Datasheet NDH8520C Datasheet (Fairchild Semiconductor)

December 1996

NDH8520C

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description Features

These dual N- and P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.

___________________________________________________________________________________

N-Channel 2.8 A, 30 V,R
R

=0.1Ω @ VGS=4.5 V P-Channel -2.2 A,-30 V,

DS(ON)

R

=0.11Ω @ VGS=-10 V

DS(ON)

R

=0.18 Ω @ VGS=-4.5 V.

DS(ON)

=0.07Ω @ VGS=10 V

DS(ON)

Proprietary SuperSOTTM-8 package design using copper lead
frame for superior thermal and electrical capabilities.

High density cell design for extremely low R

DS(ON)

.

Exceptional on-resistance and maximum DC current capability.

5

6

7

4

3

2

8

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter N-Channel P-Channel Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 30 -30 V
Gate-Source Voltage ±20 ±20 V
Drain Current - Continuous (Note 1) 2.8 -2.2 A

- Pulsed 10 -10

P

D

TJ,T

Power Dissipation for Single Operation (Note 1) 0.8 W
Operating and Storage Temperature Range -55 to 150 °C

STG

THERMAL CHARACTERISTICS

R

θ

R

θ

Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W

JA

Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

JC

1

© 1997 Fairchild Semiconductor Corporation

NDH8520C Rev.B

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS

BV

I

I
I

DSS

DSS

GSSF

GSSR

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 30 V

VGS = 0 V, ID = -250 µA

Zero Gate Voltage Drain Current VDS = 24 V, V

VDS = -24 V, V

= 0 V N-Ch 1 µA

GS

TJ = 55oC

= 0 V P-Ch -1 µA

GS

TJ = 55oC

P-Ch -30 V

10 µA

-10 µA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V All 100 nA
Gate - Body Leakage, Reverse

VGS = -20 V, VDS= 0 V

All -100 nA

ON CHARACTERISTICS (Note 2)

V

R

GS(th)

DS(ON)

Gate Threshold Voltage

Static Drain-Source On-Resistance

VDS = VGS, ID = 250 µA

TJ = 125oC

VDS = VGS, ID = -250 µA

TJ = 125oC

VGS = 10 V, ID = 2.8 A

N-Ch 1 1.6 2.8 V

0.8 1.2 2

P-Ch -1 -1.5 -3

-0.8 -1.2 -2.2

N-Ch 0.05 0.07

Ω

TJ = 125oC 0.07 0.125

VGS = 4.5 V, ID = 2.3 A

0.077 0.1

VGS = -10 V, ID = -2.2 A P-Ch 0.1 0.11

TJ = 125oC

0.14 0.2

VGS = -4.5 V, ID = -1.7 A 0.17 0.18

I

D(on)

On-State Drain Current

VGS = 10 V, VDS = 5 V

N-Ch 10 A
VGS = 4.5 V, VDS = 5 V 3
VGS = -10 V, VDS = -5 V

P-Ch -10
VGS = -4.5 V, VDS = -5 V -4

g

FS

Forward Transconductance

VDS = 10 V, ID = 2.8 A

N-Ch 5.8 S
VDS = -10 V, ID = -2.2 A P-Ch 3.8

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance N-Channel

VDS = 15 V, VGS = 0 V,
f = 1.0 MHz

C

oss

C

rss

Output Capacitance N-Ch 170 pF

P-Channel

Reverse Transfer Capacitance N-Ch 55 pF

VDS = -15 V, VGS = 0 V,
f = 1.0 MHz

N-Ch 270 pF

P-Ch 340

P-Ch 218

P-Ch 100

NDH8520C Rev.B

Electrical Characteristics (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)

t

t

t

t

D(on)

r

D(off)

f

Turn - On Delay Time N-Channel

VDD = 10 V, ID = 1 A,
V

= 10 V, R

Turn - On Rise Time N-Ch 15 28 ns

GEN

GEN

= 6 Ω

P-Channel

Turn - Off Delay Time N-Ch 15 28 ns

VDD = -10 V, ID = -1 A,
V

= -10 V, R

GEN

GEN

= 6 Ω

N-Ch 8 15 ns

P-Ch 8 15

P-Ch 18 35

P-Ch 28 50

Turn - Off Fall Time N-Ch 5 10 ns

P-Ch 20 35

Q

g

Q

gs

Q

gd

Total Gate Charge N-Channel

VDS = 15 V,
ID = 2.8 A, VGS = 10 V

N-Ch 9.4 17 nC

P-Ch 10.9 14.5

Gate-Source Charge N-Ch 0.8 nC

P-Channel

Gate-Drain Charge N-Ch 3 nC

VDS = -15 V,
ID = -2.2 A, VGS = -10 V

P-Ch 1.4

P-Ch 3.6

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current N-Ch 0.67 A

P-Ch -0.67

V

Notes:

1. R

SD

design while R

Drain-Source Diode Forward Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

is determined by the user's board design.

CA

θ

VGS = 0 V, IS = 0.67 A
VGS = 0 V, IS = -0.67 A

(Note2)

(Note2)

N-Ch 0.7 1.2 V

P-Ch -0.76 -1.2

is guaranteed by

JC

θ

T

P

(t) =

D

R

Typical R

JA

θ

156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.

Scale 1 : 1 on letter size paper.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

T

J−TA

θJ A

for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment:

J−TA

=

R

(t)

θJ C+RθCA

2

= I

(t )×R

D

(t)

DS(ON)@T

J

NDH8520C Rev.B

Typical Electrical Characteristics: N-Channel

15

V =10V

GS

12

D

I , DRAIN-SOURCE CURRENT (A)

7.0

9

6

3

0

0 0.5 1 1.5 2 2.5 3

6.0

5.0

4.5

4.0

3.5

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. N-Channel On-Region Characteristics.

1.6

I = 2.8A

D

V = 4.5V

1.4

1.2

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

GS

1

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

3.0

2.5

V = 3.5V

GS

2

4.0

4.5

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5
0 3 6 9 12 15

I , DRAIN CURRENT (A)

D

5.0

6.0

7.0
10

Figure 2. N-Channel On-Resistance Variation with Gate

Voltage and Drain Current.

2

V = 10 V

GS

1.5

1

DS(on)

0.5

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0

0 3 6 9 12 15

I , DRAIN CURRENT (A)

D

T = 125°C

J

25°C

-55°C

Figure 3. N-Channel On-Resistance Variation with

Temperature.

10

V = 10V

DS

8

6

4

D

I , DRAIN CURRENT (A)

2

0

0 1 2 3 4 5

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

125°C

Figure 5. N-Channel Transfer
Characteristics.

25°C

Figure 4. N-Channel On-Resistance Variation with Drain

Current and Temperature.

1.2

V = V

DS

GS

I = 250µA

1.1

1

0.9

th

V , NORMALIZED

0.8

GATE-SOURCE THRESHOLD VOLTAGE

0.7

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

D

Figure 6. N-Channel Gate Threshold Variation

with Temperature.

NDH8520C Rev.B

Typical Electrical Characteristics: N-Channel (continued)

1.15

I = 250µA

D

1.1

1.05

1

DSS

BV , NORMALIZED

0.95

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.9

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 7. N-Channel Breakdown Voltage Variation

with Temperature.

800
600

400

C

iss

200

100

CAPACITANCE (pF)

f = 1 MHz

50

V = 0V

GS

30

0.1 0.2 0.5 1 3 5 10 15 30
V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

C

oss

rss

10

5

V =0V

GS

T = 125°C

1

0.5

0.1

0.01

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

V , BODY DIODE FORWARD VOLTAGE (V)

SD

J

25°C

-55°C

Figure 8. N-Channel Body Diode Forward Voltage

Variation with Current and Temperature.

10

I = 2.8A

D

8

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 2 4 6 8 10

Q , GATE CHARGE (nC)

g

V = 10V

DS

15V

20V

Figure 9. N-Channel Capacitance Characteristics.

12

9

V = 10V

DS

T = -55°C

J

25°C

125°C

6

3

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

0 3 6 9 12 15 18

I , DRAIN CURRENT (A)

D

Figure 11. N-Channel Transconductance Variation

with Drain Current and Temperature.

Figure 10. N-Channel Gate Charge Characteristics.

NDH8520C Rev.B

Typical Electrical Characteristics: P-Channel (continued)

-10

V = -10V

GS

-8

-6

-4

-2

D

I , DRAIN-SOURCE CURRENT (A)

-6.0

-5.0

-4.5

-4.0

-3.5

0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 12. P-Channel On-Region Characteristics.

1.6

I = -2.2A

D

V = -10V

1.4

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

-3.0

3

V = -3.5V

GS

2.5

-4.0

2

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

-5-4-3-2-10

0.5

-4.5

-5.0

-5.5

I , DRAIN CURRENT (A)

D

-6.0

-10

-10-8-6-4-20

Figure 13. P-Channel On-Resistance Variation with

Gate Voltage and Drain Current.

1.8

V = -10V

GS

1.5

1.2

0.9

R , NORMALIZEDDS(on)

0.6

DRAIN-SOURCE ON-RESISTANCE

0.3

T = 125°C

J

25°C

I , DRAIN CURRENT (A)

D

-55°C

-10-8-6-4-20

Figure 14. P-Channel On-Resistance Variation with

Temperature.

-10

V = -10V

DS

-8

-6

-4

D

I , DRAIN CURRENT (A)

-2

0

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25°C

125°C

Figure 16. P-Channel Transfer Characteristics.

Figure 15. P-Channel On-Resistance Variation with

Drain Current and Temperature.

1.2

V = V

DS

GS

1.1

1

0.9

GS(th)

V , NORMALIZED

0.8

GATE-SOURCE THRESHOLD VOLTAGE

0.7

-6-5-4-3-2-1

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

I = -250µA

D

Figure 17. P-Channel Gate Threshold Variation

with Temperature.

NDH8520C Rev.B

Typical Electrical Characteristics: P-Channel (continued)

1.08

I = -250µA

D

1.06

1.04

1.02

1

DSS

0.98

BV , NORMALIZED

0.96

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.94

-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)

J

Figure 18. P-Channel Breakdown Voltage

Variation with Temperature.

1000

800
600

400

200

CAPACITANCE (pF)

100

f = 1 MHz
V = 0 V

GS

50

0.1 0.2 0.5 1 2 5 10 20 30

-V , DRAIN TO SOURCE VOLTAGE (V)
DS

C

C

C

iss

rss

oss

10

V = 0V

5

GS

1

0.1

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001
0 0.2 0.4 0.6 0.8 1 1.2

-V , BODY DIODE FORWARD VOLTAGE (V)

T = 125°C

J

25°C

-55°C

SD

Figure 19. P-Channel Body Diode Forward

Voltage Variation with Current and
Temperature.

10

I = -2.2A

D

8

6

4

2

GS

-V , GATE-SOURCE VOLTAGE (V)
0

0 2 4 6 8 10 12

Q , GATE CHARGE (nC)

g

V = -10V

DS

-15V

-20V

Figure 20. P-Channel Capacitance Characteristics.

10

V = - 10V

DS

8

6

4

T = -55°C

J

25°C

125°C

2

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

I , DRAIN CURRENT (A)

D

Figure 22. P-Channel Transconductance Variation

with Drain Current and Temperature.

Figure 21. P-Channel Gate Charge Characteristics.

-15-12-9-6-30

NDH8520C Rev.B

Typical Thermal Characteristics: N & P-Channel

20
10

5

RDS(ON) LIMIT

2
1

0.5

0.2

V = 10V

0.1

D

I , DRAIN CURRENT (A)

0.05

0.02

0.01

GS

SINGLE PULSE

R = See Note 1

JA

θ

T = 25°C

A

0.1 0.2 0.5 1 2 5 10 20 30 50
V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

1ms

10ms

100ms

1s

10s

Figure 23. N-Channel Maximum Safe Operating

Area.

1

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

0.1

0.05

0.02

0.01

Single Pulse

100us

20
10

5

2
1

0.5

0.1

D

-I , DRAIN CURRENT (A)

0.05

0.01

0.1 0.2 0.5 1 2 5 10 20 30 50

Figure 24. P-Channel Maximum Safe Operating

t , TIME (sec)

1

RDS(ON) LIMIT

V = -10V

GS

SINGLE PULSE

R = See Note 1

JA

θ

A

T = 25°C

A

Area.

1s

10s

DC

- V , DRAIN-SOURCE VOLTAGE (V)

DS

R (t) = r(t) * R

JA

θ

R = See Notes 1

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t / t

JA

θ

JA

θ

1

2

1ms

10ms

100ms

Figure 25. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note1. Transient thermal response will change

depending on the circuit board design.

V

DD

t

V

d(on)

OUT

V

IN

V

GS

R

GEN

G

R

L

D

V

OUT

DUT

t t

on off

t

r

t

d(off)

90%

10%

90%

10%

90%

V

S

IN

50%

50%

10%

PULSE WIDTH

Figure 26. N or P-Channel Switching Test Circuit. Figure 27. N or P-Channel Switching Waveforms.

t

f

NDH8520C Rev.B

SuperSOTTM-8 Tape and Reel Data and Package Dimensions

SSOT-8 Packaging
Configuration: Figure 1.0

Customized Label

F63TNR Label

Emboss ed Carrier Tape

Antistatic Cover Tape

Static Dissi pative

852

F

831N

Packaging Description:

SSOT-8 parts are shipped in tape. The carrier tape is
made from a di ssipative (carbo n filled) po lycarbonate
resin. The cov er tap e is a mu lt ilayer film (Heat Act ivat ed
Adhesiv e in nat ure) prim aril y c omp osed of po lyes ter film ,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standar d option are ship ped wi th
3,000 u n i t s pe r 13" o r 330c m d ia m et er r e el. Th e r e el s ar e
dark blue in color and is made of po ly s t yr ene plas t ic (anti­static c oated). Other option comes in 500 units per 7" or
177c m diam eter reel. This and s ome o ther opt ion s are
furth er described in the Packaging Information table.

