Datasheet 2N7002, NDS7002A, 2N7000, NDF7000A Datasheet (National)

March 1993

2N7000/2N7002/NDF7000A/NDS7002A
N-Channel Enhancement Mode Field Effect Transistor

2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor

General Description

These n-channel enhancement mode field effect transistors
are produced using National’s very high cell density third
generation DMOS technology. These products have been
designed to minimize on-state resistance provide rugged
and reliable performance and fast switching. They can be
used, with a minimum of effort, in most applications requir­ing up to 400 mA DC and can deliver pulsed currents up to

Features

Y

Efficient high density cell design approaching
(3 million/in

Y

Voltage controlled small signal switch

Y

Rugged

Y

High saturation current

Y

Low RDS(ON)

2

)

2A. This product is particularly suited to low voltage, low
current applications, such as small servo motor controls,
power MOSFET gate drivers, and other switching applica­tions.

TL/G/11378– 2

TO-92

7000 Series

TL/G/11378– 1

TO-236 AB

(SOT-23)

TL/G/11378– 3

7002 Series

Absolute Maximum Ratings

Symbol Parameter 2N7000 2N7002 NDF7000A NDS7002A Units

V

DSS

V

DGR

V

GSS

I

D

P

D

TJ,T

T

L

Drain-Source Voltage 60 V

Drain-Gate Voltage (R

Gate-Source Voltage

s

1MX)60V

GS

g

40 V

Drain CurrentÐContinuous 200 115 400 280 mA

ÐPulsed 500 800 2000 1500 mA

Total Power Dissipation@T

e

25§C 400 200 625 300 mW

A

Derating above 25§C 3.2 1.6 5 2.4 mW/§C

Operating and Storage Temperature Range

STG

Maximum Lead Temperature for Soldering
Purposes, (/16* from Case for 10 Seconds

b

55 to 150

300

b

65 to 150

C

§

C

§

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

TL/G/11378

2N7000

e

T

Electrical Characteristics

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

I

DSS

I

GSSF

ON CHARACTERISTICS*

V

GS(th)

r

DS(ON)

V

DS(ON)

I

D(ON)

g

FS

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

SWITCHING CHARACTERISTICS*

t

on

t

off

BODY-DRAIN DIODE RATINGS

I

S

I

SM*

V

SD*

THERMAL CHARACTERISTICS

R

iJA

R

iJC

*Pulse Test: Pulse Widths300 ms, Duty Cycles2.0%.

Drain-Source Breakdown Voltage V

DSS

Zero Gate Voltage Drain Current V

Gate-Body Leakage, Forward V

Gate Threshold Voltage V

Static Drain-Source V
On-Resistance

Drain-Source On-Voltage V

On-State Drain Current V

Forward Transconductance V

Input Capacitance V

Output Capacitance 11 25 pF

Reverse Transfer Capacitance 4 5 pF

Turn-On Time V

Turn-Off Time

Maximum Continuous Drain-Source Diode Forward Current 200 mA

Maximum Pulsed Drain-Source Diode Forward Current 500 mA

Drain-Source Diode Forward Voltage V

Thermal Resistance, Junction to Ambient 312.5§C/W

Thermal Resistance, Junction to Case 40

25§C unless otherwise noted

C

e

0V, I

GS

DS

GS

DS

GS

GS

V

GS

GS

DS

DS

DD

R

G

GS

e

eb

e

e

e

e

e

e

e

e

e

e

48V, V

15V, V

VGS,I

10V, I

10V, I

4.5V, I

4.5V, V

10V, I

25V, V

15V, I

25X,R

0V, I

D

S

e

10 mA60 V

e

0V 1 mA

GS

e

T

125§C1mA

C

e

0V

DS

e

1 mA 0.8 2.1 3 V

D

e

0.5A 1.2 5 X

D

e

125§C 1.9 9 X

T

C

e

0.5A 0.6 2.5 V

D

e

75 mA 0.14 0.4 V

D

e

10V 75 600 mA

DS

e

200 mA 100 320 ms

D

e

0V, fe1.0 MHz 20 60 pF

GS

e

0.5V, V

D

e

25X

L

e

200 mA 1.5 V

e

10V, 10 ns

GS

b

10 nA

10 ns

C/W

§

2

2N7002

e

T

Electrical Characteristics

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

I

DSS

I

GSSF

I

GSSR

ON CHARACTERISTICS*

V

GS(th)

r

DS(ON)

V

DS(ON)

I

D(ON)

g

FS

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

SWITCHING CHARACTERISTICS*

t

ON

t

OFF

BODY-DRAIN DIODE RATINGS

I

S

I

SM

VSD* Drain-Source Diode Forward Voltage V

THERMAL CHARACTERISTICS

R

iJA

*Pulse Test: Pulse Widths300 ms, Duty Cycles2.0%.

