Datasheet NDH8304P Datasheet (Fairchild Semiconductor)

May 1997

NDH8304P Dual P-Channel Enhancement Mode Field Effect Transistor

General Description Features

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

-2.7 A, -20 V. R R

Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R Exceptional on-resistance and maximum DC current

capability.

___________________________________________________________________________________________

= 0.07 Ω @ VGS = -4.5 V

DS(ON)

= 0.095 Ω @ VGS = -2.7 V.

DS(ON)

.

Absolute Maximum Ratings T

Symbol Parameter

V

DSS

V

GSS

I

D

Drain-Source Voltage -20 V Gate-Source Voltage ±8 V Drain Current - Continuous (Note 1) -2.7 A

- Pulsed -10

P

D

TJ,T

Maximum Power Dissipation (Note 1) 0.8 W Operating and Storage Temperature Range -55 to 150 °C

STG

THERMAL CHARACTERISTICS

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1) 156 °C/W Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

= 25°C unless otherwise noted

A

5

6

7

8

NDH8304P

4

3 2

1

Units

NDH8304P Rev.C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS

BV I

DSS

I

GSSF

I

GSSR

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V Zero Gate Voltage Drain Current

VDS = -16 V, V

GS

= 0 V

TJ= 55°C

-1 µA

-10 µA Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA Gate - Body Leakage, Reverse

VGS = -8 V, VDS= 0 V

-100 nA

ON CHARACTERISTICS (Note 2)

V

R

I

g

GS(th)

DS(ON)

D(on)

FS

Gate Threshold Voltage VDS = VGS, ID = - 250 µA -0.4 -0.7 -1 V

TJ= 125°C

-0.3 -0.5 -0.8

Static Drain-Source On-Resistance VGS = -4.5 V, ID = -2.7 A 0.061 0.07

0.087 0.125

0.082 0.095

-10 A

-3 8 S

On-State Drain Current

Forward Transconductance

TJ= 125°C VGS = -2.7 V, ID = -2.3 A VGS = -4.5 V, VDS = -5 V VGS = -2.7 V, VDS = -5 V VDS = -5 V, ID = -2.7 A

Ω

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -10 V, V Output Capacitance 415 pF

f = 1.0 MHz

GS

= 0 V,

865 pF

Reverse Transfer Capacitance 150 pF

SWITCHING CHARACTERISTICS (Note 2)

t t t t Q Q Q

D(on)

r

D(off)

f

Turn - On Delay Time Turn - On Rise Time 25 50 ns

VDD = -5 V, ID = -1 A, VGS = -4.5 V, R

GEN

= 6 Ω

Turn - Off Delay Time 78 150 ns Turn - Off Fall Time 55 100 ns

g

gs

gd

Total Gate Charge Gate-Source Charge 2.4 nC Gate-Drain Charge 5.1 nC

VDS = -10 V, ID = -2.7 A, VGS = -4.5 V

11 22 ns

16 23 nC

NDH8304P Rev.C

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

A

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Notes:

1. R design while R

P

Typical R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Maximum Continuous Drain-Source Diode Forward Current -0.67 A Drain-Source Diode Forward Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R

JA

θ

(t)

D

is determined by the user's board design.

CA

θ

T

=

R

JA

θ

T

J−TA

θJA

J−TA

=

(t)

R

θ

JC

2

= I

(t) ×R

DS(ON ) T

D

+R

(t)

θ

CA

J

using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

VGS = 0 V, IS = -0.67 A (Note 2)

156oC/W when mounted on a 0.0025 in2 pad of 2oz copper.

