Page 1
July 1997
NDP6030 / NDB6030
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance and
provide superior switching performance. These devices are
particularly suited for low voltage applications such as DC/DC
converters and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
________________________________________________________________________________
46 A, 30 V. R
= 0.018 @ VGS=10 V.
DS(ON)
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low R
DS(ON)
.
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications
D
G
S
Absolute Maximum Ratings T
Symbol Parameter NDP6030 NDB6030 Units
V
DSS
V
DGR
V
GSS
I
D
P
D
TJ,T
THERMAL CHARACTERISTICS
R
θJC
R
θ JA
Drain-Source Voltage 30 V
Drain-Gate Voltage (RGS < 1 MΩ)
Gate-Source Voltage - Continuous ±20 V
Drain Current - Continuous 46 A
- Pulsed 135
Total Power Dissipation @ TC = 25°C
Derate above 25°C 0.5 W/°C
Operating and Storage Temperature Range -65 to 175 °C
STG
Thermal Resistance, Junction-to-Case 2 °C/W
Thermal Resistance, Junction-to-Ambient 62.5 °C/W
= 25°C unless otherwise noted
C
30 V
75 W
© 1997 Fairchild Semiconductor Corporation
NDP6030.RevB
Page 2
Electrical Characteristics (T
= 25°C unless otherwise noted)
C
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note)
W
DSS
I
AR
Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 46 A 100 mJ
Maximum Drain-Source Avalanche Current 46 A
OFF CHARACTERISTICS
BV
∆BV
I
DSS
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temp. Coefficient
/∆T
J
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 o C
VDS = 24 V, V
GS
= 0 V
30
10 µA
mV/oC
TJ = 125°C 1 mA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
100 nA
ON CHARACTERISTICS (Note)
∆V
V
GS(th)
GS(th)
Gate Threshold VoltageTemp. Coefficient
/∆T
J
Gate Threshold Voltage
ID = 250 µA, Referenced to 25 o C
VDS = VGS, ID = 250 µA
-6
mV/oC
2 2.3 4 V
TJ = 125°C 1.4 1.7 2.8
R
I
g
D(on)
DS(ON)
FS
Static Drain-Source On-Resistance
VGS = 10 V, ID = 23 A
TJ = 125°C
On-State Drain Current VGS = 10 V, VDS= 10 V 60 A
Forward Transconductance
VDS = 10 V, ID = 23 A
0.014 0.018
0.019 0.032
22 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 915 pF
Reverse Transfer Capacitance 385 pF
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
1165 pF
SWITCHING CHARACTERISTICS (Note)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
Turn - On Delay Time
Turn - On Rise Time 103 200 nS
VDD = 30 V, ID = 46 A,
VGS = 10 V, R
GEN
= 11 Ω
Turn - Off Delay Time 40 80 nS
Turn - Off Fall Time 98 200 nS
g
gs
gd
Total Gate Charge
Gate-Source Charge 7 nC
Gate-Drain Charge 13 nC
VDS =15 V,
ID = 46 A, VGS = 10 V
9 18 nS
34 47 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
I
S
ISM
V
SD
Maximum Continuos Drain-Source Diode Forward Current 46 A
Maximum Pulsed Drain-Source Diode Forward Current 135 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 23 A (Note) 0.9 1.3 V
Note: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
Ω
NDP6030.RevB
Page 3
Typical Electrical Characteristics
J
R , NORMALIZED
R , NORMALIZED
100
V = 20V
80
60
40
20
D
I , DRAIN-SOURCE CURRENT (A)
0
0 1 2 3 4 5
12
GS
10
8.0
7.0
6.0
5.0
4.0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.75
I = 23A
D
V = 10V
GS
1.5
1.25
1
DS(ON)
0.75
DRAIN-SOURCE ON-RESISTANCE
0.5
-50 -25 0 25 50 75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
2
V = 5.0V
GS
1.8
1.6
1.4
1.2
1
DS(0N)
DRAIN-SOURCE ON-RESISTANCE
0.8
0.6
0 20 40 60 80 100
6.0
7.0
8.0
I , DRAIN CURRENT (A)
D
10
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.08
0.06
0.04
0.02
DS(0N)
R , ON-RESISTANCE (OHM)
0
4 5 6 7 8 9 10
V , GATE TO SOURCE VOLTAGE (V)
GS
25°C
125°C
12
20
ID = 23A
Figure 3. On-Resistance Variation
with Temperature.
60
V = 10V
DS
50
40
30
20
D
I , DRAIN CURRENT (A)
10
0
1 2 3 4 5 6 7
V , GATE TO SOURCE VOLTAGE (V)
GS
T = -55°C
A
125°C
Figure 5. Transfer Characteristics.
25°C
Figure 4. On Resistance Variation with
Gate-To- Source Voltage.
60
V = 0V
GS
10
1
0.1
T = 125°C
A
25°C
-55°C
0.01
0.001
S
I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
V , BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
NDP6030.RevB
Page 4
Typical Electrical Characteristics (continued)
DS
15
I = 46A
D
12
9
6
3
GS
V , GATE-SOURCE VOLTAGE (V)
0
0 10 20 30 40 50
Q , GATE CHARGE (nC)
g
V = 10V
DS
20V
Figure 7. Gate Charge Characteristics.
300
200
100
D
I , DRAIN CURRENT (A)
DS(ON)
R Limit
50
20
10
5
V = 10V
GS
SINGLE PULSE
2
1
0.5
0.5 1 3 5 10 20 30 50
o
R = 2 C/W
JC
θ
T = 25 °C
C
V , DRAIN-SOURCE VOLTAGE (V))
DS
100ms
DC
10ms
1ms
100µs
10µs
15V
4000
2000
C
1000
CAPACITANCE (pF)
500
f = 1 MHz
V = 0V
GS
200
0.1 0.3 1 3 10 30
V , DRAIN TO SOURCE VOLTAGE (V)
iss
C
oss
C
rss
Figure 8.Capacitance Characteristics.
1000
SINGLE PULSE
R =2.0° C/W
800
600
400
POWER (W)
200
0
0.01 0.1 1 10 100 1,000
SINGLE PULSE TIME (ms)
θJC
T = 25°C
A
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
0.01
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
t ,TIME (ms)
1
R (t) = r(t) * R
JC
θ
R = 2.0 °C/W
JC
θ
P(pk)
t
1
t
2
T - T = P * R (t)
J
C
Duty Cycle, D = t /t
Figure 11. Transient Thermal Response Curve.
NDP6030.RevB
JC
θ
JC
θ
1 2
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