Datasheet NDP4060L Datasheet (Fairchild Semiconductor)

NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

April 1996

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

15A, 60V. R Low drive requirements allowing operation directly from logic

drivers. V Critical DC electrical parameters specified at elevated

temperature. Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low R

= 0.1Ω @ VGS = 5V

DS(ON)

< 2.0V.

GS(TH)

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

________________________________________________________________________________

D

G

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter NDP4060L NDB4060L Units

V

DSS

V

DGR

V

GSS

Drain-Source Voltage 60 V Drain-Gate Voltage (RGS < 1 MΩ)

60 V

Gate-Source Voltage - Continuous ± 16 V

- Nonrepetitive (tP < 50 µs) ± 25

I

D

Drain Current - Continuous 15 A

- Pulsed 45

P

D

Total Power Dissipation @ TC = 25°C

50 W

Derate above 25°C 0.33 W/°C TJ,T T

L

Operating and Storage Temperature -65 to 175 °C

STG

Maximum lead temperature for soldering

275 °C

purposes, 1/8" from case for 5 seconds

NDP4060L Rev. B / NDB4060L Rev. C

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

W

DSS

I

AR

Single Pulse Drain-Source Avalanche

VDD = 25 V, ID = 15 A 40 mJ

Energy Maximum Drain-Source Avalanche Current 15 A

OFF CHARACTERISTICS

BV I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA VDS = 60 V, V

GS

= 0 V

TJ =125°C

Gate - Body Leakage, Forward

VGS = 16 V, VDS = 0 V

Gate - Body Leakage, Reverse VGS = -16 V, VDS= 0 V -100 nA

60 V

250 µA

1 mA

100 nA

ON CHARACTERISTICS (Note 1)

V

R

I g

D(on)

GS(th)

DS(ON)

FS

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

TJ =125°C

Static Drain-Source On-Resistance VGS = 5 V, ID = 7.5 A 0.085 0.1

TJ =125°C

VGS = 10 V, ID = 15 A On-State Drain Current VGS = 5 V, VDS = 10 V 15 A Forward Transconductance

VDS = 10 V, ID = 7.5 A

1 1.5 2 V

0.65 1.1 1.5

Ω

0.14 0.16

0.07 0.08

3 8 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance 170 200 pF Reverse Transfer Capacitance 50 100 pF

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

510 600 pF

SWITCHING CHARACTERISTICS (Note 1)

t t

Q Q Q

D(on)

r

D(off)

f

Turn - On Delay Time Turn - On Rise Time 151 250 nS

Turn - Off Delay Time 35 100 nS

VDD = 30 V, ID = 15 A,

VGS = 5 V, R

R

= 51 Ω

GS

GEN

= 51 Ω,

Turn - Off Fall Time 61 150 nS

g

gs

gd

Total Gate Charge Gate-Source Charge 2 nC Gate-Drain Charge 6.1 nC

VDS = 48 V,

ID = 15 A, VGS = 5 V

9 20 nS

11 17 nC

NDP4060L Rev. B / NDB4060L Rev. C

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

ISM V

t

rr

I

rr

SD

Maximum Continuos Drain-Source Diode Forward Current 15 A Maximum Pulsed Drain-Source Diode Forward Current 45 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7.5 A (Note 1) 0.95 1.3 V

TJ = 125°C

Reverse Recovery Time VGS = 0 V, I F = 15 A, Reverse Recovery Current 3.6 7 A

dI F /dt = 100 A/µs

0.88 1.2 51 100 ns

THERMAL CHARACTERISTICS

R

JC

θ

R

JA

θ

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Thermal Resistance, Junction-to-Case 3 °C/W Thermal Resistance, Junction-to-Ambient 62.5 °C/W

NDP4060L Rev. B / NDB4060L Rev. C

Typical Electrical Characteristics

30

25

20

15

10

5

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V = 10V

GS

V , DRAIN-SOURCE VOLTAGE (V)