-0.7 -1.2 V

is guaranteed by

JC

θ

NDH8304P Rev.C

Typical Electrical Characteristics

-15 V =-4.5V

GS

-3.5

-3.0

-12

-9

-6

-3

D

I , DRAIN-SOURCE CURRENT (A)

0

V , DRAIN-SOURCE VOLTAGE (V)

DS

-2.7

-2.5

-2.0

-1.5

-4-3-2-10

2.5

V = -2.0V

GS

2

1.5

DS(on)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5

-2.5

-2.7

-3.0

I , DRAIN CURRENT (A)

D

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

1.6

I = -2.7A

D

V = -4.5V

1.4

1.2

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

GS

1

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

1.8

V = -4.5V

GS

1.6

1.4

1.2

1

0.8

R , NORMALIZEDDS(on)

0.6

DRAIN-SOURCE ON-RESISTANCE

0.4

T = 125°C

J

25°C

-55°C

I , DRAIN CURRENT (A)

D

-3.5

-4.5

-15-12-9-6-30

Figure 3. On-Resistance Variation with

Temperature.

-8

V = -5V

DS

-6

-4

-2

D

I , DRAIN CURRENT (A)

0

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

Figure 5. Transfer Characteristics.

25°C

125°C

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.2

V = V

DS

1.1

1

0.9

0.8

0.7

GS(th)

V , NORMALIZED

0.6

GATE-SOURCE THRESHOLD VOLTAGE

0.5

-2.5-2-1.5-1-0.5

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

GS

I = -250µA

D

Figure 6. Gate Threshold Variation with

Temperature.

NDH8304P Rev.C

Typical Electrical Characteristics

1.1

I = -250µA

D

1.08

1.06

1.04

1.02

1

DSS

0.98

BV , NORMALIZED

0.96

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.94

-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Breakdown Voltage Variation with

Temperature.

2500

1500

1000

500

300

CAPACITANCE (pF)

f = 1 MHz

200

V = 0 V

GS

100

0.1 0.2 0.5 1 2 5 10 20

-V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

iss

oss

rss

10

V = 0V

GS

3 1

0.5

0.1

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

T = 125°C

J

25°C

-55°C

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.

5

I = -2.7A

D

4

3

2

1

GS

-V , GATE-SOURCE VOLTAGE (V) 0

0 5 10 15 20

Q , GATE CHARGE (nC)

g

V = -5V

DS

-15V

-10V

Figure 9. Capacitance Characteristics.

-V

DD

V

IN

D

V

GS

R

GEN

G

S

Figure 11. Switching Test Circuit.

Figure 10. Gate Charge Characteristics.

t t

on off

t

R

L

d(on)

r

90%

V

OUT

V

OUT

DUT

10%

t

d(off)

90%

10%

tt

f

90%

V

IN

50%

10%

PULSE WIDTH

INVERTED

Figure 12. Switching Waveforms.

NDH8304P Rev.C

Typical Electrical and Thermal Characteristics

20

V = -4.5V

DS

16

12

T = -55°C

J

25°C

125°C

8

4

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

I , DRAIN CURRENT (A)

D

Figure 13. Transconductance Variation with Drain

Current and Temperature.

1

D = 0.5

0.2

0.1

0.01

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.001

0.0001 0.001 0.01 0.1 1 10 100 300

0.2

0.1

0.05

0.02

0.01

0.01 Single Pulse

Single Pulse

-20-16-12-8-40

15 10

5

RDS(ON) LIMIT

2 1

0.5

0.1

D

0.05

-I , DRAIN CURRENT (A)

0.01

0.1 0.2 0.5 1 2 5 10 20 30

V = -4.5V

GS

SINGLE PULSE

R = See Note 1

JA

θ

A

T = 25°C

A

- V , DRAIN-SOURCE VOLTAGE (V)

DS

DC

Figure 14. Maximum Safe Operating Area.

R (t) = r(t) * R

JA

θ

R = See Note 1

JA

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

A

Duty Cycle, D = t / t

t , TIME (sec)

1

10s

1s

JA

θ

1

10ms

100ms

JA

θ

2

1ms

Figure 15. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1 .Transient thermal response will change

depending on the circuit board design.

NDH8304P Rev.C

Datasheet NDH8304P Datasheet (Fairchild Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual