NDP7060 / NDB7060
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
May 1996
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
75A, 60V. R
= 0.013Ω @ VGS=10V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
C
Symbol Parameter NDP7060 NDB7060 Units
V
DSS
V
DGR
V
GSS
Drain-Source Voltage 60 V
Drain-Gate Voltage (RGS < 1 MΩ)
60 V
Gate-Source Voltage - Continuous ± 20 V
- Nonrepetitive (tP < 50 µs) ± 40
I
D
Drain Current - Continuous 75 A
- Pulsed 225
P
D
Maximum Power Dissipation @ TC = 25°C
150 W
Derate above 25°C 1 W/°C
TJ,T
T
L
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering purposes,
275 °C
1/8" from case for 5 seconds
© 1997 Fairchild Semiconductor Corporation
NDP7060.SAM
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W
I
AR
Single Pulse Drain-Source Avalanche
DSS
Energy
VDD = 25 V, ID = 75 A 550 mJ
Maximum Drain-Source Avalanche Current 75 A
OFF CHARACTERISTICS
BV
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
VDS = 60 V, V
GS
= 0 V
TJ = 125°C
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
60 V
250 µA
1 mA
100 nA
ON CHARACTERISTICS (Note 1)
V
R
I
g
GS(th)
DS(ON)
D(on)
FS
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
Static Drain-Source On-Resistance VGS = 10 V, ID = 40 A 0.01 0.013
TJ = 125°C
On-State Drain Current
VGS = 10 V, VDS = 10 V
Forward Transconductance VDS = 10 V, ID = 37.5 A 15 39 S
2 2.8 4 V
1.4 2.1 3.6
Ω
0.015 0.024
75 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 1130 1600 pF
Reverse Transfer Capacitance 380 800 pF
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
2960 3600 pF
SWITCHING CHARACTERISTICS (Note 1)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 30 V, ID = 75 A,
Turn - On Rise Time 128 400 nS
VGS = 10 V, R
GEN
= 5 Ω
17 30 nS
Turn - Off Delay Time 54 80 nS
Turn - Off Fall Time 90 200 nS
Total Gate Charge
Gate-Source Charge 14.5 nC
VDS = 48 V,
ID = 75 A, VGS = 10 V
100 115 nC
Gate-Drain Charge 51 nC
NDP7060.SAM
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS
I
ISM
V
t
I
S
SD
rr
rr
Maximum Continuos Drain-Source Diode Forward Current 75 A
Maximum Pulsed Drain-Source Diode Forward Current 225 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 37.5 A (Note 1) 0.9 1.3 V
TJ = 125°C
0.84 1.2
Reverse Recovery Time VGS = 0 V, IF = 75 A, dIF/dt = 100 A/µs 40 76 150 ns
Reverse Recovery Current 2 4.7 10 A
THERMAL CHARACTERISTICS
R
θ
R
θ
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case 1 °C/W
JC
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
JA
NDP7060.SAM
Typical Electrical Characteristics
120
V =20V
GS
100
80
60
10
8.0
7.0
6.5
6.0
5.5
40
20
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics
2
I = 40A
D
1.8
V = 10V
GS
1.6
1.4
1.2
1
DS(ON)
0.8
R , NORMALIZED
0.6
DRAIN-SOURCE ON-RESISTANCE
0.4
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
5.0
4.5
4.0
2.5
V = 5.0V
GS
2
1.5
DS(on)
1
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.5
0 20 40 60 80 100 120
5.5
6.0
I , DRAIN CURRENT (A)
D
6.5
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
1.8
V = 10V
GS
1.6
1.4
1.2
1
DS(on)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
0 20 40 60 80 100 120
T = 125°C
J
25°C
I , DRAIN CURRENT (A)
D
-55°C
7.0
8.0
10
12
20
Figure 3. On-Resistance Variation
with Temperature
60
V = 10V
DS
50
T = -55°C
25°C
J
125°C
40
30
20
D
I , DRAIN CURRENT (A)
10
0
2 3 4 5 6 7
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.2
1.1
1
0.9
0.8
0.7
GS(th)
V , NORMALIZED
0.6
GATE-SOURCE THRESHOLD VOLTAGE
0.5
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with
Temperature
V = V
DS
GS
I = 250µA
D
NDP7060.SAM
Typical Electrical Characteristics (continued)
1.15
I = 250µA
D
1.1
1.05
1
DSS
BV , NORMALIZED
0.95
DRAIN-SOURCE BREAKDOWN VOLTAGE
0.9
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage Variation with
Temperature
5000
3000
2000
1000
CAPACITANCE (pF)
500
300
200
f = 1 MHz
V = 0V
GS
1 2 5 10 20 30 60
V , DRAIN TO SOURCE VOLTAGE (V)
DS
C
C
100
50
V = 0V
GS
10
T = 125°C
J
1
0.1
0.01
S
I , REVERSE DRAIN CURRENT (A)
0.001
0.2 0.4 0.6 0.8 1 1.2 1.4
V , BODY DIODE FORWARD VOLTAGE (V)
25°C
SD
-55°C
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature
20
iss
oss
C
rss
I = 75A
D
15
10
5
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 25 50 75 100 125 150
Q , GATE CHARGE (nC)
g
V = 12V
DS
48V
24V
Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics
V
DD
t
d(on)
V
IN
V
GS
R
GEN
G
R
L
D
V
OUT
V
OUT
DUT
V
S
IN
10%
t t
on off
t
r
d(off)
90%
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit Figure 12. Switching Waveforms
90%
90%
10%
tt
f
INVERTED
NDP7060.SAM
Typical Electrical Characteristics (continued)
60
V = 10V
DS
50
40
30
20
10
FS
g , TRANSCONDUCTANCE (SIEMENS)
0
0 10 20 30 40 50 60
I , DRAIN CURRENT (A)
D
T = -55°C
J
25°C
125°C
Figure 13. Transconductance Variation with
300
DS(ON)
R Limit
100
30
10
V = 20V
3
D
I , DRAIN CURRENT (A)
1
0.3
GS
SINGLE PULSE
o
JC
R = 1 C/W
θ
T = 25°C
C
1 2 3 5 10 20 30 60 100
V , DRAIN-SOURCE VOLTAGE (V)
DS
10ms
100ms
DC
100µs
1ms
Figure 14. Maximum Safe Operating Area
Drain Current and Temperature
1
0.5
0.3
0.2
0.1
0.05
0.03
r(t), NORMALIZED EFFECTIVE
0.02
TRANSIENT THERMAL RESISTANCE
0.01
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
t ,TIME (ms)
1
R (t) = r(t) * R
JC
θ
R = 1.0 °C/W
JC
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
C
Duty Cycle, D = t /t
θ
JC
θ
1 2
JC
Figure 15. Transient Thermal Response Curve
NDP7060.SAM
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
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PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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