Datasheet NDP6020P, NDB6020P Datasheet (Fairchild Semiconductor)

NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description Features

September 1997

These logic level P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

-24 A, -20 V. R R R

Critical DC electrical parameters specified at elevated temperature.

Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

175°C maximum junction temperature rating. High density cell design for extremely low R

= 0.05 Ω @ VGS= -4.5 V.

DS(ON)

= 0.07Ω @ VGS= -2.7 V.

DS(ON)

= 0.075 Ω @ VGS= -2.5 V.

DS(ON)

.

TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

________________________________________________________________________________

S

G

D

Absolute Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter NDP6020P NDB6020P Units

V

DSS

V

GSS

I

D

Drain-Source Voltage -20 V Gate-Source Voltage - Continuous ±8 V Drain Current - Continuous -24 A

- Pulsed -70

P

D

Total Power Dissipation @ TC = 25°C

60 W

Derate above 25°C 0.4 W/°C

TJ,T

Operating and Storage Temperature Range -65 to 175 °C

STG

NDP6020P Rev.C1

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS

BV I

I I

DSS

GSSF

GSSR

Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V

DSS

Zero Gate Voltage Drain Current

VDS = -16 V, V

GS

= 0 V

-1 µA

TJ = 55°C Gate - Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA Gate - Body Leakage, Reverse

VGS = -8 V, VDS = 0 V

-10 µA

-100 nA

ON CHARACTERISTICS (Note 1)

V

GS(th)

Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.7 -1 V

TJ = 125°C -0.3 -0.56 -0.7

R

R R I g

DS(ON)

D(on)

FS

Static Drain-Source On-Resistance

VGS = -4.5 V, ID = -12 A

TJ = 125°C Static Drain-Source On-Resistance VGS = -2.7 V, ID = -10 A 0.059 0.07 Static Drain-Source On-Resistance

VGS = -2.5 V, ID = -10 A On-State Drain Current VGS = -4.5 V, VDS = -5 V -24 A Forward Transconductance

VDS = -5 V, ID = -12 A

0.041 0.05

0.06 0.08

0.064 0.075

14 S

Ω

DYNAMIC CHARACTERISTICS

C

iss

C

oss

C

rss

Input Capacitance VDS = -10 V, VGS = 0 V, Output Capacitance 725 pF

f = 1.0 MHz

Reverse Transfer Capacitance 215 pF

1590 pF

SWITCHING CHARACTERISTICS (Note 1)

t t

Q Q Q

D(on)

r

D(off)

f

g

gs

gd

Turn - On Delay Time VDD = -20 V, ID = -3 A, Turn - On Rise Time 27 60 nS

VGS = -5 V, R

GEN

= 6 Ω

15 30 nS

Turn - Off Delay Time 120 250 nS Turn - Off Fall Time 70 150 nS

Total Gate Charge VDS = -10 V, Gate-Source Charge 5 nC

ID = -24 A, VGS = -5 V

25 35 nC

Gate-Drain Charge 10 nC

NDP6020P Rev.C1

Electrical Characteristics (T

= 25°C unless otherwise noted)

C

Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS

I ISM V

t I

S

SD

rr

Maximum Continuous Drain-Source Diode Forward Current -24 A Maximum Pulsed Drain-Source Diode Forward Current -80 A Drain-Source Diode Forward Voltage VGS = 0 V, IS = -12 A (Note 1) -1.1 -1.3 V Reverse Recovery Time

Reverse Recovery Current -1.7 A

VGS = 0 V, IF = -24 A,

dIF/dt = 100 A/µs

60 ns

THERMAL CHARACTERISTICS

R

θ

R

θ

Thermal Resistance, Junction-to-Case 2.5 °C/W

JC

Thermal Resistance, Junction-to-Ambient 62.5 °C/W

JA

Note:

1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

NDP6020P Rev.C1

Typical Electrical Characteristics

-50

-40

-30

-20

V = -5.0V

GS

-4.5

-4.0

-3.5

-3.0

-2.7

-2.5

-10

D

I , DRAIN-SOURCE CURRENT (A)

0

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 1. On-Region Characteristics.

1.8

I = -12A

D

1.6

V =-4.5V

GS

1.4

1.2

1

DS(ON)

R , NORMALIZED

0.8

DRAIN-SOURCE ON-RESISTANCE

0.6

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

Figure 3. On-Resistance Variation

with Temperature.