Drain-Source Breakdown Voltage V

DSS

Zero Gate Voltage Drain Current V

Gate-Body Leakage, Forward V

Gate-Body Leakage, Reverse V

Gate Threshold Voltage V

Static Drain-Source V
On-Resistance

Drain-Source On-Voltage V

On-State Drain Current V

Forward Transconductance V

Input Capacitance V

Output Capacitance 11 25 pF

Reverse Transfer Capacitance 4 5 pF

Turn-On Time V

Turn-Off Time

Maximum Continuous Drain-Source Diode Forward Current 115 mA

Maximum Pulsed Drain-Source Diode Forward Current 800 mA

Thermal Resistance, Junction to Ambient 625§C/W

25§C unless otherwise noted

C

e

e

0V, I

GS

DS

GS

GS

DS

GS

V

GS

GS

V

GS

GS

DS

DS

DD

R

GEN

GS

D

e

60V, V

GS

e

20V 100 nA

eb

20V

e

VGS,I

D

e

10V, I

D

e

e

5V, I

D

e

10V, I

D

e

e

5V, I

D

e

10V, V

DS

t

2V

DS(ON),ID

e

25V, V

GS

e

30V, I

D

e

25X,R

e

e

0V, I

S

10 mA60V

e

0V 1 mA

e

T

125§C 500 mA

C

b

100 nA

e

250 mA 1 2.1 2.5 V

e

0.5A 1.2 7.5 X

e

T

125§C 2 13.5 X

C

50 mA 1.7 7.5 X

e

T

125§C 2.8 13.5 X

C

e

0.5A 0.6 3.75 V

50 mA 0.09 1.5 V

t

2V

DS(ON)

e

200 mA 80 320 ms

e

0V, fe1.0 MHz 20 50 pF

e

200 mA, V

e

L

150X

e

10V, 20 ns

GS

500 2700 mA

20 ns

115 mA 1.5 V

3

NDF7000A

e

T

Electrical Characteristics

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

I

DSS

I

GSSF

ON CHARACTERISTICS*

V

GS(th)

r

DS(ON)

V

DS(ON)

I

D(ON)

g

FS

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

SWITCHING CHARACTERISTICS*

t

on

t

off

BODY-DRAIN DIODE RATINGS

I

S

I

SM

VSD* Drain-Source Diode Forward Voltage V

THERMAL CHARACTERISTICS

R

iJA

*Pulse Test: Pulse Widths300 ms, Duty Cycles2.0%.

Drain-Source Breakdown Voltage V

DSS

Zero Gate Voltage Drain Current V

Gate-Body Leakage, Forward V

Gate Threshold Voltage V

Static Drain-Source V
On-Resistance

Drain-Source On-Voltage V

On-State Drain Current V

Forward Transconductance V

Input Capacitance V

Output Capacitance 11 25 pF

Reverse Transfer Capacitance 4 5 pF

Turn-On Time V

Turn-Off Time

Maximum Continuous Drain-Source Diode Forward Current 400 mA

Maximum Pulsed Drain-Source Diode Forward Current 2000 mA

Thermal Resistance, Junction to Ambient 200§C/W

25§C unless otherwise noted

C

e

0V, I

GS

DS

GS

DS

GS

GS

V

GS

GS

DS

DS

DD

R

G

GS

e

eb

e

e

e

e

e

t

e

e

e

e

48V, V

15V

VGS,I

10V, I

10V, I

4.5V, I

4.5V, V

2V

DS(ON),ID

25V, V

15V, I

25X,R

0V, I

D

S

e

10 mA60 V

e

0V 1 mA

GS

e

T

125§C1mA

C

b

10 nA

e

1 mA 0.8 2.1 3 V

D

e

0.5A 1.2 2 X

D

e

125§C 2 3.5 X

T

C

e

500 mA 0.6 1 V

D

e

75 mA 0.14 0.225 V

D

t

2V

DS

DS(ON)

e

200 mA 100 320 ms

e

0V, fe1.0 MHz 20 60 pF

GS

e

500 mA, V

D

e

25X

L

e

400 mA 0.88 1.2 V

GS

e

400 600 mA

10V, 10 ns

10 ns

4

NDS7002A

e

T

Electrical Characteristics

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

I

DSS

I

GSSF

I

GSSR

ON CHARACTERISTICS*

V

GS(th)

r

DS(ON)

V

DS(ON)

I

D(ON)

g

FS

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

SWITCHING CHARACTERISTICS*

t

ON

t

OFF

BODY-DRAIN DIODE RATINGS

I

S

I

SM

VSD* Drain-Source Diode Forward Voltage V

THERMAL CHARACTERISTICS

R

iJA

*Pulse Test: Pulse Widths300 ms, Duty Cycles2.0%.