DS

6.0

5.0

4.5

4.0

3.5

3.0

2.5

2

V = 3.0V

1.8

GS

1.6

1.4

1.2

1

DS(on)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6 0 5 10 15 20 25 30

3.5

4.0

I , DRAIN CURRENT (A)

D

4.5

5.0

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Gate Voltage

and Drain Current

2.2

I = 7.5A

D

2

V = 5V

GS

1.8

1.6

1.4

1.2 1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

0.4

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

2.5

V = 5 V

GS

2

1.5

DS(on)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5 0 5 10 15 20 25 30

T = 125°C

J

25°C

I , DRAIN CURRENT (A)

D

-55°C

6.0

10

Figure 3. On-Resistance Variation

with Temperature

20

V = 10V

DS

16

12

8

D

I , DRAIN CURRENT (A)

4

0

1 2 3 4 5 6

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 4. On-Resistance Variation with Drain

Current and Temperature

1.2

1.1

1

0.9

th

0.8

V , NORMALIZED

0.7

GATE-SOURCE THRESHOLD VOLTAGE

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation with

Temperature

V = V

DS GS

I = 250µA

D

NDP4060L Rev. B / NDB4060L Rev. C

Typical Electrical Characteristics (continued)

1.15

I = 250µA

1.125

1.075

1.025

DSS

0.975

BV , NORMALIZED

0.925

DRAIN-SOURCE BREAKDOWN VOLTAGE

D

1.1

1.05

1

0.95

0.9

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Breakdown Voltage Variation with

Temperature

1500 1000

500

200

100

CAPACITANCE (pF)

50

20

f = 1 MHz V = 0V

GS

0.1 0.2 0.5 1 2 5 10 20 50 V , DRAIN TO SOURCE VOLTAGE (V)

DS

20 10

V = 0V

GS

5

1

T = 125°C

J

0.5

0.1

0.01

S

I , REVERSE DRAIN CURRENT (A)

0.001

0.2 0.4 0.6 0.8 1 1.2 1.4 V , BODY DIODE FORWARD VOLTAGE (V)

SD

25°C

-55°C

Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature

10

I = 7.5A

C

iss

C

oss

C

rss

D

8

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 4 8 12 16 20

Q , GATE CHARGE (nC)

g

V = 12V

DS

48V

24V

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

V

GEN

R

GEN

V

DD

t

V

d(on)

OUT

IN

V

IN

G

R

GS

R

L

D

V

OUT

DUT

S

10%

t t

on off

t

r

d(off)

90%

10%

50%

PULSE WIDTH

Figure 11. Switching Test Circuit Figure 12. Switching Waveforms

tt

f

90%

10%

INVERTED

90%

50%

NDP4060L Rev. B / NDB4060L Rev. C

Typical Electrical Characteristics (continued)

12

V = 10V

DS

10

8

6

4

2

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

0 4 8 12 16 20

T = -55°C

J

25°C

I , DRAIN CURRENT (A)

D

125°C

Figure 13. Transconductance Variation with

70 50

20

RDS(ON) LIMIT

10

5

V = 10V

GS

SINGLE PULSE

D

I , DRAIN CURRENT (A)

1

0.5 1 2 5 10 30 50 70

o

R = 3 C/W

θ

JC

T = 25°C

C

V , DRAIN-SOURCE VOLTAGE (V)

DS

1ms

10ms

50ms

DC

Figure 14. Maximum Safe Operating Area

Drain Current and Temperature

1

0.5

0.3

0.2

0.1

0.05

0.03

r(t), NORMALIZED EFFECTIVE

0.02

TRANSIENT THERMAL RESISTANCE

0.01

0.00001 0.00005 0.0001 0.0005 0.001 0.005 0.01 0.05 0.1 0.5 1

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

t ,TIME

1

R (t) = r(t) * R

JC

θ

R = 3.0 °C/W

JC

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

Duty Cycle, D = t /t

θ

C

JC

θ

1 2

100us

JC

Figure 15. Transient Thermal Response Curve

NDP4060L Rev. B / NDB4060L Rev. C

Datasheet NDP4060L Datasheet (Fairchild Semiconductor)

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