Datasheet NDP7051, NDB7051 Datasheet (Fairchild Semiconductor)

NDP7051 / NDB7051

N-Channel Enhancement Mode Field Effect Transistor

General Description Features

August 1996

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy
pulses in the avalanche and commutation modes. These
devices are particularly suited for low voltage applications such
as automotive, DC/DC converters, PWM motor controls, and
other battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.

70A, 50V. R

= 0.013Ω @ VGS=10V.

DS(ON)

Critical DC electrical parameters specified at elevated
temperature.

Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.

175°C maximum junction temperature rating.
High density cell design for extremely low R

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.

________________________________________________________________________________

D

G

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter NDP7051 NDB7051 Units

V

DSS

V

DGR

V

GSS

Drain-Source Voltage 50 V
Drain-Gate Voltage (RGS < 1 MΩ)

50 V

Gate-Source Voltage - Continuous ± 20 V

- Nonrepetitive (tP < 50 µs) ± 40

I

D

Drain Current - Continuous 70 A

- Pulsed 210

P

D

Maximum Power Dissipation @ TC = 25°C

130 W

Derate above 25°C 0.87 W/°C
TJ,T
T

L

Operating and Storage Temperature Range -65 to 175 °C

STG

Maximum lead temperature for soldering purposes,

275 °C

1/8" from case for 5 seconds

© 1997 Fairchild Semiconductor Corporation

NDP7051 Rev. D

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units

W

I

AR

Single Pulse Drain-Source Avalanche

DSS

Energy

VDD = 25 V, ID = 70 A 500 mJ

Maximum Drain-Source Avalanche Current 70 A

OFF CHARACTERISTICS

BV
I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current VDS = 40 V, V

VGS = 0 V, ID = 250 µA

= 0 V 10 µA

GS

TJ = 125°C
Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate - Body Leakage, Reverse

VGS = -20 V, VDS = 0 V

50 V

1 mA

-100 nA

ON CHARACTERISTICS (Note 1)

V

GS(th)

Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 2.9 4 V

TJ = 125°C 1.4 2.2 3.6

R

I
g

DS(ON)

D(on)

FS

Static Drain-Source On-Resistance

VGS = 10 V, ID = 35 A

TJ = 125°C
On-State Drain Current VGS = 10 V, VDS = 10 V 60 A
Forward Transconductance

VDS = 10 V, ID = 35 A

0.011 0.013

0.018 0.023

30 S

Ω

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance 870 pF

f = 1.0 MHz

Reverse Transfer Capacitance 310 pF

1930 pF

SWITCHING CHARACTERISTICS (Note 1)

t
t

t
t

Q
Q
Q

D(on)

r

D(off)

f

Turn - On Delay Time
Turn - On Rise Time 98 200 nS

VDD = 25 V, ID = 70 A,
VGS = 10 V, R

GEN

= 5 Ω

Turn - Off Delay Time 36 80 nS
Turn - Off Fall Time 65 150 nS

g

gs

gd

Total Gate Charge VDS = 48 V,
Gate-Source Charge 11 nC

ID = 70 A, VGS = 10 V

Gate-Drain Charge 38 nC

13 30 nS

67 100 nC

NDP7051 Rev. D

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE DIODE CHARACTERISTICS

I
ISM
V

t
I

S

SD

rr

rr

Maximum Continuos Drain-Source Diode Forward Current 70 A
Maximum Pulsed Drain-Source Diode Forward Current 210 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 35 A (Note 1) 0.9 1.3 V

0.8 1.2

40 105 150 ns

Reverse Recovery Time

TJ = 125°C

VGS = 0 V, IF = 70 A, dIF/dt = 100 A/µs

Reverse Recovery Current 2 4.5 10 A

THERMAL CHARACTERISTICS

R

θ

R

θ

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Thermal Resistance, Junction-to-Case 1.15 °C/W

JC

Thermal Resistance, Junction-to-Ambient 62.5 °C/W

JA

NDP7051 Rev. D

V , NORMALIZED

R , NORMALIZED

Typical Electrical Characteristics

100

V =20V

GS

12

10

8.0

80

60

7.0

6.0

40

20

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4

V , DRAIN-SOURCE VOLTAGE (V)

DS

5.0

Figure 1. On-Region Characteristics.

