polarity. Deadband
5
of the voltage to current converter is reduced by the loop gain of the gain block A from input bias current of gain block A
. If AC coupling is used, the rectifier error comes only
2
. The input bias current is
2
typically about 70nA. Frequency response of the gain block A causes second-order error at high frequency. The collector current of Q
is mirrored and summed at the collector of Q5 to form the full
6
wave rectified output current I
V
V
IN
V
R
(AVG)
IN
R
REF
2
2
I
R
If V
is AC-coupled, then the equation will be reduced to:
IN
I
RAC
. The rectifier transfer function is
R
(4)
The internal bias scheme limits the maximum output current IR to be around 300µA. Within a ±1dB error band the input range of the rectifier is about 52dB.
V+
V
V
REF
IN
+
A2
R2
Q5
Q6
and
2
also
2
VIN V
I
R
D7
REF
R
2
Buffer Amplifier
In audio systems, it is desirable to have fast attack time and slow recovery time for a tone burst input. The fast attack time reduces transient channel overload but also causes low-frequency ripple distortion. The low-frequency ripple distortion can be improved with the slow recovery time. If different attack times are implemented in corresponding frequency spectrums in a split band audio system, high quality performance can be achieved. The buffer amplifier is designed to make this feature available with minimum external components. Referring to Figure 6, the rectifier output current is mirrored into the input and output of the unipolar buffer amplifier A through Q8, Q9 and Q10. Diodes D11 and D12 improve tracking accuracy and provide common-mode bias for A positive-going input signal, the buffer amplifier acts like a voltage-follower . Therefore, the output impedance of A contribution of capacitor CR to attack time insignificant. Neglecting diode impedance, the gain Ga(t) for G can be expressed as follows:
t
Ga(t)  (Ga
Ga
=Initial Gain
INT
Ga
=Final Gain
FNL
τ
CA=10k CA
A=RA
INT
Ga
FNL
t
e
Ga
A
where τA is the attack time constant and RA is a 10k internal resistor. Diode D
opens the feedback loop of A3 for a
15
negative-going signal if the value of capacitor CR is larger than capacitor CA. The recovery time depends only on CR • R diode impedance is assumed negligible, the dynamic gain G G is expressed as follows.
t
(t)  (G
G
R
GR(t)=(G
G
RINT
R INT–GR FNL
RFNL
) e +G
t
e
R
R FNL
G
RFNL
τR=RR CR=10k CR
where τR is the recovery time constant and R resistor. The gain control current is mirrored to the gain cell through Q
. The low level gain errors due to input bias current of A2 and A
14
can be trimmed through the tracking trim pin into A3 with a current source of ±3µA.
. For a
3
FNL
is a 10k internal
R
makes the
3
. If the
R
(t) for
R
3
3
1998 Nov 03
SR00698
Figure 5. Simplified Rectifier Schematic
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Philips Semiconductors Product specification
SA572Programmable analog compandor
V+
Q17
Q8 Q9
V
I
R
IN
R
10k
Q10
I
= 2I
Q
R2
I
R2
10k
A3
+
I
R1
D15
D13
Q14
X2 Q16
X2 Q18
D11
CA
D12
TRACKING
Figure 6. Buffer Amplifier Schematic
Basic Expandor
Figure 7 shows an application of the circuit as a simple expandor. The gain expression of the system is given by
R
V
OUT
V (I
IN
=140µA)
1
2
I
Both the resistors R is a 6.8k internal resistor. The maximum input current into the gain cell can be as large as 140µA. This corresponds to a voltage level of 140µA 6.8k=952mV peak. The input peak current into the rectifier is limited to 300µA by the internal bias system. Note that the value of R
can be increased to accommodate higher input level. R2 and
1
R
are external resistors. It is easy to adjust the ratio of R3/R2 for
3
desirable system voltage and current levels. A small R higher gain control current and smaller static and dynamic tracking
V
3
1
IN(AVG)
R2 R
1
and R2 are tied to internal summing nodes. R
1
(5)
results in
2
TRIM
1
CR
SR00699
error. However, an impedance buffer A
may be necessary if the
1
input is voltage drive with large source impedance. The gain cell output current feeds the summing node of the external
OPA A
. R3 and A2 convert the gain cell output current to the output
2
voltage. In high-performance applications, A
has to be low-noise,
2
high-speed and wide band so that the high-performance output of the gain cell will not be degraded. The non-inverting input of A
can
2
be biased at the low noise internal reference Pin 6 or 10. Resistor R
is used to bias up the output DC level of A2 for maximum swing.
4
The output DC level of A
V
REF
1
V
ODC
can be tied to a regulated power supply for a dual supply system
V
B
is given by
2
R
3
V
R
4
R
3
B
(6)
R
4
and be grounded for a single supply system. CA sets the attack time constant and CR sets the recovery time constant. *5COL
1998 Nov 03
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Philips Semiconductors Product specification
SA572Programmable analog compandor
R4 R3
+VB
17.3k
R5 100k
A1
+
C
V
IN1
IN
2.2µF
C
C
IN3
2.2µF
IN2
R2
3.3k
(7,9)
(3,13)
R1
6.8k
(8)
Figure 7. Basic Expandor Schematic
Basic Compressor
Figure 8 shows the hook-up of the circuit as a compressor. The IC is put in the feedback loop of the OPA A is as follows:
V
OUT
V
IN
R
, R
DC1
level of A
V
ODC
, and CDC form a DC feedback for A1. The output DC
DC2
is given by
1
V
V
I
1
2
REF
B
1
R
R3 V
R
DC1
R
2
R
1
IN(AVG)
DC1
R
R
4
R
R
The zener diodes D1 and D2 are used for channel overload protection.
. The system gain expression
1
1
4
DC2
2
DC2
(7)
(8)
G
BUFFER
(16)
V
REF
V
IN
(5,11)
(6,10) R6
1k
(2,14)
(4,12)
CA CR
10µF1µF
+V
CC
R4 RDC1
C
IN1
2.2µF
R3
17.3k
C1
(5,11)
(2,14)
C1
2.2µF
C2
(4,12)
.1µF
A2
9.1k
+
1k R5 (6,10)
A1
V
REF
G
BUFFER
CDC
10µF
D1
R1
6.8k
RDC2
9.1k
D2
(7,9)
V
OUT
SR00700
C
IN2
2.2µF
V
OUT
C
2.2µF
IN3
1998 Nov 03
3.3k R2
CR CA
10µF
1µF
(8)
V
CC
(16)
(3,13)
SR00701
Figure 8. Basic Compressor Schematic
8
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Philips Semiconductors Product specification
SA572Programmable analog compandor
Basic Compandor System
The above basic compressor and expandor can be applied to systems such as tape/disc noise reduction, digital audio, bucket brigade delay lines. Additional system design techniques such as
1 2
V
RMS
COMPRESSION
IN
3.0V
547.6MV 400MV
100MV
10MV
1MV
100µV
INPUT TO ∆G
AND RECT
bandlimiting, band splitting, pre-emphasis, de-emphasis and equalization are easy to incorporate. The IC is a versatile functional block to achieve a high performance audio system. Figure 9 shows the system level diagram for reference.
2
EXPANDOR
REL LEVEL ABS LEVEL
OUT
+29.54
+14.77
dB dBM
+12.0
0.0
–20
–40
–60
+11.76
–3.00 –5.78
–17.78
–37.78
–57.78
–77.78
10µV
Figure 9. SA572 System Level
–80
–97.78
SR00702
1998 Nov 03
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Philips Semiconductors Product specification
SA572Programmable analog compandor
SO16: plastic small outline package; 16 leads; body width 7.5 mm SOT162-1
1998 Nov 03
10
Page 11
Philips Semiconductors Product specification
SA572Programmable analog compandor
DIP16: plastic dual in-line package; 16 leads (300 mil) SOT38-4
1998 Nov 03
11
Page 12
Philips Semiconductors Product specification
SA572Programmable analog compandor
Data sheet status
Data sheet status
Objective specification
Preliminary specification
Product specification
Product status
Development
Qualification
Production
Definition
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make chages at any time without notice in order to improve design and supply the best possible product.
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
[1]
[1] Please consult the most recently issued datasheet before initiating or completing a design.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury . Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
Philips Semiconductors 811 East Arques Avenue P.O. Box 3409 Sunnyvale, California 94088–3409 Telephone 800-234-7381
Copyright Philips Electronics North America Corporation 1998
All rights reserved. Printed in U.S.A.
Date of release: 11-98
Document order number: 9397 750 04749
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1998 Nov 03
12
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