Page 1
NDH8320C
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description Features
December 1996
These dual N- and P -Channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as notebook computer power
management and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
N-Channel 3 A, 20 V, R
R
=0.075 Ω @ VGS=2.7 V P-Channel -2A, -20V,
DS(ON)
R
=0.13 Ω @ VGS=-4.5 V
DS(ON)
R
=0.19 Ω @ VGS=-2.7 V.
DS(ON)
=0.06 Ω @ VGS=4.5 V
DS(ON)
Proprietary SuperSOTTM-8 package design using copper lead
frame for superior thermal and electrical capabilities.
High density cell design for extremely low R
DS(ON)
.
Exceptional on-resistance and maximum DC current
capability.
___________________________________________________________________________________
5
6
7
8
4
3
2
1
T
Absolute Maximum Ratings
= 25°C unless otherwise noted
A
Symbol Parameter N-Channel P-Channel Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 20 -20 V
Gate-Source Voltage 8 -8 V
Drain Current - Continuous (Note 1) 3 -2 A
- Pulsed 15 -10
P
T
J,TSTG
D
Power Dissipation for Single Operation (Note 1) 0.8 W
Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
R
θ
R
θ
© 1997 Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W
JA
Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
JC
NDH8320C Rev.B
Page 2
Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BV
I
I
I
DSS
DSS
GSSF
GSSR
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA N-Ch 20 V
VGS = 0 V, ID = -250 µA
Zero Gate Voltage Drain Current VDS = 16 V, V
VDS = -16 V, V
= 0 V N-Ch 1 µA
GS
TJ = 55oC
= 0 V P-Ch -1 µA
GS
TJ = 55oC
P-Ch -20 V
10 µA
-10 µA
Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V All 100 nA
Gate - Body Leakage, Reverse
VGS = -8 V, VDS= 0 V
All -100 nA
ON CHARACTERISTICS (Note 2)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS = VGS, ID = 250 µA
TJ = 125oC
VDS = VGS, ID = -250 µA
TJ = 125oC
VGS = 4.5 V, ID = 3 A
N-Ch 0.4 0.7 1 V
0.3 0.45 0.7
P-Ch -0.4 -0.6 -1
-0.3 -0.42 -0.7
N-Ch 0.047 0.06
Ω
TJ = 125oC 0.07 0.11
VGS = 2.7 V, ID = 2.6 A
0.059 0.075
VGS = -4.5 V, ID = -2 A P-Ch 0.102 0.13
TJ = 125oC
0.15 0.23
VGS = -2.7 V, ID = -1.7 A 0.147 0.19
I
D(on)
On-State Drain Current
VGS = 4.5 V, VDS = 5 V
N-Ch 15 A
VGS = 2.7 V, VDS = 5 V 5
VGS = -4.5 V, VDS = -5 V
P-Ch -10
VGS = -2.7 V, VDS = -5 V -4
g
FS
Forward Transconductance
VDS = 5 V, ID = 3 A
N-Ch 10 S
VDS = -5 V, ID = -2 A P-Ch 5
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance N-Channel
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
C
oss
C
rss
Output Capacitance N-Ch 220 pF
P-Channel
Reverse Transfer Capacitance N-Ch 85 pF
VDS = -10 V, VGS = 0 V,
f = 1.0 MHz
N-Ch 415 pF
P-Ch 515
P-Ch 250
P-Ch 85
NDH8320C Rev.B
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Electrical Characteristics (T
= 25°C unless otherwise noted)
A
Symbol Parameter Conditions Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
t
t
t
t
D(on)
r
D(off)
f
Turn - On Delay Time N-Channel
VDD = 5 V, ID = 1 A,
V
= 4.5 V, R
Turn - On Rise Time N-Ch 25 45 ns
GEN
GEN
= 6 Ω
P-Channel
Turn - Off Delay Time N-Ch 30 55 ns
VDD = -5 V, ID = -1 A,
V
= -4.5 V, R
GEN
GEN
= 6 Ω
N-Ch 8 15 ns
P-Ch 10 20
P-Ch 27 50
P-Ch 37 65
Turn - Off Fall Time N-Ch 8 15 ns
P-Ch 39 75
Q
g
Q
gs
Q
gd
Total Gate Charge N-Channel
VDS = 10 V,
ID = 3 A, VGS = 4.5 V
N-Ch 10 15 nC
P-Ch 7.8 11
Gate-Source Charge N-Ch 0.9 nC
P-Channel
Gate-Drain Charge N-Ch 3.5 nC
VDS = -10 V,
ID = -2 A, VGS = -4.5 V
P-Ch 1.2
P-Ch 1.8
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current N-Ch 0.67 A
P-Ch -0.67
V
Notes:
1. R
SD
design while R
Drain-Source Diode Forward Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JA
θ
is determined by the user's board design.