2

I = 35A

D

V = 10V

1.75

1.25

DS(ON)

R , NORMALIZED

0.75

DRAIN-SOURCE ON-RESISTANCE

GS

1.5

1

0.5

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)

J

4.5

3

V = 5.0V

GS

2.5

6.0

2

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5
0 20 40 60 80 100

I , DRAIN CURRENT (A)

D

7.0

8.0

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

2

V =10V

GS

1.75

1.5

1.25

1

DS(on)

0.75

DRAIN-SOURCE ON-RESISTANCE

0.5
0 20 40 60 80 100

T = 125°C

J

25°C

-55°C

I , DRAIN CURRENT (A)

D

10

12

20

Figure 3. On-Resistance Variation

with Temperature.

60

V = 10V

DS

50

40

30

20

D

I , DRAIN CURRENT (A)

10

0

2 3 4 5 6 7

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

Figure 5. Transfer Characteristics.

125°C

25°C

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.4

V = V

1.2

1

0.8

GS(th)

0.6

GATE-SOURCE THRESHOLD VOLTAGE

0.4

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)

J

DS

I = 250µA

D

Figure 6. Gate Threshold Variation with

Temperature.

GS

NDP7051 Rev. D

BV , NORMALIZED

Typical Electrical Characteristics (continued)

1.15

I = 250µA

D

1.1

1.05

1

DSS

0.95

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.9

-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Breakdown Voltage Variation with

Temperature.

5000
4000

3000

2000

1000

CAPACITANCE (pF)

500

300

200

f = 1 MHz
V = 0V

GS

0.1 0.2 0.5 1 2 5 10 20 50
V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

C

100

50

V = 0V

GS

10

1

0.1

0.01

S

I , REVERSE DRAIN CURRENT (A)

0.001

0.2 0.3 0.5 1 2

T = 125°C

J

V , BODY DIODE FORWARD VOLTAGE (V)

SD

25°C

-55°C

Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

20

I = 70A

D

iss

oss

C

rss

15

10

5

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 20 40 60 80 100 120

Q , GATE CHARGE (nC)

g

V = 12V

DS

24V

48V

Figure 9. Capacitance Characteristics.

V

DD

V

IN

D

V

GS

R

GEN

G

S

Figure 11. Switching Test Circuit.

Figure 10. Gate Charge Characteristics.

t t

on off

t

V

d(on)

OUT

R

L

V

OUT

DUT

r

90%

10%

t

d(off)

90%

10%

tt

f

INVERTED

90%

V

IN

50%

50%

10%

PULSE WIDTH

Figure 12. Switching Waveforms.

NDP7051 Rev. D

Typical Electrical Characteristics (continued)

50

V = 10V

DS

40

30

20

10

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

0 10 20 30 40 50

I , DRAIN CURRENT (A)

D

T = -55°C

J

25°C

125°C

Figure 13. Transconductance Variation with Drain

300
200

DS(ON)

R Limit

100

50

20

10

5

D

I , DRAIN CURRENT (A)

2

1

0.5

V = 10V

GS

SINGLE PULSE

R = 1.15 C/W

1 2 3 5 10 20 50 80

o

θJC

T = 25°C

C

V , DRAIN-SOURCE VOLTAGE (V)

DS

50ms

DC

1ms

10ms

10us

100us

500us

Figure 14. Maximum Safe Operating Area.

Current and Temperature.

1

D = 0.5

0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.05

0.03

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.02

0.01

0.02

0.01
Single Pulse

0.01 0.05 0.1 0.5 1 5 10 50 100 1000 10000
t ,TIME (ms)

1

R (t) = r(t) * R

R = 1.15 °C/W

θJC

P(pk)

t

1

t

2

T - T = P * R (t)

J

C

Duty Cycle, D = t / t

θJC

1 2

θJCθJC

Figure 15. Transient Thermal Response Curve.