-2.0

1.8

V = -2.5 V

GS

1.6

-2.7

-3.0

1.4

1.2

DS(on)

R , NORMALIZED

1

DRAIN-SOURCE ON-RESISTANCE

-5-4-3-2-10

0.8 I , DRAIN CURRENT (A)

-3.5

-4.0

-4.5

-5.0

-50-40-30-20-100

D

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

2

V = -4.5V

GS

T = 125°C

1.5

1

R , NORMALIZEDDS(on)

J

25°C

-55°C

DRAIN-SOURCE ON-RESISTANCE

0.5

I , DRAIN CURRENT (A)

D

-50-40-30-20-100

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

-10

V = -5V

DS

-8

-6

-4

D

I , DRAIN CURRENT (A)

-2

0

V , GATE TO SOURCE VOLTAGE (V)

GS

Figure 5. Transfer Characteristics.

T = -55°C

J

125°C

25°C

-2.5-2-1.5-1-0.5

1.2

V = V

1.1

1

0.9

0.8

0.7

GS(th)

V , NORMALIZED

0.6

GATE-SOURCE THRESHOLD VOLTAGE

0.5

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

DS

I = -250µA

D

Figure 6. Gate Threshold Variation with

Temperature.

GS

NDP6020P Rev.C1

Typical Electrical Characteristics (continued)

1.08

I = -250µA

D

1.06

1.04

1.02

1

DSS

BV , NORMALIZED

0.98

DRAIN-SOURCE BREAKDOWN VOLTAGE

0.96

-50 -25 0 25 50 75 100 125 150 175 T , JUNCTION TEMPERATURE (°C)

J

Figure 7. Breakdown Voltage Variation with

Temperature.

4000 3000

2000

1000

500

300

CAPACITANCE (pF)

f = 1 MHz

200

V = 0 V

GS

100

0.1 0.2 0.5 1 2 5 10 20

-V , DRAIN TO SOURCE VOLTAGE (V) DS

C

rss

iss

oss

20 10

V = 0V

GS

4

1

0.1

0.01

0.001

S

-I , REVERSE DRAIN CURRENT (A)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2

-V , BODY DIODE FORWARD VOLTAGE (V)

SD

T = 125°C

J

25°C

-55°C

Figure 8. Body Diode Forward Voltage

Variation with Current and Temperature.

8

I = -24A

D

6

4

2

GS

-V , GATE-SOURCE VOLTAGE (V) 0

0 10 20 30 40

Q , GATE CHARGE (nC)

g

V = -5V

DS

-15V

-10V

Figure 9. Capacitance Characteristics.

-V

DD

V

IN

V

GS

R

GEN

G

R

D

S

L

DUT

V

OUT

Figure 10. Gate Charge Characteristics.

t t

on off

t

d(off)

50%

V

t

d(on)

OUT

V

IN

10%

50%

t

r

90%

PULSE WIDTH

Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms.

90%

10%

90%

t

f

INVERTED

NDP6020P Rev.C1

Typical Electrical Characteristics (continued)

30

V = - 5V

DS

24

18

12

T = -55°C

J

25°C

125°C

6

FS

g , TRANSCONDUCTANCE (SIEMENS)

0

I , DRAIN CURRENT (A)

D

Figure 13. Transconductance Variation with Drain

-25-20-15-10-50

100

60

RDS(ON) LIMIT

30

10ms

10

5

V = -4.5V

GS

D

-I , DRAIN CURRENT (A)

SINGLE PULSE

3

R = 2.5 °C/W

2

1

JC

θ

A

T = 25°C

C

1 2 5 10 20 30

- V , DRAIN-SOURCE VOLTAGE (V)

DS

100ms

DC

Figure 14. Maximum Safe Operating Area.

Current and Temperature.

1

0.1

0.05

0.02

D = 0.5

0.2

Single Pulse

t ,TIME (ms)

1

R (t) = r(t) * R

JC

θ

R = 2.5 °C/W

JC

θ

P(pk)

t

1

t

2

T - T = P * R (t)

J

C

Duty Cycle, D = t /t

0.5

0.3

0.2

0.1

0.05

0.01

0.03

0.02

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.01

0.01 0.1 1 10 100 1000

θ

1ms

JC

1 2

1µs

JC

θ

Figure 15. Transient Thermal Response Curve.

NDP6020P Rev.C1

Datasheet NDP6020P, NDB6020P Datasheet (Fairchild Semiconductor)

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