CA
θ
VGS = 0 V, IS = 0.67 A
VGS = 0 V, IS = -0.67 A
(Note2)
(Note2)
N-Ch 0.7 1.2 V
P-Ch -0.75 -1.2
is guaranteed by
JC
θ
T
P
(t) =
D
R
Typical R
JA
θ
156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
T
J−TA
θ
for single device operation using the board layout shown below on 4.5"x5" FR-4 PCB in a still air environment:
J−TA
=
R
+R
(t)
θ
J A
J C
2
= I
(t )×R
D
(t)
θ
CA
DS(ON)@T
J
NDH8320C Rev.B
Page 4
Typical Electrical Characteristics: N-Channel
15
V =4.5V
GS
12
9
6
3
D
I , DRAIN-SOURCE CURRENT (A)
0
3.0
0 0.5 1 1.5 2 2.5 3
2.7
2.5
2.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. N-Channel On-Region Characteristics.
1.8
I = 3A
D
1.6
V = 4.5V
GS
1.4
1.2
1
DS(ON)
0.8
R , NORMALIZED
0.6
DRAIN-SOURCE ON-RESISTANCE
0.4
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
2
1.75
V = 2.0V
GS
1.5
2.5
1.25
2.7
3.0
3.5
DS(on)
1
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0.75
0 3 6 9 12 15
I , DRAIN CURRENT (A)
D
4.5
Figure 2. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
2
V = 4.5V
GS
1.5
1
DS(on)
0.5
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
0
0 3 6 9 12 15
T = 125°C
J
25°C
-55°C
I , DRAIN CURRENT (A)
D
Figure 3. N-Channel On-Resistance Variation with
Temperature.
10
V =- 5V
DS
8
6
4
D
I , DRAIN CURRENT (A)
2
0
0 0.5 1 1.5 2 2.5 3
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
125°C
Figure 5. N-Channel Transfer
Characteristics.
Figure 4. N-Channel On-Resistance Variation with Drain
Current and Temperature.
1.3
1.2
1.1
1
0.9
th
0.8
V , NORMALIZED
0.7
0.6
GATE-SOURCE THRESHOLD VOLTAGE
0.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
V = V
DS
GS
I = 250µA
D
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
NDH8320C Rev.B
Page 5
Typical Electrical Characteristics: N-Channel (continued)
1.15
I = 250µA
D
1.1
1.05
1
DSS
BV , NORMALIZED
0.95
DRAIN-SOURCE BREAKDOWN VOLTAGE
0.9
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. N-Channel Breakdown Voltage
Variation with Temperature.
1200
800
500
300
200
CAPACITANCE (pF)
100
f = 1 MHz
V = 0V
GS
40
0.1 0.2 0.5 1 3 5 10 20
V , DRAIN TO SOURCE VOLTAGE (V)
DS
C
C
C
iss
oss
rss
10
5
V =0V
GS
1
0.1
0.01
0.001
S
I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
T = 125°C
J
25°C
-55°C
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 8. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature.
5
I = 3A
D
4
3
2
1
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 2 4 6 8 10 12
Q , GATE CHARGE (nC)
g
V = 5V
DS
10
15V
Figure 9. N-Channel Capacitance Characteristics.
20
V = 5V
DS
16
12
8
4
FS
g , TRANSCONDUCTANCE (SIEMENS)
0
0 2 4 6 8 10
I , DRAIN CURRENT (A)
D
T = -55°C
J
25°C
125°C
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
Figure 10. N-Channel Gate Charge Characteristics.
NDH8320C Rev.B
Page 6
Typical Electrical Characteristics: P-Channel (continued)
-20
-16
-12
-8
-4
D
I , DRAIN-SOURCE CURRENT (A)
0
GS
V = -5.0V
V , DRAIN-SOURCE VOLTAGE (V)
DS
-4.5
-4.0
-3.5
-3.0
-2.7
-2.5
-2.0
-5-4-3-2-10
2
1.8
V = -2.5 V
GS
1.6
-2.7
1.4
1.2
DS(on)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.8
-3.0
-3.5
-4.0
-4.5
I , DRAIN CURRENT (A)
D
-5.0
Figure 12. P-Channel On-Region Characteristics. Figure 13. P-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
1.6
I = -2A
1.4
1.2
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
D
V =- 4.5V
GS
1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 14. P-Channel On-Resistance Variation with
Temperature.