NDP7051 Rev. D

TO-220 Tape and Reel Data and Package Dimensions

TO-220 Tube Packing
Configuration: Figure 1. 0

45 units per Tube

12 Tubes per Bag

530mm x 130mm x 83mm

2 bags per Box

Conduct ive Plastic Bag

Intermediate box

Packaging Description:

TO-220 parts are shipped nor mally in t ube. The tube is
made of PVC plas tic treated wi th anti -stati c agent .These
tubes in s tandard opt ion are placed in side a di ssipativ e
plastic bag, barcode labeled, and placed inside a box
made of r ecy cl able cor rug ate d pape r. On e bo x c ont ain s
tw o ba gs m ax im um (se e fi g. 1. 0). A nd on e or se ver al o f
these boxes are placed in side a labeled shipp ing box
wh ic h c o m es in d i f fer en t s i zes de pe ndi ng o n th e nu m b er
of parts shipped. The ot her option co mes in bulk as
described in the Packagin g In fo rm atio n tab le. The un its in
this op tion ar e placed inside a s mall box laid w ith anti­static bu bble sheet. These smaller box es are indiv idually
labeled and plac ed inside a lar ger box (see fig. 3.0).
These larger or int ermediate boxes then w ill be placed
finally ins ide a labeled ship ping box whic h st ill co mes in
diff erent sizes depending on the number of units shipped.

TO-220 Packaging
Information: Figure 2.0

TO-220 Packaging Information

Packaging Option
Packaging type

Qty per Tube/Box
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)

Note/Comments

Stan dard

(no fl ow code )

Rail/Tube

45

530x130x83

1,080

1.4378

S62Z

BULK

114x102x51

1,500

1.4378

TO-220 bulk Packing
Configuration: Figure 3.0

FSCINT Label

300 units per

EO70 box

114mm x 102mm x 51mm

TO-220 Tube
Configuration: Figure 4.0

Note: All dim ensions are in inches

9852

9852

F

NDP4060L

F

NDP4060L

F

NDP4060L

300

EO70 Immediate Box

9852

9852

F

NDP4060L

9852

F

NDP4060L

9852

F

NDP4060L

Anti-static

Bubbl e Sheets

5 EO70 boxes per per

Interme di ate Box

9852

9852

F

NDP4060L

F

NDP4060L

20.000
+0.031

-0.065

F

NDP4060L

1080 units maximum

quantity per box

FSCINT Label

0.123
+0.001

-0.003

9852

9852

F

NDP4060L

9852

F

NDP4060L

FSCINT Label sample

530mm x 130mm x 83mm

Intermediate box

FSCINT Label

0.450

9852

F

NDP4060L

±.030

0.800

FAIRCHILD SEMICONDUCTOR CORPORAT ION

LOT:

CBVK741B019

NSID:

FDP7060

D/C1:

SPEC REV:

D9842

1500 units maximum

quantity per intermediate box

0.165

0.080

0.275

1.300
±.015

0.032
±.003

0.275

QA REV:

0.160

HTB:B

QTY:

1080

SPEC:

B2

(FSCINT)

August 1999, Rev. B

TO-220 Tape and Reel Data and Package Dimensions, continued

TO-220 (FS PKG Code 37)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 1.4378

September 1998, Rev. A

TO-263AB/D2PAK Tape and Reel Data and Package
Dimensions

TO-263AB/D2PAK Packaging
Configuration: Figure 1.0

ELECTROSTATIC

SENSITIVE DEVICES

DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE
PT NUMBER
PEEL STRENGTH MIN ______________gms

Customized
Label

MAX _____________ gms

ESD Label

Moisture Sensitive

Antistatic Cover Tape

CAUTION

Label

F63TNR
Label

Static Dissipative

Embossed Car rier Tape

FDB603AL

F

9835

Packaging Description:

TO-263/D2PAK parts are shipped in tape. The carrier tape
is made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
800 unit s per 13" or 330cm di ameter reel. Th e reels are
dark blue in color and is made of polystyrene plastic (anti­static coated). This and some other options are further
described in the Packaging Information table.

