Datasheet NDB6060L Datasheet (Fairchild Semiconductor)

Page 1

NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

April 1996

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

48A, 60V. R Low drive requirements allowing operation directly from logic

drivers. V Critical DC electrical parameters specified at elevated

temperature. Rugged internal source-drain diode can eliminate the need

for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low R TO-220 and TO-263 (D2PAK) package for both through hole

= 0.025Ω @ VGS = 5V.

DS(ON)

< 2.0V.

GS(TH)

DS(ON)

and surface mount applications.

________________________________________________________________________________

Absolute Maximum Ratings T

= 25°C unless otherwise noted

Symbol Parameter NDP6060L NDB6060L Units

DSS

DGR

GSS

Drain-Source Voltage 60 V Drain-Gate Voltage (RGS < 1 MΩ)

60 V

Gate-Source Voltage - Continuous ± 16 V

- Nonrepetitive (tP < 50 µs)

± 25

Drain Current - Continuous 48 A

- Pulsed 144

Total Power Dissipation @ TC = 25°C 100 W

Derate above 25°C 0.67 W/°C TJ,T T

Operating and Storage Temperature -65 to 175 °C

STG

Maximum lead temperature for soldering

275 °C

purposes, 1/8" from case for 5 seconds

NDP6060L Rev. D / NDB6060L Rev. E

Page 2

Electrical Characteristics (T

= 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 1)

DSS

Single Pulse Drain-Source Avalanche

VDD = 25 V, ID = 48 A 200 mJ

Energy Maximum Drain-Source Avalanche Current 48 A

OFF CHARACTERISTICS

BV I

DSS

GSSF

GSSR

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 250 µA VDS = 60 V, V

= 0 V

TJ = 125°C

Gate - Body Leakage, Forward

VGS = 16 V, VDS = 0 V

Gate - Body Leakage, Reverse VGS = -16 V, VDS = 0 V -100 nA

60 V

250 µA

1 mA

100 nA

ON CHARACTERISTICS (Note 1)

I g

D(on)

GS(th)

DS(ON)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

TJ = 125°C

Static Drain-Source On-Resistance VGS = 5 V, ID = 24 A 0.025

TJ = 125°C

VGS = 10 V, ID = 24 A On-State Drain Current VGS = 5 V, VDS = 10 V 48 A Forward Transconductance

VDS = 10 V, ID = 24 A

1 2 V

0.65 1.5

Ω

0.04

0.02

10 S

DYNAMIC CHARACTERISTICS

iss

oss

rss

Input Capacitance Output Capacitance 460 800 pF Reverse Transfer Capacitance 150 400 pF

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

1630 2000 pF

SWITCHING CHARACTERISTICS (Note 1)

t t

Q Q Q

D(on)

D(off)

Turn - On Delay Time Turn - On Rise Time 320 500 nS

Turn - Off Delay Time 49 100 nS

VDD = 30 V, ID = 48 A,

VGS = 5 V, R

= 15 Ω

GEN

= 15 Ω,

Turn - Off Fall Time 161 300 nS

Total Gate Charge Gate-Source Charge 8.2 nC Gate-Drain Charge 21 nC

VDS = 48 V,

ID = 48 A, VGS = 5 V

15 30 nS

36 60 nC

NDP6060L Rev. D / NDB6060L Rev. E

Page 3

Electrical Characteristics (T

= 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS

I ISM V

t I

Maximum Continuos Drain-Source Diode Forward Current 48 A Maximum Pulsed Drain-Source Diode Forward Current 144 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = 24 A (Note 1) 1.3 V

TJ = 125°C

Reverse Recovery Time Reverse Recovery Current 2 3.6 8 A

VGS = 0 V, IF = 48 A, dIF/dt = 100 A/µs

35 75 140 ns

1.2

THERMAL CHARACTERISTICS

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

Thermal Resistance, Junction-to-Case 1.5 °C/W Thermal Resistance, Junction-to-Ambient 62.5 °C/W

NDP6060L Rev. D / NDB6060L Rev. E

Page 4

Typical Electrical Characteristics

100

V = 10V

6.0

5.0

4.5

I , DRAIN-SOURCE CURRENT (A)

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

4.0

Figure 1. On-Region Characteristics.

I = 24A

1.75

V = 5V

1.5

1.25

DS(ON)

R , NORMALIZED

0.75

DRAIN-SOURCE ON-RESISTANCE

0.5

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

3.5

3.0

2.5

V = 3.0V

1.5

3.5

4.0

4.5

5.0

DS(on)

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5 0 20 40 60 80 100

I , DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

V = 5.0V

1.8

1.6

1.4

1.2

DS(on)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6 0 20 40 60 80 100

T = 125°C

25°C

I , DRAIN CURRENT (A)

-55°C

5.5

6.0

Figure 3. On-Resistance Variation

with Temperature.

V = 10V

I , DRAIN CURRENT (A)

1 2 3 4 5

V , GATE TO SOURCE VOLTAGE (V)

T = -55°C

25°C

125°C

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.3

1.2

1.1

0.9

0.8

GS(th)

0.7

V , NORMALIZED

0.6

GATE-SOURCE THRESHOLD VOLTAGE

0.5

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with

Temperature.

NDP6060L Rev. D / NDB6060L Rev. E

V = V

I = 250µA

Page 5

Typical Electrical Characteristics (continued)

1.15

I = 250µA

1.1

1.05

DSS

BV , NORMALIZED

0.95

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.9

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

Figure 7. Breakdown Voltage Variation with

Temperature.

4000 3000

2000

1000

500

300

CAPACITANCE (pF)

f = 1 MHz V = 0V

200

100

1 2 3 5 10 20 30 50

V , DRAIN TO SOURCE VOLTAGE (V)

T = 125°C

0.1

0.01

0.001

I , REVERSE DRAIN CURRENT (A)

0.0001

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8

25°C

-55°C

V = 0V

V , BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature.

I = 48A

iss

oss

rss

V , GATE-SOURCE VOLTAGE (V)

0 20 40 60 80

V = 12V

Q , GATE CHARGE (nC)

48V

24V

Figure 9. Capacitance Characteristics.

GEN

Figure 11. Switching Test Circuit.

Figure 10. Gate Charge Characteristics.

t t

on off

d(on)

OUT

90%

10%

DUT

50%

d(off)

50%

90%

10%

INVERTED

10%

PULSE WIDTH

Figure 12. Switching Waveforms.

NDP6060L Rev. D / NDB6060L Rev. E

Page 6

Typical Electrical Characteristics (continued)

T = -55°C

25°C

125°C

V =10V

g , TRANSCONDUCTANCE (SIEMENS)

0 10 20 30 40

I , DRAIN CURRENT (A)

Figure 13. Transconductance Variation with

300 200

100

RDS(ON) Limit

I , DRAIN CURRENT (A)

V = 5V

SINGLE PULSE

R = 1.5 C/W

T = 25°C

1 2 3 5 10 20 30 60 100

V , DRAIN-SOURCE VOLTAGE (V)

100µs

1ms

10ms

100ms

Figure 14. Maximum Safe Operating. Area

Drain Current. and Temperature

0.1

0.05

0.02

0.01

0.2

D = 0.5

Single Pulse

t ,TIME (ms)

R (t) = r(t) * R

R = 1.5 °C/W

P(pk)

T - T = P * R (t)

Duty Cycle, D = t /t

0.5

0.3

0.2

0.1

0.05

0.03

r(t), NORMALIZED EFFECTIVE

0.02

TRANSIENT THERMAL RESISTANCE

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000

1 2

10µs

Figure 15. Transient Thermal Response Curve.

NDP6060L Rev. D / NDB6060L Rev. E

Page 7

TO-220 Tape and Reel Data and Package Dimensions

TO-220 Tube Packing Configuration: Figure 1.0

45 units per Tube

12 Tubes per Bag

530mm x 130mm x 83mm

2 bags per Box

Conduct ive Plastic Bag

Intermediate box

Packaging Description:

TO-220 parts are shipped nor mally in t ube. The tube is made of PVC plas tic treated wi th anti -stati c agent .These tubes in s tandard opt ion are placed in side a di ssipativ e plastic bag, barcode labeled, and placed inside a box made of r ecy cl able cor rug ate d pape r. On e bo x c ont ain s tw o ba gs m ax im um (se e fi g. 1. 0). A nd on e or se ver al o f these boxes are placed in side a labeled shipp ing box wh ic h c o m es in d i f f er en t s i z es de pe ndi n g o n t h e nu m be r of parts shipped. The other option comes in bulk as described in the Packagin g In fo rm atio n table. The unit s in this op tion ar e placed inside a s mall box laid w ith antistatic bu bble sheet. These smaller box es are indiv idually labeled and plac ed inside a lar ger box (see fig. 3.0). These larger or int ermediate boxes then w ill be placed finally ins ide a labeled ship ping box whic h st ill co mes in diff erent sizes depending on the num b er of units shipped.

TO-220 Packaging Information: Figure 2.0

TO-220 Packaging Information

Packaging Option Packaging type

Qty per Tube/Box Box Dimension (mm) Max qty per Box Weight per unit (gm)

Note/Comments

Stan dard

(no fl ow code )

Rail/Tube

530x130x83

1,080

1.4378

S62Z BULK

114x102x51

1,500

1.4378

TO-220 bulk Packing Configuration: Figure 3.0

FSCINT Label

300 units per

EO70 box

114mm x 102mm x 51mm

TO-220 Tube Configuration: Figure 4.0

Note: All dim ensio ns are in inches

9852

NDP4060L

300

EO70 Immediate Box

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

Anti-static

Bubbl e Sheets

5 EO70 boxes per per

Intermed iat e Bo x

9852

NDP4060L

20.000 +0.031

-0.065

1080 units maximum

FSCINT Label

0.123 +0.001

-0.003

9852

NDP4060L

9852

NDP4060L

9852

NDP4060L

quantity per box

530mm x 130mm x 83mm

Intermediate box

FSCINT Label

0.450

9852

NDP4060L

±.030

0.800

FSCINT Label sample

FAIRCHILD SEMICONDUCTOR CORPORAT ION

LOT:

CBVK741B019

NSID:

FDP7060

D/C1:

SPEC REV:

D9842

1500 units maximum

quantity per intermediate box

0.165

0.080

0.275

1.300 ±.015

0.032 ±.003

0.275

QA REV:

0.160

QTY:

1080

SPEC:

HTB:B

(FSCINT)

August 1999, Rev. B

Page 8

TO-220 Tape and Reel Data and Package Dimensions, continued

TO-220 (FS PKG Code 37)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 1.4378

September 1998, Rev. A

Page 9

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions

TO-263AB/D2PAK Packaging Configuration: Figure 1.0

ELECTROSTATIC

SENSITIVE DEVICES

DO NOT SHIP OR STORE NEAR STRONG ELECTROSTATIC ELECTROMAGNETIC, MAGNETIC OR RADIOACTIVE FIELDS

TNR DATE PT NUMBER PEEL STRENGTH MIN ______________gms

Customized Label

MAX _____________ gms

ESD Label

Moisture Sensitive

Antistatic Cover Tape

CAUTION

Label

F63TNR Label

Static Dissipative

Embossed Car rier Tape

FDB603AL

9835

Packaging Description:

TO-263/D2PAK parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 800 unit s per 13" or 330cm di ameter reel. Th e reels are dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further described in the Packaging Information table.

These full reels are individually barcode labeled, dry packed, and placed inside a standard intermediate box (illus trated in fi gure 1.0) ma de of recycla ble corru gated brown paper. One box contains one reel maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.

FDB603AL

9835

FDB603AL

9835

FDB603AL

9835

TO-263AB/D2PAK Packaging Information

Packaging Option Packaging type

Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel

Note/Comments

Standard

(no flow code)

TNR

13" Dia

359x359x57 530x130x83

1.4378 1.4378

1.6050 -

L86Z

Rail/Tube

800 45

800 1,080

F63TNR Label sample

LOT: CBVK741B019

FSID: FDB6320L

D/C1: D9842 QTY1: SPEC REV: D/C2: QTY2: CPN:

QTY: 800

SPEC:

N/F: F (F63TNR)3

TO-263AB/D2PAK Tape Leader and Trailer Configuration: Figure 2.0

TO-263AB/D2PAK Unit Orientation

359mm x 359mm x 57mm

Stand a r d In t e rm ed iate box

ESD Label

Moisture Sensitive

Label

F63TNR Label

DRYPACK Bag

Carrier Tape

Cover Tape

Trailer Tape 400mm minimum or 25 empty pockets

Components

Leader Tape 1520mm minimum or 95 empty pockets

September 1999, Rev. B

Page 10

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

TO-263AB/D2PAK Embossed Carrier Tape Configuration: Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg ty pe

O263AB/

PAK

(24mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

TO-263AB/D

A0 B0 W D0 D1 E 1 E2 F P1 P0 K0 T Wc Tc

10.60

15.80

24.0

1.55

1.60

1.75

22.25

+/-0.10

+/-0.3

+/-0.05

10 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

PAK Reel Configuration:

+/-0.10

Sketch B (Top View)

Component Rotation

min

11.50 +/-0.10

10 deg maximum

Figure 4.0

W1 Measured at Hub

Dim A

max

Dim N

16.0 +/-0.1

Typical component cavity center line

Typical component center line

Dim A

Max

Dim D

min

4.0 +/-0.1

4.90

0.450 +/-0.150

21.0 +/-0.3

0.9mm maximum

+/-0.10

0.9mm maximum

Sketch C (Top View)

Component lateral movement

B Min

Dim C

0.06 +/-0.02

Tape Size

24mm 13" Dia

Option

DETAIL AA

13" Diameter Option

See detail AA

W2 max Measured at Hub

Dimensions are in inches and millimeters

Reel

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

13.00

0.059

1.5

512 +0.020/- 0.008 13 +0.5/-0.2

330

0.795

20.2

4.00 100

0.961 +0.078/-0.000

24.4 +2/0

1.197

30.4

0.941 – 0.1.079

23.9 – 27.4

August 1999, Rev. B

Page 11

TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued

TO-263AB/D2PAK (FS PKG Code 45)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 1.4378

August 1998, Rev. A

Page 12

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™

CMOS

FACT™ FACT Quiet Series™

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QFET™ QS™

Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8

TinyLogic™ UHC™ VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION. As used herein:

1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Datasheet NDB6060L Datasheet (Fairchild Semiconductor)

Specifications and Main Features

Frequently Asked Questions

User Manual