These fu ll reels are individu ally barcode labeled and
placed in side a standard intermediat e box (illus trated in
figur e 1.0) made of recyclable cor rugated brow n paper.
One box cont ains t wo reels maxi mum. And t hese bo xes
are placed ins ide a barc ode labeled shipp ing bo x whic h
co m e s i n di ffe r e n t si z es de pend in g on t he nu m b e r of pa rts
sh i ppe d.

852

852

F

831N

F

831N

852

F

831N

852

F

831N

Pin 1

SSOT-8 Packaging Information

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)

Note/Comments

184mm x 187mm x 47mm

Stan dard

(no flow c ode )

TNR

3,000 500

13" Dia

343x64x343 184x187x47

6,000 1,000

0.0416 0.0416

0.5615 0.0980

D84Z

TNR

7" Dia

F63TNR
Label

Pizza Box for D84Z Option

SSOT-8 Tape Leader and Trailer
Configuration: Figur e 2.0

F63TNR
Label

SSOT-8 Unit Orientation

343mm x 342mm x 64mm

Inter mediate box for Standar d

and L 99Z Options

F63TNR Label sampl e

LOT: CBVK7 41B019

FSID: FDR835N

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

F63TNR Label

QTY: 3000

SPEC:

N/F: F (F63TNR)3

Carrier Tape

Cover Tape

Tr ailer Tape
300mm mi n i mum or
38 empty pock ets

Components

Leader Tape
500mm mi n i mum or
62 empty pocket s

August 1999, Rev. C

SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued

SSOT-8 Embossed Carrier Tape
Configuration: Figur e 3.0

T

K0

Wc

B0

P0

D0

E1

F

W

E2

Tc

A0

D1

P1

User Direction of Feed

Dimensions are in millimeter

Pkg type

SSOT-8

(12mm)

Notes: A0, B0, and K0 dimensions are determined with r espect to t he EIA/Jedec RS-481

SSOT-8 Reel Configuration: Figur e 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

4.47

5.00

12.0

1.55

1.50

1.75

10.25

+/-0.10

+/-0.10

+/-0.3

+/-0.05

+/-0.10

+/-0.10

5.50

min

+/-0.05

rotational and lateral movement requi rements (see sketches A, B, and C).

20 deg maximum

B0

20 deg maximum component rotation

Sketc h A (Side or Front Sec tional Vi ew)

Component Rotation

W1 Measured at Hub

A0

Sketc h B (Top View)

Component Rotation

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

8.0
+/-0.1

4.0
+/-0.1

1.37

0.280
+/-0.150

9.5
+/-0.025

0.5mm
maximum

+/-0.10

0.5mm
maximum

Sketc h C (Top View )

Component lateral movement

0.06
+/-0.02

Dim A

max

13" Diameter Option

Tape Size

12mm 7" Dia

12mm 13" Dia

 1998 Fairchild Semiconductor Corporation

Reel

Option

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL- USL)

7.00

177.8

13.00
330

0.059

1.5

0.059

1.5

Dim N

See detail AA

W3

W2 max Measured at Hub

Dimensions are in inches and millimeters

512 +0.020/ -0.008
13 +0.5/-0.2

512 +0.020/ -0.008
13 +0.5/-0.2

0.795

20.2

0.795

20.2

5.906
150

7.00
178

Dim D

min

0.488 +0.078/-0.000

12.4 +2/0

0.488 +0.078/-0.000

12.4 +2/0

Diameter Option

7"

DETAIL AA

0.724

18.4

0.724

18.4

See detail AA

B Min

Dim C

0.469 – 0.606

11.9 – 15.4

0.469 – 0.606

11.9 – 15.4

July 1999, Rev. C

SuperSOTTM-8 Tape and Reel Data and Package Dimensions, continued

SuperSOT-8 (FS PKG Code 34, 35)

1 : 1

Scale 1:1 on letter size paper

Dimensio ns shown below are in:

inches [mil lime ters ]

Part Weight per unit (gram): 0.0416

September 1998, Rev. A

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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

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2

E

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TM

FACT™
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®

FAST
FASTr™
GTO™
HiSeC™

ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QFET™
QS™

Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8

TinyLogic™
UHC™
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.