Datasheet NDC7003P Datasheet (Fairchild)

NDC7003P

May 2002

NDC7003P

S2



MOSFET

G2

o

=25

A

Features

• –0.34A, –60 V. R
R

• Low gate charge

• Fast switching speed

• High performance trench technology for low R

• SuperSOT

smaller than standard S O-8); low profile (1mm thic k)

C unless otherwise noted

(Note 1c)

= 5 Ω @ VGS = –10 V

DS(ON)

= 7 Ω @ VGS = –4.5 V

DS(ON)

TM

-6 package: small f ootprint (72%

4

5

6

3

2

1

±20

0.9

0.7

DS(ON)

V

W

°C

Dual P-Channel PowerTrench

General Description

These dual P-Channel Enhancement Mode Power Field
Effect Transistors are produced using Fairchild’s
proprietary Trench Technology. This very high density
process has been designed to minimize on-state
resistance, provide rugged and reliable performance
and fast switching. This product is particularly suited to
low voltage applications requiring a low current high
side switch.

D2

S1

D1

SuperSOT -6

TM

G1

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

V

Drain-Source Voltage –60 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current – Continuous (Note 1a) –0.34 A
– Pulsed –1
PD

TJ, T

STG

Power Dissipation for Single Operation (Note 1a) 0.96
(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a) 130

(Note 1) 60

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

.03P NDC7003P 7’’ 8mm 3000 units

2002 Fairchild Semiconductor Corporation

°C/W

NDC7003P Rev B(W)

NDC7003P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1

DSS

I

Gate–Body Leakage,

GSS

Breakdown Voltage Temperature
Coefficient

J

= 0 V, ID = –250 µA

V

GS

I

= –250 µA, Referenced to 25°C

D

= ±20 V, VDS = 0 V

V

GS

–60 V

–57

mV/°C

µA

±100

nA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On-State Drain Current

D(on)

= VGS, ID = –250 µA

V

DS

I

= –250 µA, Referenced to 25°C

D

= –10 V, ID = –0.34 A

V

GS

= –4.5 V, ID = –0.25 A

V

GS

= –10 V,ID = –0.34 A, TJ=125°C

V

GS

= –10 V VDS = –10 V

V

GS

gFS Forward Transconductance VDS = –10 V, ID = –0.34 A 700 mS

–1 –1.9 –3.5 V

3.2

1.2

1.5

1.9

–1

5

7.5
10

mV/°C

Ω

A

Dynamic Characteristics

C

Input Capacitance 66 pF

iss

C

Output Capacitance 13 pF

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance

= –25 V, V

V

DS

f = 1.0 MHz

V

15mV, f = 1.0 MHz

GS =

= 0 V,

GS

6 pF

11.2

Ω

Switching Characteristics (Note 2)

t

Turn–On Delay Time 3.2 6.4 ns

d(on)

tr Turn–On Rise Time 10 20 ns
t

Turn–Off Delay Time 8 16 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 1.6 2.2 nC
Qgs Gate–Source Charge 0.3 nC
Qgd Gate–Drain Charge

= –25 V, ID = –1 A,

V

DD

= –10 V, R

V

GS

V

= –25 V, ID = –0.34 A,

DS

V

= –10 V

GS

GEN

= 6 Ω

1 2 ns

0.3 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drai n–Source Diode Forward Current –0.34 A
VSD Drain–Source Diode Forward

Voltage

Notes:

1. R

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

the drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

is guaranteed by design while R

θJC

a) 130 °C/W when

mounted on a 0.125
in2 pad of 2 oz.
copper.

θCA

VGS = 0 V, IS = –0.34 A(Note 2)

is determined by the user's board design.

b) 140°C/W when mounted

on a .005 in
copper

2

pad of 2 oz

–0.8 –1.4

c) 180°C/W when mounted on a

minimum pad.

V

NDC7003P Rev B(W)

)

Typical Characteristics

1

VGS = -10V

0.8

0.6

0.4

, DRAIN CURRENT (A)

D

-I

0.2

0

012345

-V

DS

-4.5V

-4.0V -6.0V

, DRAIN TO SOURCE VOLTAGE (V)

-3.5V

-3.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

2.2

2

VGS= -3.0V

1.8

1.6

1.4

, NORMALIZED

DS(ON)

1.2

R

1

DRAIN-SOURCE ON-RESISTANCE

0.8

00.20.40.60.81

-3.5V

-4.0V

-ID, DRAIN CURRENT (A)

-4.5V

Drain Current and Gate Voltage.

-6.0V

NDC7003P

-10V

1.8
ID = -0.34A

1.6

V

= -10V

GS

1.4

1.2

1

, NORMALIZED

DS(ON)

0.8

R

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

Figure 3. On-Resistance Variation with

Temperature.

1

VDS = -5V

0.8

0.6

0.4

, DRAIN CURRENT (A

D

-I

0.2

0

12345

-V

GS

TA = -55oC

125oC

, GATE T O SOURCE VOLTAGE (V)

25oC

5

4

3

2

, ON-RESISTANCE (OHM)

TA = 25oC

1

DS(ON)

R

0

246810

TA = 125oC

-V

, GATE TO SOURCE V O LTAGE (V)

GS

ID = -0.17A

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001

0.2 0.4 0.6 0.8 1 1.2

TA = 125oC

25oC

BODY DIODE FORWARD VOLTAGE (V)

-V

SD,

-55oC

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

NDC7003P Rev B(W)

)

Typical Characteristics

NDC7003P

10

ID = -0.34A

8

6

4

, GATE-SOURCE VOLTAGE (V)

2

GS

-V

0

00.40.81.21.62

Q

VDS = -25V

, GATE CHARGE (nC)

g

-30V

-48V

100

80

60

40

CAPACITANCE (pF)

20

C

RSS

0

0 102030405060

C

ISS

C

OSS

-V

, DRAIN TO SOURCE VOLTAGE (V)

DS

f = 1 MHz
V

GS

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

10

R

LIMIT

DS(ON)

1

10ms

0.1

, DRAIN CURRENT (A)

D

-I

VGS = -10V

SINGLE PULSE

= 180oC/W

R

θ

JA

T

= 25oC

A

0.01
110100

, DRAIN-SOURCE VOLTAGE (V)

-V

DS

100ms

1s

DC

10µs

1ms

10

8

6

4

2

P(pk), PEAK TRANSIENT POWER (W)

0

0.001 0.01 0.1 1 10 100

t1, TIME (sec)

SINGLE PULSE
R

= 180°C/W

θJA

= 25°C

T

A

= 0 V

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum

Power Dissipation.

1

r(t), NORMALIZED EFF EC T I VE T R A N SIENT

0.01

THERMAL RESISTANC E

0.001

0.1

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

R

(t) = r(t) * R

θ

JA

R

= 180oC/W

θ

JA

P(pk

t

1

t

2

T

- TA = P * R

J

Duty Cycle, D = t

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient themal response will change depending on the circuit board design.

θ

JA

(t)

θ

JA

/ t

1

2

NDC7003P Rev B(W)

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOL T
DenseTrench
DOME
EcoSPARK
E2CMOS
EnSigna

TM

TM

FACT
FACT Quiet Series

STAR*POWER is used under license

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC

2

I

C
ISOPLANAR
LittleFET
MicroFET
MicroPak

MICROWIRE
OPTOLOGIC

â

OPTOPLANAR
PACMAN
POP
Power247
PowerTrench

â

QFET
QS
QT Optoelectronics
Quiet Series

SILENT SWITCHER
SMART START
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation

ââ

UHC
UltraFET
VCX

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

â

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Formative or
In Design

First Production

Full Production

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H5