Datasheet NDB7050L, NDP7050L Datasheet (Fairchild Semiconductor)

NDP7050L / NDB7050L N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

March 1996

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

75A, 50V, R

= 0.015Ω @ VGS = 5V

DS(ON)

Low drive requirements allowing operation directly from logic drivers. V

GS(TH)

< 2.0V.

Critical DC electrical parameters specified at elevated temperature.

Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

175°C maximum junction temperature rating. High density cell design for extremely low R

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

________________________________________________________________________________

D

G

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter NDP7050L NDB7050L Units

V

DSS

V

DGR

V

GSS

I

D

Drain-Source Voltage 50 V Drain-Gate Voltage (RGS < 1 MΩ)

50 V

Gate-Source Voltage - Continuous ± 20 V

- Nonrepetitive (tP < 50 µs)

± 40

Drain Current - Continuous 75 A

- Pulsed 225

P

D

Total Power Dissipation @ TC = 25°C

150 W

Derate above 25°C 1 W/°C

TJ,T

Operating and Storage Temperature Range -65 to 175 °C

STG

NDP7050L.SAM

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W

I

AR

Single Pulse Drain-Source Avalanche

DSS

Energy

VDD = 25 V, ID = 75 A 550 mJ

Maximum Drain-Source Avalanche Current 75 A

OFF CHARACTERISTICS

BV I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA VDS = 50 V, V

GS

= 0 V

TJ = 125°C

Gate - Body Leakage, Forward

VGS = 20 V, VDS = 0 V

Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA

50 V

250 µA

1 mA

100 nA

ON CHARACTERISTICS (Note 1)

V

R

I g

D(on)

FS

GS(th)

DS(ON)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

TJ = 125°C

Static Drain-Source On-Resistance VGS = 5 V, ID = 37.5 A 0.01 0.015

TJ = 125°C

On-State Drain Current

VGS = 5 V, VDS = 10 V

Forward Transconductance VDS = 10 V, ID = 37.5 A 15 67 S

1 1.3 2 V

0.65 0.8 1.5

Ω

0.016 0.024

75 A

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance 1100 1600 pF Reverse Transfer Capacitance 310 800 pF

VDS = 25 V, VGS = 0 V, f = 1.0 MHz

4200 4000 pF

SWITCHING CHARACTERISTICS (Note 1)

t t

Q Q Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDD = 30 V, ID = 75 A, Turn - On Rise Time 460 600 nS

VGS = 5 V, R

GEN

= 10Ω

23 40 nS

RGS = 10 Ω

Turn - Off Delay Time 100 150 nS Turn - Off Fall Time 270 400 nS

Total Gate Charge Gate-Source Charge 13 nC

VDS = 48 V, ID = 75 A, VGS = 5 V

86 115 nC

Gate-Drain Charge 62 nC

NDP7050L.SAM

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS

I ISM V

t I

S

SD

rr

Maximum Continuos Drain-Source Diode Forward Current 75 A Maximum Pulsed Drain-Source Diode Forward Current 225 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = 37.5 A (Note 1) 0.92 1.3 V

TJ = 125°C

Reverse Recovery Time VGS = 0 V, IF = 60A, Reverse Recovery Current 4.6 10 A

dIF/dt = 100 A/µs

0.85 1.2 108 150 ns

THERMAL CHARACTERISTICS

R

θ

R

θ

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Thermal Resistance, Junction-to-Case 1 °C/W

JC

Thermal Resistance, Junction-to-Ambient 62.5 °C/W

JA

NDP7050L.SAM

R , NORMALIZED

V , NORMALIZED

Typical Electrical Characteristics

120

100

D

I , DRAIN-SOURCE CURRENT (A)

V = 10V

GS

5.0

80

60

40

20

4.5

0

0 0.5 1 1.5 2 2.5 3

6.0

4.0

3.5

3.0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics

2

I = 40A

1.75

1.5

1.25

DS(ON)

0.75

DRAIN-SOURCE ON-RESISTANCE

0.5

D

V = 10V

GS

1

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

2.5

2

1.8

1.6

1.4

1.2

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.8

0.6

V = 3.0V

GS

3.5

4.0

4.5

1

0 20 40 60 80 100 120

I , DRAIN CURRENT (A)

D

5.0

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

2

V = 5V

GS

1.8

1.6

1.4

1.2

1

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.8

0.6 0 20 40 60 80 100 120

T = 125°C

J

25°C

I , DRAIN CURRENT (A)

D

-55°C

6.0 10

Figure 3. On-Resistance Variation

with Temperature

80

V = 10V

DS

60

T = -55°C

J

125°C

Figure 4. On-Resistance Variation with Drain

Current and Temperature

1.4

1.2

25°C

1

40

0.8

D

I , DRAIN CURRENT (A)

20

0

0 1 2 3 4

V , GATE TO SOURCE VOLTAGE (V)

GS

GS(th)

0.6

GATE-SOURCE THRESHOLD VOLTAGE

0.4

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature

V = V

GSDS

I = 250µA

D

NDP7050L.SAM

BV , NORMALIZED

Typical Electrical Characteristics (continued)

1.15

I = 250µA

D

1.1

1.05

1

DSS

0.95

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.9

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Breakdown Voltage Variation with

Temperature

7000 5000

2000

1000

CAPACITANCE (pF)

f = 1 MHz

500

V = 0V

300

200

GS

1 2 3 5 10 20 30 50

V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

iss

80 50

V = 0V

GS

10

T = 125°C

J

1

0.1

0.01

S

I , REVERSE DRAIN CURRENT (A)

0.001

0.2 0.4 0.6 0.8 1 1.2 1.4

25°C

V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature

10

I = 75A

D

8

C

oss

C

rss

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 40 80 120 160

Q , GATE CHARGE (nC)

g

V = 12V

DS

48V

24V

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

t t

on off

r

90%

10%

50%

10%

PULSE WIDTH

t

d(off)

V

GEN

R

GEN

V

DD

t

d(on)

V

IN

G

R

GS

R

L

D

V

OUT

V

OUT

DUT

V

IN

S

Figure 11. Switching Test Circuit Figure 12. Switching Waveforms

50%

90%

10%

tt

f

INVERTED

NDP7050L.SAM

Typical Electrical Characteristics (continued)

100

V =10V

DS

80

60

40

20

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

0 10 20 30 40 50 60

I , DRAIN CURRENT (A)

D

T = -55°C

J

25°C

125°C

Figure 13. Transconductance Variation with Drain

300 200

DS(ON)

R Limit

100

50

20

10

V = 10V

5

D

I , DRAIN CURRENT (A)

2

1

GS

SINGLE PULSE

o

R = 1 C/W

JC

θ

T = 25 °C

C

1 2 3 5 10 20 30 50 100

V , DRAIN-SOURCE VOLTAGE (V))

DS

100µs

1ms

10ms

100ms

DC

Figure 14. Maximum Safe Operating Area

10µs

Current and Temperature

1

0.5

0.3

0.2

0.1

0.05

0.03

r(t), NORMALIZED EFFECTIVE

0.02

TRANSIENT THERMAL RESISTANCE

0.01

0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

t ,TIME (ms)

1

R (t) = r(t) * R

JC

θ

R = 1.0 °C/W

JC

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

C

Duty Cycle, D = t /t

θ

JC

1 2

JC

θ

Figure 15. Transient Thermal Response Curve

NDP7050L.SAM

Datasheet NDB7050L, NDP7050L Datasheet (Fairchild Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual