Datasheet NDH8502P Datasheet (Fairchild Semiconductor)

NDH8502P Dual P-Channel Enhancement Mode Field Effect Transistor

General Description Features

December 1996

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

-2.2 A, -30 V. R R

Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R Exceptional on-resistance and maximum DC current

capability.

= 0.11 Ω @ VGS = -10 V

DS(ON)

= 0.18 Ω @ VGS = -4.5 V.

DS(ON)

.

___________________________________________________________________________________________

5

6

7

8

4

3

2

1

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter NDH8502P Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -30 V Gate-Source Voltage ±20 V Drain Current - Continuous (Note 1) -2.2 A

- Pulsed -10

P

D

TJ,T

Maximum Power Dissipation (Note 1) 0.8 W Operating and Storage Temperature Range -55 to 150 °C

STG

THERMAL CHARACTERISTICS

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

NDH8502P Rev.C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS

BV I

I I

DSS

GSSF

GSSR

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -30 V Zero Gate Voltage Drain Current

VDS = -24 V, V

GS

= 0 V

TJ= 55°C

-1 µA

-10 µA Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA Gate - Body Leakage, Reverse

VGS = -20 V, VDS= 0 V

-100 nA

ON CHARACTERISTICS (Note 2)

V

R

I

g

GS(th)

DS(ON)

D(on)

FS

Gate Threshold Voltage VDS = VGS, ID = - 250 µA -1 -1.5 -3 V

TJ= 125°C

-0.8 -1.2 -2.2

Static Drain-Source On-Resistance VGS = -10 V, ID = -2.2 A 0.1 0.11

0.14 0.2

0.17 0.18

-10 A

-4

3.8 S

On-State Drain Current

Forward Transconductance

TJ= 125°C VGS = -4.5 V, ID = -1.7 A VGS = -10 V, VDS = -5 V VGS = -4.5 V, VDS = -5 V VDS = -10 V, ID = -2.2 A

Ω

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -15 V, V Output Capacitance 218 pF

f = 1.0 MHz

GS

= 0 V,

340 pF

Reverse Transfer Capacitance 100 pF

SWITCHING CHARACTERISTICS (Note 2)

t t t t Q Q Q

D(on)

r

D(off)

f

Turn - On Delay Time Turn - On Rise Time 18 35 ns

VDD = -10 V, ID = -1 A, VGS = -10 V, R

GEN

= 6 Ω

Turn - Off Delay Time 28 50 ns Turn - Off Fall Time 20 35 ns

g

gs

gd

Total Gate Charge Gate-Source Charge 1.4 nC Gate-Drain Charge 3.6 nC

VDS = -15 V, ID = -2.2 A, VGS = -10 V

8 15 ns

10.9 14.5 nC

NDH8502P Rev.C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R design while R

P

Typical R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Maximum Continuous Drain-Source Diode Forward Current -0.67 A Drain-Source Diode Forward Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

(t)

D

is determined by the user's board design.

CA

θ

T

=

R

JA

θ

156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.

T

J−TA

θJA

using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

J−TA

=

(t)

R

θJC+RθCA

2

= I

(t) ×R

DS(ON ) T

D

(t)

J

VGS = 0 V, IS = -0.67 A (Note 2)

-0.76 -1.2 V

is guaranteed by

JC

θ

NDH8502P Rev.C

Typical Electrical Characteristics

-10

V = -10V

GS

-6.0

-5.0

-8

-6

-4

-2

D

I , DRAIN-SOURCE CURRENT (A)

0

V , DRAIN-SOURCE VOLTAGE (V)

DS

-4.5

-4.0

-3.5

-3.0

-5-4-3-2-10

3

V = -3.5V

GS

2.5

2

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5

-4.0

-4.5

-5.0

I , DRAIN CURRENT (A)

D

-5.5

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

1.6

I = -2.2A

D

V = -10V

1.4

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

1.8

V = -10V

GS

1.5

1.2

0.9

R , NORMALIZEDDS(on)

0.6

DRAIN-SOURCE ON-RESISTANCE

0.3

T = 125°C

J

25°C

I , DRAIN CURRENT (A)

D

-55°C

-6.0

-10

-10-8-6-4-20

Figure 3. On-Resistance Variation with

Temperature.

-10

V = -10V

DS

-8

-6

-4

D

I , DRAIN CURRENT (A)

-2

0

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

Figure 5. Transfer Characteristics.

25°C

125°C

-6-5-4-3-2-1

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.2

V = V

DS

1.1

1

0.9

GS(th)

V , NORMALIZED

0.8

GATE-SOURCE THRESHOLD VOLTAGE

0.7

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

I = -250µA

D

Figure 6. Gate Threshold Variation with

Temperature.

GS

NDH8502P Rev.C

Typical Electrical Characteristics

1.08

I = -250µA

D

1.06

1.04

1.02

1

DSS

0.98

BV , NORMALIZED

0.96

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.94

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Breakdown Voltage Variation with

Temperature.

1000

800 600

400

200

CAPACITANCE (pF)

100

f = 1 MHz V = 0 V

GS

50

0.1 0.2 0.5 1 2 5 10 20 30

-V , DRAIN TO SOURCE VOLTAGE (V) DS

C

iss

oss

rss

10

V = 0V

5

GS

1

0.1

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

-V , BODY DIODE FORWARD VOLTAGE (V)

T = 125°C

J

25°C

-55°C

SD

Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

10

I = -2.2A

D

8

6

4

2

GS

-V , GATE-SOURCE VOLTAGE (V)

0

0 2 4 6 8 10 12

Q , GATE CHARGE (nC)

g

V = -10V

DS

-15V

-20V

Figure 9. Capacitance Characteristics.

-V

V

IN

D

V

GS

R

GEN

G

S

Figure 11. Switching Test Circuit.

DD

Figure 10. Gate Charge Characteristics.

t t

on off

t

R

L

d(on)

r

90%

V

OUT

V

OUT

DUT

10%

t

d(off)

90%

10%

tt

f

90%

V

IN

50%

10%

PULSE WIDTH

INVERTED

Figure 12. Switching Waveforms.

NDH8502P Rev.C

Typical Electrical and Thermal Characteristics

12

V = - 5V

DS

10

8

6

T = -55°C

J

25°C

125°C

4

2

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

I , DRAIN CURRENT (A)

D

Figure 13. Transconductance Variation with Drain

Current and Temperature.

1

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

0.1

0.05

0.02

0.01

Single Pulse

-20-15-10-50

20 10

5

RDS(ON) LIMIT

2 1

0.5

V = -4.5V

0.1

D

0.05

-I , DRAIN CURRENT (A)

0.01

0.1 0.2 0.5 1 2 5 10 20 30 50

GS

SINGLE PULSE

R = See Note 1c

JA

θ

A

T = 25°C

A

- V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 14. Maximum Safe Operating Area.

R (t) = r(t) * R

JA

θ

R = See Notes 1

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t / t

t , TIME (sec)

1

DC

10s

JA

θ

100ms

1s

1

θ

100us

1ms

10ms

JA

2

Figure 15. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1. Transient thermal response will change

depending on the circuit board design.

NDH8502P Rev.C

Datasheet NDH8502P Datasheet (Fairchild Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual