Datasheet NDF0610 Datasheet (Fairchild Semiconductor)

April 1995

NDF0610 / NDS0610
P-Channel Enhancement Mode Field Effect Transistor

General Description Features

____________________________________________________________________________________________

NDF0610

Absolute Maximum Ratings T

A

= 25°C unless otherwise noted

Symbol Parameter NDF0610 NDS0610 Units

V

DSS

Drain-Source Voltage -60 V

V

DGR

Drain-Gate Voltage (RGS < 1 MΩ)

-60 V

V

GSS

Gate-Source Voltage - Continuous ±20 V

- Nonrepetitive (tP < 50 µs) ±30 V

I

D

Drain Current - Continuous -0.18 -0.12 A

- Pulsed -1

P

D

Maximum Power Dissipation TA = 25°C 0.8 0.36 W
Derate above 25°C 5 2.9 mW/oC

TJ,T

STG

Operating and Storage Temperature Range -55 to 150 °C

T

L

Maximum lead temperature for soldering
purposes, 1/16" from case for 10 seconds

300 °C

THERMAL CHARACTERISTICS

R

θ

JA

Thermal Resistance, Junction-to-Ambient 200 350 °C/W

NDS0610.SAM

These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process has been designed to minimize on-state resistance,
provide rugged and reliable performance and fast switching.
They can be used, with a minimum of effort, in most
applications requiring up to 180mA DC and can deliver
pulsed currents up to 1A. This product is particularly suited
to low voltage applications requiring a low current high side
switch.

-0.18 and -0.12A, -60V. R

DS(ON)

= 10Ω

Voltage controlled p-channel small signal switch
High density cell design for low R

DS(ON)

TO-92 and SOT-23 packages for both through hole and
surface mount applications

High saturation current

G

D

S

SOT-23

NDS0610

S

D

G

© 1998 Fairchild Semiconductor Corporation

S

G

D

TO-92

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = -10 µA -60 V

I

DSS

Zero Gate Voltage Drain Current VDS = -48 V, V

GS

= 0 V -1 µA

T

J

= 125°C -200 µA

I

GSSF

Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 10 nA

I

GSSR

Gate - Body Leakage, Reverse VGS = -20 V, VDS= 0 V -10 nA

ON CHARACTERISTICS (Note 1)

V

GS(th)

Gate Threshold Voltage V

DS

= V

GS

, I

D

= -1 mA -1 -2.4 -3.5 V

T

J

= 125°C -0.6 -2.1 -3.2

R

DS(ON)

Static Drain-Source On-Resistance VGS = -10 V, ID = -0.5 A 3.6 10

Ω

T

J

= 125°C 5.9 16

VGS = -4.5 V, ID = -0.25 A 5.2 20

T

J

= 125°C 7.9 30

I

D(on)

On-State Drain Current VGS = -10 V, VDS = -10 V -0.6 -1.6 A

VGS = -4.5 V, VDS = -10 V -0.35

g

FS

Forward Transconductance VDS = -10 V, ID = -0.1 A 70 170 mS

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

40 60 pF

C

oss

Output Capacitance 11 25 pF

C

rss

Reverse Transfer Capacitance 3.2 5 pF

SWITCHING CHARACTERISTICS (Note 1)

t

D(on)

Turn - On Delay Time VDD = -25 V, ID = -0.18 A,

VGS = -10 V, R

GEN

= 25 Ω

7 10 nS

t

r

Turn - On Rise Time 5 15 nS

t

D(off)

Turn - Off Delay Time 13 15 nS

t

f

Turn - Off Fall Time 10 20 nS

Q

g

Total Gate Charge VDS = -48 V,

ID = -0.5 A, VGS = -10 V

1.43 nC

Q

gs

Gate-Source Charge 0.6 nC

Q

gd

Gate-Drain Charge 0.25 nC

DRAIN-SOURCE DIODE CHARACTERISTICS

I

S

Maximum Continuous Source Current -0.18 A

I

SM

Maximum Pulse Source Current (Note 1) -1 A

V

SD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = -0.5 A

(Note 1)

-1.2 -1.5 V

TJ = 125°C -0.98 -1.3

t

rr

Reverse Recovery Time VGS = 0 V, IS = -0.5 A,

dIF/dt = 100 A/µs

40 ns

I

rr

Reverse Recovery Current 2.8 A

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

NDS0610.SAM

NDS0610.SAM

-10-8-6-4-20

-1.4

-1.2

-1

-0.8

-0.6

-0.4

-0.2

0

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

V = -10V

GS

DS

D

-8

-7

-6

-5

-4

-9

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

1.8

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

R , NORMALIZED

DS(ON)