These full reels are individually barcode labeled, dry
packed, and placed inside a standard intermediate box
(illus trated in fi gure 1.0) ma de of recycla ble corru gated
brown paper. One box contains one reel maximum. And
these boxes are placed inside a barcode labeled shipping
box which comes in different sizes depending on the
number of parts shipped.

FDB603AL

F

9835

FDB603AL

F

9835

FDB603AL

F

9835

TO-263AB/D2PAK Packaging Information

Packaging Option
Packaging type

Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel

Note/Comments

Standard

(no flow code)

TNR

13" Dia

359x359x57 530x130x83

1.4378 1.4378

1.6050 -

L86Z

Rail/Tube

800 45

800 1,080

-

F63TNR Label sample

LOT: CBVK741B019

FSID: FDB6320L

D/C1: D9842 QTY1: SPEC REV:
D/C2: QTY2: CPN:

QTY: 800

SPEC:

N/F: F (F63TNR)3

TO-263AB/D2PAK Tape Leader and Trailer
Configuration: Figure 2.0

TO-263AB/D2PAK Unit Orientation

359mm x 359mm x 57mm

Stand a r d In t e rm ed iate box

ESD Label

Moisture Sensitive

Label

F63TNR Label

DRYPACK Bag

Carrier Tape

Cover Tape

Trailer Tape
400mm minimum or
25 empty pockets

Components

Leader Tape
1520mm minimum or
95 empty pockets

September 1999, Rev. B

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

TO-263AB/D2PAK Embossed Carrier Tape
Configuration: Figure 3.0

T

K0

Wc

Tc

B0

A0

P0

D0

P1

User Direction of Feed

Dimensions are in millimeter

E1

F

W

E2

D1

Pkg ty pe

T

O263AB/

2

D

PAK

(24mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

TO-263AB/D

A0 B0 W D0 D1 E 1 E2 F P1 P0 K0 T Wc T c

10.60

15.80

24.0

1.55

1.60

1.75

22.25

+/-0.10

+/-0.10

+/-0.3

+/-0.05

10 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

2

PAK Reel Configuration:

+/-0.10

+/-0.10

B0

Sketch B (Top View)

Component Rotation

min

11.50
+/-0.10

10 deg maximum

A0

Figure 4.0

W1 Measured at Hub

Dim A

max

Dim N

16.0
+/-0.1

Typical
component
cavity
center line

Typical
component
center line

Dim A

Max

Dim D

min

4.0
+/-0.1

4.90

0.450
+/-0.150

21.0
+/-0.3

0.9mm
maximum

+/-0.10

0.9mm
maximum

Sketch C (Top View)

Component lateral movement

B Min

Dim C

0.06
+/-0.02

Tape Size

24mm 13" Dia

Reel

Option

DETAIL AA

13" Diameter Option

See detail AA

W2 max Measured at Hub

W3

Dimensions are in inches and millimeters

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

13.00

0.059

1.5

512 +0.020/ -0.008
13 +0.5/-0.2

330

0.795

20.2

4.00
100

0.961 +0.078/-0.000

24.4 +2/0

1.197

30.4

0.941 – 0.1.079

23.9 – 27.4

August 1999, Rev. B

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

TO-263AB/D2PAK (FS PKG Code 45)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 1.4378

August 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™
CoolFET™
CROSSVOLT™

2

E

CMOS

TM

FACT™
FACT Quiet Series™

®

FAST
FASTr™
GTO™
HiSeC™

ISOPLANAR™
MICROWIRE™
POP™
PowerTrench



QFET™
QS™

Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8

SyncFET™
TinyLogic™
UHC™
VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT
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RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.

2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or
In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. D