Page 1
May 1994
NDP708A / NDP708AE / NDP708B / NDP708BE
NDB708A / NDB708AE / NDB708B / NDB708BE
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been especially
tailored to minimize on-state resistance, provide
superior switching performance, and withstand high
energy pulses in the avalanche and commutation
modes. These devices are particularly suited for low
voltage applications such as automotive, DC/DC
converters, PWM motor controls, and other battery
powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
_____________________________________________________________________
60 and 54A, 80V. R
= 0.022 and 0.025Ω.
DS(ON)
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate
the need for an external Zener diode transient
suppressor.
175°C maximum junction temperature rating.
High density cell design (3 million/in²) for extremely
low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both
through hole and surface mount applications.
D
Absolute Maximum Ratings T
Symbol Parameter
V
V
V
I
P
TJ,T
T
DSS
DGR
GSS
D
D
L
Drain-Source Voltage 80 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous ±20 V
- Nonrepetitive (tP < 50 µs)
Drain Current - Continuous 60 54 A
- Pulsed 180 162 A
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range -65 to 175 °C
STG
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
= 25°C unless otherwise noted
C
NDP708A NDP708AE
NDB708A NDB708AE
G
S
NDP708B NDP708BE
NDB708B NDB708BE Units
80 V
±40 V
150 W
1
W/°C
275 °C
© 1997 Fairchild Semiconductor Corporation
NDP708.SAM
Page 2
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Type Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
E
AS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche Current 60 A
VDD = 25 V, ID = 60 A NDP708AE
NDP708BE
NDB708AE
NDB708BE
600 mJ
OFF CHARACTERISTICS
BV
Drain-Source Breakdown
DSS
VGS = 0 V, ID = 250 µA ALL 80 V
Voltage
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain
Current
VDS = 80 V,
V
= 0 V
GS
TJ = 125°C
ALL 250 µA
1 mA
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V ALL 100 nA
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
ALL -100 nA
ON CHARACTERISTICS (Note 2)
V
R
GS(th)
DS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS,
ID = 250 µA
VGS = 10 V,
ID = 30 A
TJ = 125°C
ALL 2 2.6 4 V
1.4 1.9 3.6 V
NDP708A
0.016 0.022
NDP708AE
NDB708A
0.025 0.04
0.25
VGS = 10 V,
ID = 27 A
TJ = 125°C
NDB708AE
NDP708B
NDP708BE
NDB708B
0.044
I
D(on)
TJ = 125°C
NDB708BE
On-State Drain Current VGS = 10 V, VDS = 10 V NDP708A
60 A
NDP708AE
NDB708A
NDB708AE
NDP708B
54 A
NDP708BE
NDB708B
NDB708BE
g
FS
Forward Transconductance VDS = 10 V, ID = 30 A ALL 16 33 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance ALL 780 1000 pF
f = 1.0 MHz
Reverse Transfer Capacitance ALL 285 400 pF
ALL 2800 3600 pF
Ω
Ω
Ω
Ω
NDP708.SAM
Page 3
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Type Min Typ Max Units
SWITCHING CHARACTERISTICS (Note 2)
t
D(ON)
t
r
t
D(OFF)
t
f
Q
Q
Q
g
gs
gd
Turn - On Delay Time VDD = 40 V, ID = 60 A,
Turn - On Rise Time ALL 143 230 nS
VGS = 10 V, R
GEN
= 5 Ω
ALL 15 25 nS
Turn - Off Delay Time ALL 58 90 nS
Turn - Off Fall Time ALL 108 180 nS
Total Gate Charge VDS = 64 V,
Gate-Source Charge ALL 16 nC
ID = 60 A, VGS = 10 V
ALL 94 130 nC
Gate-Drain Charge ALL 51 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
Maximum Continuos Drain-Source Diode Forward Current NDP708A
60 A
NDP708AE
NDB708A
NDB708AE
NDP708B
54 A
NDP708BE
NDB708B
NDB708BE
ISM Maximum Pulsed Drain-Source Diode Forward Current NDP708A
180 A
NDP708AE
NDB708A
NDB708AE
NDP708B
162 A
NDP708BE
NDB708B
NDB708BE
V
SD
(Note 2)
t
rr
I
rr
Drain-Source Diode Forward
Voltage
Reverse Recovery Time VGS = 0 V, IS = 60 A,
Reverse Recovery Current ALL 6.5 10 A
VGS = 0 V,
IS = 30 A
dIS/dt = 100 A/µs
ALL 0.91 1.3 V
TJ = 125°C 0.82 1.2 V
ALL 98 140 ns
THERMAL CHARACTERISTICS
R
JC
θ
R
JA
θ
Notes:
1. NDP708A/708B and NDB708A/708B are not rated for operation in avalanche mode.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Thermal Resistance, Junction-to-Case ALL 1
Thermal Resistance, Junction-to-Ambient ALL 62.5
°C/W
°C/W
NDP708.SAM
Page 4
Typical Electrical Characteristics
120
100
80
60
40
20
D
I , DRAIN-SOURCE CURRENT (A)
V = 20V
GS
10
8.0
7.0
6.0
5.0
4.0
0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
DS
2
V = 5V
1.8
1.6
1.4
1.2
1
R , NORMALIZEDDS(on)
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
GS
6.0
7.0
0 20 40 60 80 100 120
I , DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Gate Voltage and Drain Current.
2.4
I = 30A
D
V = 10V
GS
2
1.6
1.2
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.4
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
2
V = 10V
1.8
1.6
1.4
1.2
1
DS(on)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
GS
T = 125°C
J
25°C
-55°C
0 20 40 60 80 100
I , DRAIN CURRENT (A)
D
8.0
10
20
Figure 3. On-Resistance Variation
with Temperature.
60
V = 10V
50
40
30
20
D
I , DRAIN CURRENT (A)
10
0
DS
2 3 4 5 6 7
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
J
25
125
Figure 4. On-Resistance Variation with
Drain Current and Temperature.
1.2
1.1
1
0.9
0.8
th
V , NORMALIZED
0.7
0.6
GATE-SOURCE THRESHOLD VOLTAGE (V)
0.5
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation
with Temperature.
V = V
DS GS
I = 250µA
D
NDP708.SAM
Page 5
Pulse Width
Typical Electrical Characteristics (continued)
1.15
I = 250µA
D
1.1
1.05
1
DSS
BV , NORMALIZED
0.95
0.9
DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
J
Figure 7. Breakdown Voltage
Variation with Temperature.
5000
3000
2000
1000
500
CAPACITANCE (pF)
100
f = 1 MHz
V = 0V
GS
1 2 3 5 10 20 30 50
V , DRAIN TO SOURCE VOLTAGE (V)
DS
C
C
C
iss
oss
rss
100
V = 0V
50
GS
10
2
1
0.1
S
I , REVERSE DRAIN CURRENT (A)
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4
T = 125°C
J
25°C
-55°C
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 8. Body Diode Forward Voltage
Variation with Current and
Temperature.
20
I = 60A
D
15
10
5
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 40 80 120 160
Q , GATE CHARGE (nC)
g
V = 12V
DS
24
64
Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.
in
10%
out
t
on
10%
50%
r
t
90%
t
d(off)
V
DD
t
d(on)
V
IN
V
GS
R
GEN
G
R
L
D
V
OUT
DUT
Input, V
S
50%
90%
t
off
90%
10%
Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms.
t
f
Inverted
NDP708.SAM
Page 6
Typical Electrical Characteristics (continued)
50
40
30
20
10
FS
g , TRANSCONDUCTANCE (SIEMENS)
0
0 10 20 30 40 50 60
I , DRAIN CURRENT (A)
D
T = -55°C
J
25°C
125°C
V = 10V
DS
Figure 13. Transconductance Variation
with Drain Current and Temperature.
300
200
RDS(ON) Limit
100
20
10
5
V = 20V
D
I , DRAIN CURRENT (A)
2
1
0.5
GS
SINGLE PULSE
T = 25°C
C
1 2 3 5 10 20 30 80 150
V , DRAIN-SOURCE VOLTAGE (V))
DS
10ms
100ms
DC
10µs
100µs
1ms
V = 10V
GS
t is adjusted to reach
p
t
p
L
the desired peak inductive
current, I .
L
t
p
I
L
BV
DSS
Figure 14. Unclamped Inductive Load
Circuit and Waveforms.
+
V
DD
-
V
DD
Figure 15. Maximum Safe Operating Area.
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
t ,TIME (ms)
1
R (t) = r(t) * R
JC
θ
R = 1.0 °C/W
JC
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
C
Duty Cycle, D = t /t
Figure 16. Transient Thermal Response Curve.
θ
θ
JC
1 2
JC
NDP708.SAM
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