I = -0.5A

V = -10V

D

GS

-50 -25 0 25 50 75 100 125 150

0.8

0.85

0.9

0.95

1

1.05

1.1

T , JUNCTION TEMPERATURE (°C)

GATE-SOURCE THRESHOLD VOLTAGE

J

V = V

I = -1mA

D

DS GS

V , NORMALIZED

th

-1.4-1.2-1-0.8-0.6-0.4-0.20

0.5

1

1.5

2

2.5

3

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

T = 125°C

J

-55

D

R , NORMALIZED

DS(on)

125

25

-55

V

-4.5V

-10V

GS

25

Typical Electrical Characteristics

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

Figure 3. On-Resistance Variation

with Temperature

Figure 4. On-Resistance Variation with Drain

Current and Temperature

Figure 5. Transfer Characteristics

Figure 6. Gate Threshold Variation with

Temperature

-10-8-6-4-20

-1.2

-1

-0.8

-0.6

-0.4

-0.2

0

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25

125

V = -10V

DS

GS

D

T = -55°C

J

-1.4-1.2-1-0.8-0.6-0.4-0.20

0.8

1

1.2

1.4

1.6

1.8

2

2.2

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = -4V

GS

D

R , NORMALIZED

DS(on)

-5

-7

-8

-9

-10

-6

NDS0610.SAM

-50 -25 0 25 50 75 100 125 150

0.9

0.95

1

1.05

1.1

1.15

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE (V)

I = -10µA

D

BV , NORMALIZED

DSS

J

0.6 0.8 1 1.2 1.4 1.6 1.8

0.1

0.2

0.3

0.5

1

1.5

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

V = 0V

GS

T = 125°C

J

25

-55

SD

S

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

-10

-8

-6

-4

-2

0

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

g

GS

-48

V = -12V

DS

I = -0.5A

D

-24

0.1 0.2 0.5 1 2 5 10 20 30 60

2

3

5

10

20

30

50

70

-V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz
V = 0V

GS

C

oss

C

rss

-1.4-1.2-1-0.8-0.6-0.4-0.20

0

0.1

0.2

0.3

0.4

I , DRAIN CURRENT (A)

g , TRANSCONDUCTANCE (SIEMENS)

T = -55°C

J

25

D

FS

V = -10V

DS

125

Figure 7. Breakdown Voltage Variation with

Temperature

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

Figure 11. Transconductance Variation with Drain

Current and Temperature

Typical Electrical Characteristics (continued)

NDS0610.SAM

1 2 5 10 20 30 60 80

0.005

0.01

0.05

0.1

0.5

1

2

3

- V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

DS

D

V = -10V

SINGLE PULSE

T = 25°C

GS

A

RDS(ON) Limit

100ms

1ms

10ms

DC

1s

100us

10s

1 2 5 10 20 30 60 80

0.005

0.01

0.05

0.1

0.5

1

2

3

- V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

DS

D

V = -10V

SINGLE PULSE

T = 25°C

GS

A

RDS(ON) Limit

100ms

1ms

10ms

DC

1s

100us

10s

Figure 12. NDF0610 (TO-92)

Maximum Safe Operating Area

Figure 13. NDS0610 (SOT-23) Maximum Safe

Operating Area

Typical Electrical Characteristics (continued)

0.0001 0.001 0.01 0.1 1 10 100 300

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 200 C/W

Datasheet)

θ

JA

θ

JA

θ

JA

T - T = P * R (t)

θ

JA

A

J

P(pk)

t

1

t

2

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

o

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.01

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 350 C/W

θ

JA

θ

JA

θ

JA

T - T = P * R (t)

θ

JA

A

J

P(pk)

t

1

t

2

o

Figure 14. NDF0610 (TO-92) Transient Thermal

Response Curve.

Figure 15. NDS0610 (SOT-23) Transient Thermal

Response Curve.

TO-92 Tape and Reel Data and Package Dimensions

September 1999, Rev. B

TO-92 Packaging
Configuration: Figure 1.0

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

2000 units per
EO70 box for

std option

FSCINT Label

530mm x 130mm x 83mm

Intermediate box

10,000 units maximum

per intermediate box

for std option

FSCINT Label

114mm x 102mm x 51mm

Immediate Box

Anti-static

Bubble Sheets

(TO-92) BULK PACKING INFORMATION

EOL

CODE

DESCRIPTION

LEADCLIP

DIMENSION

QUANTITY

J18Z

TO-18 OPTION STD NO LEAD CLIP

2.0 K / BOX

J05Z

TO-5 OPTION STD NO LEAD CLIP

1.5 K / BOX

NO EOL

CODE

TO-92 STANDARD
STRAIGHT

NO LEADCLIP

2.0 K / BOX

BULK OPTION

See Bulk Packing
Information table

375mm x 267mm x 375mm

Intermediate Box

FSCINT
Label

Customized
Label

333mm x 231mm x 183mm

Intermediate Box

FSCINT
Label

Customized
Label

TO-92 TNR/AMMO PACKING INFROMATION

Packing Style Quantity EOL cod e

Reel A 2,000 D26Z

E2,000 D27Z

Ammo M 2,000 D74Z

P2,000 D75Z

Unit w eight = 0.22 gm
Reel weight with com ponents = 1.04 kg
Amm o weight with compo n ents = 1.02 kg
Max q uantity p er intermediate bo x = 10,000 units

F63TNR
Label

5 Ammo boxes per

Intermediate Box

Customized
Label

327mm x 158mm x 135mm

Immediate Box

LOT:

CBVK741B019

NSID:

PN2222N

D/C1:

D9842

SPEC REV:

B2

SPEC:

QTY:

10000

QA REV:

FAIRCHILD SEMICONDUCTOR CORPORATION

HTB:B

(FSCINT)

F63TNR
Label

Customized
Label

5 Reels per

Intermediate Box

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

LOT: CBVK741B019

FSID: PN222N

D/C1: D9842 QTY1: SPEC REV:

SPEC:

QTY: 2000

D/C2: QTY2: CPN:

N/F: F (F63TNR)3

F63TNR Label sample

FSCINT Label sample

C

5 EO70 boxes per
intermediate Box

ustomized

Label

TO-92 Tape and Reel Data and Package Dimensions, continued

September 1999, Rev. B

TO-92 Reeling Style
Configuration: Figure 2.0

Style “A”, D26Z, D70Z (s/h )

Machine Option “A” (H)

Style “E”, D27 Z, D71 Z (s/ h)

Machine Option “E” (J)

FIRST WIRE OFF IS EMITTER
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON BOTTOM

ORDER STYLE

D75Z (P)

FIRST WIRE OFF IS COLLECTOR
ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP

ORDER STYLE

D74Z (M)

TO-92 Radial Ammo Packaging
Configuration: Figure 3.0

FIRST WIRE OFF IS EMITTER (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM

FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON TOP

ITEM DESCRIPTION

Base of Package to Lead Bend
Compon en t He ig ht
Lead Clinch Height
Component Base Height
Component Alignment ( side/side )
Component Alignment ( front/back )
Compon en t Pit c h
Feed Hole Pitch
Hole Center to First Lead
Hole Center to Component Center
Lead Spread
Lead Thickness
Cut Lead Length
Taped Lead Length
Taped Lead Thickness
Carrier Tape Thickness
Carrier Tape Width
Hold - down Tape Width
Hold - down Tape position
Feed Hole Position
Sprocket Hole Diameter
Lead Spring Out

SYMBOL

b
Ha
HO
H1
Pd
Hd
P
PO
P1
P2
F1/F2
d
L
L1
t
t1
W
WO
W1
W2
DO
S

DIMENSION

0.098 (m ax )

0.928 (+/ - 0. 025)

0.630 (+/ - 0. 020)

0.748 (+/ - 0. 020)

0.040 (m ax )

0.031 (m ax )

0.500 (+/ - 0. 020)

0.500 (+/ - 0. 008)

0.150 (+0.009, -0.010)

0.247 (+/ - 0. 007)

0.104 (+/ - 0 .01 0)

0.018 (+0.002, -0.003)

0.429 (m ax )

0.209 (+0.051, -0.052)

0.032 (+/ - 0. 006)

0.021 (+/ - 0. 006)

0.708 (+0.020, -0.019)

0.236 (+/ - 0. 012)

0.035 (m ax )

0.360 (+/ - 0. 025)

0.157 (+0.008, -0.007)

0.004 (m ax )

Note : All dimensions are in inches.

ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM

Reel Diame ter D1 13.9 75 14.02 5
Arbor Hol e Diam eter (Stand ard) D2 1.160 1.200

(Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0.570
Flange to Flange Inner Width W2 1.630 1.690
Hub to Hub Center Width W3 2.090

Note: All dime ns ions are inch es

TO-92 Tape and Reel Taping
Dimension Configuration: Figure 4.0

Ha

H1

HO

PO

P2

P1 F1

DO

P Pd

b

d

L1

L

S

WO

W2

W

t

t1

Hd

W1

TO-92 Reel
Configuration: Figure 5.0

User Direction of Feed

SENSITIV E DEVICES

ELECTROSTAT I C

D1

D3

Customized Label

W2

W1

W3

F63TNR Label

D4

D2

TO-92 Tape and Reel Data and Package Dimensions, continued

July 1999, Rev. A

TO-92 (FS PKG Code 92, 94, 96)

TO-92 T ape and Reel Data and Package Dimensions

January 2000, Rev. B

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.1977

SOT-23 Packaging
Configuration: Figure 1.0

Components

Leader Tape
500mm minimum or

125 empty pockets

Trailer Tape
300mm minimum or

75 empty pockets

SOT-23 Tape Leader and Trailer

Configuration: Figure 2.0

Cover Tape

Carrier Tape

Note/Comments

Packaging Option

SOT-23 Packaging Information

Stan dard

(no flow code)

D87Z

Packaging type

Reel Size

TNR

7" Dia

TNR

13"

Qty per Reel/Tube/Bag

3,000 10,000

Box Dimensi on (mm)

187x107x183 343x343x64

Max qty per B ox

24,000 30,000

Weight per unit (gm)

0.0082 0.0082

Weight per Reel (kg)

0.1175 0.4006

Human readable
Label

Human Readable Label

Human Readable Label sampl e

343mm x 342mm x 64mm

Intermediate box for L87Z Option

187mm x 107mm x 183mm

Intermediate Box for Standard Option

SOT-23 Unit Orientation

3P 3P 3P 3P

Human Readable

Label

Customized Label

Embossed

Carrier Tape

Antistatic Cover Tape

Packaging Description:

SOT-23
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a mul tilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti­static coated). Other option comes in 10,000 units per 13"
or 330cm diameter r eel. This and some other options are
described in the Packaging Information table.

These full reels are individually labeled and placed insi de
a standard intermediate made of recyclable corrugated
brown paper with a Fairchild logo printi ng. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed insi de a labeled ship ping box which
comes in diff erent sizes depending on the number of parts
shipped.

parts are shipped in tape. The carrier tape is

SOT-23 Tape and Reel Data and Package Dimensions

September 1999, Rev. C

Dimensions are in millimeter

Pkg type

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

SOT-23

(8mm)

3.15
+/-0.10

2.77
+/-0.10

8.0
+/-0.3

1.55
+/-0.05

1.125
+/-0.125

1.75
+/-0.10

6.25
min

3.50
+/-0.05

4.0
+/-0.1

4.0
+/-0.1

1.30
+/-0.10

0.228
+/-0.013

5.2
+/-0.3

0.06
+/-0.02

Dimensions are in inches and millimeters

Tape Size

Reel

Option

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

8mm 7" Dia

7.00

177.8

0.059

1.5

512 +0.020/-0.008
13 +0.5/-0.2

0.795

20.2

2.165550.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.311 – 0.429

7.9 – 10.9

8mm 13 " Dia

13.00
330

0.059

1.5

512 +0.020/-0.008
13 +0.5/-0.2

0.795

20.2

4.00
100

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.311 – 0.429

7.9 – 10.9

See detail AA

Dim A

max

13" Diameter Option

7"

Diameter Option

Dim A

Max

See detail AA

W3

W2 max Measured at Hub

W1 Measured at Hub

Dim N

Dim D

min

Dim C

B Min

DETAIL AA

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

20 deg maximum component rotation

0.5mm
maximum

0.5mm
maximum

Sketch C (Top View)

Component lateral movement

Typical
component
cavity
center line

20 deg maximum

Typical
component
center line

B0

A0

Sketch B (Top View)

Component Rotation

Sketch A (Side or Front Sectional View)

Component Rotation

User Direction of Feed

SOT-23 Embossed Carrier Tape
Configuration: Figure 3.0

SOT-23 Reel Configuration: Figure 4.0

P1

A0

D1

F

W

E1

E2

Tc

Wc

K0

T

B0

D0P0 P2

SOT-23 Tape and Reel Data and Package Dimensions, continued

September 1999, Rev. C

SOT-23 (FS PKG Code 49)

SOT-23 Tape and Reel Data and Package Dimensions, continued

September 1998, Rev. A1

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0082

TRADEMARKS

ACEx™
CoolFET™
CROSSVOL T™
E

2

CMOS

TM

FACT™
FACT Quiet Series™

FAST

®

FASTr™
GTO™
HiSeC™

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Formative or
In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.

SyncFET™
TinyLogic™
UHC™
VCX™

ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™

Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8



Rev. D