Drain-Source Breakdown Voltage V

DSS

Zero Gate Voltage Drain Current V

Gate-Body Leakage, Forward V

Gate-Body Leakage, Reverse V

Gate Threshold Voltage V

Static Drain-Source V
On-Resistance

Drain-Source On-Voltage V

On-State Drain Current V

Forward Transconductance V

Input Capacitance V

Output Capacitance 11 25 pF

Reverse Transfer Capacitance 4 5 pF

Turn-On Time V

Turn-Off Time

Maximum Continuous Drain-Source Diode Forward Current 280 mA

Maximum Pulsed Drain-Source Diode Forward Current 1500 mA

Thermal Resistance, Junction to Ambient 417§C/W

25§C unless otherwise noted

C

e

e

0V, I

GS

DS

GS

GS

DS

GS

V

GS

GS

V

GS

GS

DS

DS

DD

R

G

GS

D

e

60V, V

GS

e

20V 100 nA

eb

20V

e

VGS,I

D

e

10V, I

D

e

e

5V, I

D

e

10V, I

D

e

5.0V, I

D

e

10V, V

DS

t

2V

DS(ON),ID

e

25V, V

GS

e

30V, I

25X,R

e

0V, I

D

L

e

S

e

10 mA60V

e

0V 1 mA

e

T

125§C 500 mA

C

b

100 nA

e

250 mA 1 2.1 2.5 V

e

0.5A 1.2 2 X

e

T

125§C 2 3.5 X

C

50 mA 1.7 3 X

e

T

125§C 2.8 5 X

C

e

500 mA 0.6 1 V

e

50 mA 0.09 0.15 V

t

2V

DS(ON)

e

200 mA 80 320 ms

e

0V, fe1.0 MHz 20 50 pF

e

200 mA, V

e

150X

e

10V, 20 ns

GS

500 2700 mA

20 ns

400 mA 0.88 1.2 V

5

Typical Electrical Characteristics

2N7000/2N7002/NDF7000A/NDS7002A

FIGURE 1. On-Region Characteristics

FIGURE 3. Transfer Characteristics

TL/G/11378– 4

TL/G/11378– 6

FIGURE 2. r

with Drain Current and Gate Voltage

DS(ON)

Variation

FIGURE 4. Breakdown Voltage

Variation with Temperature

TL/G/11378– 5

TL/G/11378– 7

FIGURE 5. Gate Threshold Variation with Temperature

TL/G/11378– 8

FIGURE 6. On-Resistance Variation with Temperature

TL/G/11378– 9

6

Typical Electrical Characteristics (Continued)

2N7000/2N7002/NDF7000A/NDS7002A (Continued)

TL/G/11378– 10

FIGURE 7. On-Resistance vs Drain Current

TL/G/11378– 12

FIGURE 9. Capacitance vs Drain-Source Voltage

FIGURE 8. Body Diode Forward Voltage

TL/G/11378– 11

Variation with Current and Temperature

TL/G/11378– 13

FIGURE 10. Gate Charge vs Gate-Source Voltage

FIGURE 11. 2N7000 Safe Operating Area

TL/G/11378– 14

FIGURE 12. 2N7002 Safe Operating Area

TL/G/11378– 15

7

Typical Electrical Characteristics (Continued)

2N7000/2N7002/NDF7000A/NDS7002A (Continued)

FIGURE 13. NDF7000A Safe Operating Area

TL/G/11378– 16

FIGURE 15. TO-92 Transient Thermal Response

FIGURE 14. NDS7002A Safe Operating Area

TL/G/11378– 17

TL/G/11378– 18

FIGURE 16. SOT-23 Transient Thermal Response

8

TL/G/11378– 19

Physical Dimensions inches (millimeters)

TO-92

TL/G/11378– 20

9

Physical Dimensions inches (millimeters) (Continued)

Note 1: Meets all JEDEC dimensional requirements for TO-236AB.

Note 2: Controlling dimension: millimeters.

Note 3: Available also in TO-236AA. Contact your local National Semiconductor representative for delivery and ordering information.

Note 4: Tape and reel is the standard packaging method for TO-236.

TL/G/11378– 21

TO-236AB (SOT-23) (Notes 3, 4)

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with instructions for use provided in the labeling, can effectiveness.
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2N7000/2N7002/NDF7000A/NDS7002A N-Channel Enhancement Mode Field Effect Transistor

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