Datasheet NDB7052, NDP7052 Datasheet (Fairchild Semiconductor)

June 1997

NDP7052 / NDB7052 N-Channel Enhancement Mode Field Effect Transistor

General Description Features

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

________________________________________________________________________________

75 A, 50 V. R

= 0.01 Ω @ VGS= 10 V.

DS(ON)

Critical DC electrical parameters specified at elevated temperature.

Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

175°C maximum junction temperature rating. High density cell design for extremely low R

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

D

G

S

Absolute Maximum Ratings T

Symbol Parameter NDP7052 NDB7052 Units

V

DSS

V

DGR

V

GSS

I

D

P

D

TJ,T

THERMAL CHARACTERISTICS

R

θJC

R

θ JA

Drain-Source Voltage 50 V Drain-Gate Voltage (RGS < 1 MΩ)

Gate-Source Voltage - Continuous ±20 V

- Nonrepetitive (tP < 50 µs)

Drain Current - Continuous 75 A

- Pulsed 225 Total Power Dissipation @ TC = 25°C

Derate above 25°C 1 W/°C

Operating and Storage Temperature Range -65 to 175 °C

STG

Thermal Resistance, Junction-to-Case 1 °C/W Thermal Resistance, Junction-to-Ambient 62.5 °C/W

= 25°C unless otherwise noted

C

50 V

±40

150 W

NDP7052 Rev.B1

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note)

W

DSS

I

AR

Single Pulse Drain-Source Avalanche Energy VDD = 25 V, ID = 75 A 550 mJ Maximum Drain-Source Avalanche Current 75 A

OFF CHARACTERISTICS

BV

∆BV

I

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 V Breakdown Voltage Temp. Coefficient

/∆T

J

Zero Gate Voltage Drain Current

ID = 250 µA, Referenced to 25 o C VDS = 40 V, V

GS

= 0 V

57

10 µA

mV/oC

TJ = 125°C 1 mA

I

GSSF

I

GSSR

Gate - Body Leakage, Forward

VGS = 20 V, VDS = 0 V

Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA

100 nA

ON CHARACTERISTICS (Note)

∆V

V

GS(th)

Gate Threshold VoltageTemp. Coefficient

/∆T

J

Gate Threshold Voltage

ID = 250 µA, Referenced to 25 o C VDS = VGS, ID = 250 µA

-5.2

mV/oC

2 2.2 3 V

TJ = 125°C 1.4 1.55 2.4

R

I g

D(on)

DS(ON)

FS

Static Drain-Source On-Resistance

VGS = 10 V, ID = 37.5 A

TJ = 125°C On-State Drain Current VGS = 10 V, VDS= 10 V 60 A Forward Transconductance

VDS = 10 V, ID = 37.5 A

0.008 0.01

0.011 0.018

52 S

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance 1300 pF Reverse Transfer Capacitance 460 pF

VDS = 25 V, VGS = 0 V, f = 1.0 MHz

3400 pF

SWITCHING CHARACTERISTICS (Note)

t t

Q Q Q

D(on)

r

D(off)

f

Turn - On Delay Time Turn - On Rise Time 147 250 nS

VDD = 30 V, ID = 75 A, VGS = 10 V, R

GEN

= 5 Ω

Turn - Off Delay Time 85 150 nS Turn - Off Fall Time 165 300 nS

g

gs

gd

Total Gate Charge Gate-Source Charge 12 nC Gate-Drain Charge 46 nC

VDS = 24 V, ID = 37.5 A, VGS = 10 V

15 30 nS

117 160 nC

DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

ISM V t

rr

I

rr

SD

Maximum Continuos Drain-Source Diode Forward Current 75 A Maximum Pulsed Drain-Source Diode Forward Current 225 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = 13 A (Note) 0.9 1.3 V Reverse Recovery Time

VGS = 0 V, IF = 37.5 A,

75 150 ns

Reverse Recovery Current dIF/dt = 100 A/µs 4 10 A

Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Ω

NDP7052 Rev.B1

Typical Electrical Characteristics

100

V = 10V

GS

80

60

40

20

D

I , DRAIN-SOURCE CURRENT (A)

0

0 0.5 1 1.5 2 2.5 3

6.0

7.0

5.5

5.0

4.5

V , DRAIN-SOURCE VOLTAGE (V)

DS

4.0

3.5

Figure 1. On-Region Characteristics.

2

I =37.5A

D

1.8

V = 10V

GS

1.6

1.4

1.2 1

DS(ON)

R , NORMALIZED

0.8

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

2.5

V =4.0V

GS

2

4.5

5.0

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5 0 20 40 60 80 100

5.5

6.0

6.5

I , DRAIN CURRENT (A)

D

7.0

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

0.05

0.04

0.03

0.02

0.01

DS(ON)

R , ON-RESISTANCE (OHM)

0

2 4 6 8 10

V , GATE TO SOURCE VOLTAGE (V)

GS

125°C

25°C

8.0

10.0

ID=37.5A

Figure 3. On-Resistance Variation

with Temperature.

60

V = 10V

DS

50

40

30

20

D

I , DRAIN CURRENT (A)

10

0

1 1.5 2 2.5 3 3.5 4 4.5 5

V , GATE TO SOURCE VOLTAGE (V)

T = -55°C

J

25°C

125°C

GS

Figure 5. Transfer Characteristics.

Figure 4. On Resistance Variation with

Gate-To- Source Voltage.

60

V =0V

GS

10

5 1

0.5

0.1

0.01

0.001

S

I , REVERSE DRAIN CURRENT (A)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4

T = 125°C

J

25°C

-55°C

V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 6. Body Diode Forward Voltage

Variation with Source Current and Temperature.

NDP7052 Rev.B1

Typical Electrical Characteristics (continued)

10

I = 37.5A

D

8

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 20 40 60 80 100 120 140

Q , GATE CHARGE (nC)

V = 12V

DS

g

24V

48V

Figure 7. Gate Charge Characteristics.

400 200

DS(ON)

100

R Limit

50

20 10

V = 10V

GS

5

SINGLE PULSE

D

I , DRAIN CURRENT (A)

2 1

0.5

0.5 1 3 5 10 20 30 80

o

R = 1 C/W

JC

θ

T = 25 °C

C

V , DRAIN-SOURCE VOLTAGE (V))

DS

100µs

1ms

10ms

100ms

DC

6000

C

iss

2000

C

1000

CAPACITANCE (pF)

500

f = 1 MHz V = 0V

GS

200

1 5 10 20 50

V , DRAIN TO SOURCE VOLTAGE (V)

DS

oss

C

rss

Figure 8.Capacitance Characteristics.

2000

1500

1000

POWER (W)

500

0

0.1 0.3 1 3 10 30 100 300 1,000 SINGLE PULSE TIME (mS)

SINGLE PULSE

R =1° C/W

JC

θ

T = 25°C

C

Figure 9. Maximum Safe Operating Area.

1

0.5

0.3

0.2

0.1

0.05

0.03

0.02

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.01

0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

Figure 11. Transient Thermal Response Curve.

t ,TIME (ms)

1

Figure 10. Single Pulse Maximum Power Dissipation.

R (t) = r(t) * R

JC

θ

R = 1°C/W

JC

θ

P(pk)

t

1

t

2

T - T = P * R (t)

CJ

Duty Cycle, D = t /t

JC

θ

JC

θ

1

2

NDP7052 Rev.B1