2
V = -4.5V
GS
T = 125°C
1.5
J
25°C
1
R , NORMALIZEDDS(on)
DRAIN-SOURCE ON-RESISTANCE
0.5
I , DRAIN CURRENT (A)
D
-55°C
Figure 15. P-Channel On-Resistance Variation with
Drain Current and Temperature.
-20-16-12-8-40
-20-16-12-8-40
-10
V = -5V
DS
-8
-6
-4
D
I , DRAIN CURRENT (A)
-2
0
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25°C
Figure 16. P-Channel Transfer Characteristics.
125°C
1.2
V = V
DS
1.1
GS
I = -250µA
D
1
0.9
0.8
GS(th)
V , NORMALIZED
0.7
GATE-SOURCE THRESHOLD VOLTAGE
0.6
-3.5-3-2.5-2-1.5-1-0.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 17. P-Channel Gate Threshold Variation
with Temperature.
NDH8320C Rev.B
Page 7
Typical Electrical Characteristics: P-Channel (continued)
1.1
1.08
I = -250µA
D
1.06
1.04
1.02
1
DSS
0.98
BV , NORMALIZED
0.96
DRAIN-SOURCE BREAKDOWN VOLTAGE
0.94
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
Figure 18. P-Channel Breakdown Voltage
Variation with Temperature.
1200
800
500
300
200
f = 1 MHz
CAPACITANCE (pF)
V = 0 V
GS
100
50
0.1 0.2 0.5 1 2 5 10 20
-V , DRAIN TO SOURCE VOLTAGE (V)
DS
C
C
C
iss
oss
rss
10
V = 0V
4
GS
1
0.1
0.01
0.001
S
-I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
-V , BODY DIODE FORWARD VOLTAGE (V)
SD
T = 125°C
J
25°C
-55°C
Figure 19. P-Channel Body Diode Forward
Voltage Variation with Current and
Temperature.
5
I = -2A
D
4
3
2
1
GS
-V , GATE-SOURCE VOLTAGE (V)
0
0 2 4 6 8
Q , GATE CHARGE (nC)
g
V = -5V
DS
-15V
-10V
Figure 20. P-Channel Capacitance Characteristics.
12
V = - 5V
DS
10
8
6
4
2
FS
g , TRANSCONDUCTANCE (SIEMENS)
0
I , DRAIN CURRENT (A)
D
T = -55°C
J
25°C
125°C
Figure 22. P-Channel Transconductance Variation
with Drain Current and Temperature.
Figure 21. P-Channel Gate Charge Characteristics.
-20-15-10-50
NDH8320C Rev.B
Page 8
Typical Thermal Characteristics: N & P-Channel
40
20
10
RDS(ON) LIMIT
5
1
0.5
0.1
D
I , DRAIN CURRENT (A)
0.05
0.01
V = 4.5V
GS
SINGLE PULSE
R = See Note 1
JA
θ
T = 25°C
A
0.1 0.2 0.5 1 2 5 10 20 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
10s
DC
100us
1ms
10ms
100ms
1s
Figure 23. N-Channel Maximum Safe Operating
Area.
1
D = 0.5
0.2
0.1
0.01
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
0.1
0.05
0.02
0.01
Single Pulse
D
-I , DRAIN CURRENT (A)
0.05
0.01
t , TIME (sec)
1
20
10
5
2
RDS(ON) LIMIT
1
0.5
V = -4.5V
0.1
0.1 0.2 0.5 1 2 5 10 20 40
GS
SINGLE PULSE
R = See Note 1
JA
θ
A
T = 25°C
A
- V , DRAIN-SOURCE VOLTAGE (V)
DS
10s
DC
100us
1ms
10ms
100ms
1s
Figure 24. P-Channel Maximum Safe Operating
Area.
R (t) = r(t) * R
JA
θ
R = See Notes 1
JA
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
A
Duty Cycle, D = t / t
JA
θ
JA
θ
1
2
Figure 25. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note1 . Transient thermal response will change
depending on the circuit board design.
V
DD
V
IN
R
L
D
V
GS
R
GEN
G
DUT
S
Figure 26. N or P-Channel Switching Test Circuit.
V
OUT
t t
on off
t
d(off)
90%
10%
V
t
d(on)
OUT
10%
t
r
90%
90%
V
IN
50%
50%
10%
PULSE WIDTH
Figure 27. N or P-Channel Switching Waveforms.
t
f
NDH8320C Rev.B
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