Datasheet NDP603AL, NDB603AL Datasheet (Fairchild Semiconductor)

NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

January 1996

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

25A, 30V. R

= 0.022Ω @ VGS=10V.

DS(ON)

Critical DC electrical parameters specified at elevated temperature.

Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

High density cell design for extremely low R

DS(ON)

.

175°C maximum junction temperature rating.

______________________________________________________________________________

D

G

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter NDP603AL NDB603AL Units

V

DSS

V

GSS

I

D

Drain-Source Voltage 30 V Gate-Source Voltage - Continuous ± 20 V Drain Current - Continuous 25 (Note 1) A

- Pulsed 100

P

D

Total Power Dissipation @ TC = 25°C 50 W

Derate above 25°C 0.4 W/°C TJ,T T

L

Operating and Storage Temperature Range -65 to 175 °C

STG

Maximum lead temperature for soldering purposes,

275 °C

1/8" from case for 5 seconds

THERMAL CHARACTERISTICS

R

θ

R

θ

Thermal Resistance, Junction-to-Case 2.5 °C/W

JC

Thermal Resistance, Junction-to-Ambient 62.5 °C/W

JA

NDP603AL.SAM

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 2)

W

DSS

I

AR

Single Pulse Drain-Source Avalanche

VDD = 15 V, ID = 25 A 100 mJ

Energy Maximum Drain-Source Avalanche Current 25 A

OFF CHARACTERISTICS

BV I I I

DSS

GSSF

GSSR

DSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward

VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V

Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA

30 V

10 µA

100 nA

ON CHARACTERISTICS (Note 2) V

GS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

1.1 1.5 3 V

TJ = 125oC 0.7 1.1 2.2

VDS = VGS, ID = 10 mA

1.4 1.85 3

TJ = 125oC 1 1.5 2.2

R

DS(ON)

Static Drain-Source On-Resistance

VGS = 10 V, ID = 25 A

0.019 0.022

TJ = 125oC 0.028 0.045

VGS = 4.5 V, ID = 10 A

I

D(on)

On-State Drain Current VGS = 10 V, VDS = 10 V 60 A

VGS = 4.5 V, VDS = 10 V

g

FS

Forward Transconductance VDS = 10 V, ID = 25 A 18 S

0.031 0.04

15

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance Output Capacitance 540 pF

VDS = 15 V, VGS = 0 V, f = 1.0 MHz

Reverse Transfer Capacitance 175 pF

1100 pF

SWITCHING CHARACTERISTICS (Note 2)

t

D(on)

t

r

t

D(off)

t

f

Q

g

Q

gs

Q

gd

Turn - On Delay Time VDD = 15 V, ID = 25 A, Turn - On Rise Time 70 110 ns

VGS = 10 V, R

GEN

= 24 Ω

15 30 ns

Turn - Off Delay Time 90 150 ns Turn - Off Fall Time 80 130 ns Total Gate Charge VDS = 10 V, Gate-Source Charge 5 7 nC

ID = 25 A, VGS = 10 V

28 40 nC

Gate-Drain Charge 7 10 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

V

SD

Note:

1. Maximum DC current limited by the package.

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Maximum Continuous Drain-Source Diode Forward Current 25 A Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 25 A (Note 2)

1.3 V

Ω

NDP603AL.SAM

Typical Electrical Characteristics

80

60

40

V =10V

GS

8.0

7.0

6.0

5.0

4.5

20

D

I , DRAIN-SOURCE CURRENT (A)

0

0 1 2 3 4 5

V , DRAIN-SOURCE VOLTAGE (V)

DS

4.0

3.0

3

V = 4V

2.5

GS

4.5

5.0

2

6.0

1.5

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

0.5 0 20 40 60 80

I , DRAIN CURRENT (A)

D

7.0

8.0 10

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage

and Drain Current.

1.6

I = 25A

D

V =10V

1.4

GS

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

2.5

V = 10V

GS

2

T = 125°C

1.5

J

25°C

DS(on)

1

R , NORMALIZED

DRAIN-SOURCE ON-RESISTANCE

0.5 0 20 40 60 80

I , DRAIN CURRENT (A)

D

-55°C

Figure 3. On-Resistance Variation

with Temperature.

40

V = 10V

DS

30

20

10

D

I , DRAIN CURRENT (A)

0

1 2 3 4 5 6

V , GATE TO SOURCE VOLTAGE (V)

GS

T = -55°C

J

25

125

Figure 5. Drain Current Variation with Gate

Voltage and Temperature.

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

0.05

V = 10V

DS

0.04

0.03

0.02

D

I , DRAIN CURRENT (A)

0.01

0

0.5 1 1.5 2 2.5

T = 125°C

J

V , GATE TO SOURCE VOLTAGE (V)

GS

25°C

-55°C

Figure 6. Sub-threshold Drain Current Variation

with Gate Voltage and Temperature.

NDP603AL.SAM

Typical Electrical Characteristics (continued)

Pulse Width

2.2

2

1.8

1.6

1.4

1.2

1

0.8

Vth, GATE-SOURCE THRESHOLD VOLTAGE (V)

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

I = 10mA

D

1mA

250uA

V = V

DS GS

Figure 7. Gate Threshold Variation with

Temperature

2500 2000

1000

500

300

CAPACITANCE (pF)

200

f = 1 MHz V = 0V

GS

100

0.1 0.2 0.5 1 2 5 10 20 30 V , DRAIN TO SOURCE VOLTAGE (V)

DS

C

iss

oss

C

rss

1.12

I = 250µA

D

1.08

1.04

1

DSS

BV , NORMALIZED

0.96

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.92

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

Figure 8. Breakdown Voltage Variation with

Temperature.

10

I = 25A

D

8

6

4

2

GS

V , GATE-SOURCE VOLTAGE (V)

0

0 5 10 15 20 25 30

Q , GATE CHARGE (nC)

g

V = 5V

DS

10

20

Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.

V

DD

t

d(on)

V

IN

V

GS

R

GEN

G

R

L

D

V

OUT

DUT

Input, V

S

Figure 11. Switching Test Circuit

t

on

t

r

t

d(off)

90%

out

10%

in

50%

10%

Figure 12. Switching Waveforms

50%

90%

t

10%

off

90%

t

f

Inverted

NDP603AL.SAM

Typical Electrical Characteristics (continued)

25

20

15

T = -55°C

J

25°C

125°C

10

5

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

0 10 20 30 40

I , DRAIN CURRENT (A)

D

V = 10V

DS

Figure 13. Transconductance Variation with Drain

Current and Temperature

150 100

50

20

RDS(ON) Limit

10

5

V = 20V

2

D

I , DRAIN CURRENT (A)

1

0.5

0.1 0.5 1 2 5 10 30 50

GS

SINGLE PULSE

T = 25°C

C

V , DRAIN-SOURCE VOLTAGE(V)

DS

DC

1ms

10ms

100ms

1s

Figure 15. Maximum Safe Operating Area

40 20

V = 0V

GS

10

5 2

T = 125°C

J

1

0.5

0.2

0.1

S

I , REVERSE DRAIN CURRENT (A)

0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

25°C

V , BODY DIODE FORWARD VOLTAGE (V)

SD

-55°C

Figure 14. Body Diode Forward Voltage

Variation with Current and Temperature

1

0.1

0.05

0.02

D = 0.5

0.2

Single Pulse

t ,TIME (ms)

1

R (t) = r(t) * R

R = 2.5 °C/W

JC

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

C

Duty Cycle, D = t /t

θ

JC

1 2

0.5

0.3

0.2

0.1

0.05

0.01

0.03

r(t), NORMALIZED EFFECTIVE

0.02

TRANSIENT THERMAL RESISTANCE

0.01

0.01 0.1 1 10 100 1000

Figure 16. Transient Thermal Response Curve

θJCθJC

NDP603AL.SAM

Datasheet NDP603AL, NDB603AL Datasheet (Fairchild Semiconductor)

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