The MSM6926 and the MSM6946 are OKI's 300 bps single chip modem series which transmit and
receive serial, binary data over a switched telephone network using frequency shift keying (FSK).
The MSM6926 is compatible with ITU-T V.21 series data sets, while the MSM6946 is compatible
with Bell 103 series data sets.
These devices provide all the necessary modulation, demodulation, and filtering required to
implement a serial, asynchronous communication link.
OKI's single chip modem series is designed for users who are not telecommunication experts and
are easy to use cost effective alternative to standard discrete modem design.
CMOS LSI technology provides the advantages of small size, low power, and increased
reliability.
The design of the integrated circuit assures compatibility with a broad base of installed low speed
modems and acoustic couplers. Applications include interactive terminals, desk top computers,
point of sale equipment, and credit verification systems.
FEATURES
• Compatible with ITU-T V.21 (MSM6926)
• Compatible with BELL 103 (MSM6946)
• CMOS silicon gate process
• Switched capacitor and advanced CMOS analog technology
• Data rate from 0 to 300 bps
• Full duplex (2-Wire)
• Originate and Answer modes
• Selectable built-in timers and external delay timers possible
• All filtering, modulation, demodulation, and DTE interface on chip
Note:*: Both No. 17 pin and No. 39 pin are set to be at VA level by setting No. 33 pin at V
level.
NC: No connect pin
3/25
A
Page 4
¡ SemiconductorMSM6926/6946
PIN DESCRIPTIONS
Power
Name
DG1519—Ground reference of VD (digital ground)
AG
V
A
V
D
Pin No.
RS GS-K
1923—Ground reference of VA (digital ground)
2433—Supply voltage (+12 V nominal)
2635—Supply voltage (+5 V nominal)
I/O
Clocks
Name
X1141
X2242—
CLK
Pin No.
RS GS-K
343O873.9 Hz clock output. This clock is used to implement external delay circuits etc.
I/O
Master clock timing is provided by either a series resonant crystal (3.579545 MHz
—
±0.01%) connected across X1 and X2, or by an external TTL/CMOS clock driving
X2 with AC coupling. In this latter case, X1 is left unconnected.
See Fig. 10.
Description
Description
4/25
Page 5
¡ SemiconductorMSM6926/6946
Control
Name
RS GS-K
I/O
LT444I
CC52I
RS288I
CD11112O
CD21213I/O
RD11314O
RD21416I
CDR11620O
CDR21721I
M2231I
FT2332I
TS12736I
TS22838I
Pin No.
Description
Digital loop back test. During digital "High", any data sent on the X
pin will appear
D
on the RD pin, and any data sent on the RS1 pin will immediately appear on the
CS pin. Any data demodulated from the received carrier on the A
pin will be the
IN
modulated data to implement the transmitted carrier. In this case, sending the
transmitted carrier to the phone line depends on the CC, but never on RS1.
During digital loop back test, the data on this pin becomes a control signal for sending
the transmitted carrier to the phone line in place of RS1.
When an external circuit gives the RS/CS delay time which is not within the device
as required, this pin should be connected to the external circuit output.
See Fig. 11.
The fast carrier detection output. This pin is internally connected to the input of
the built-in carrier detect delay circuit. When an external delay circuit provides
the delay time which is not within the device as required, the CD1 should be
connected to the external circuit input. See Fig. 11.
When an external circuit gives the carrier detect delay time which is not within
the device as required, this pin becomes the input pin for the external circuit
output signal. In other cases (when using the delay time within the device, the
data on the TS1 or TS2 is not digital "High"), this pin becomes the Carrier detect
signal output.
The RD1 data is demodulated data from the received carrier and the RD2 is the
input of the following logic circuits referred to in Fig. 12. Usually, the RD1 data
is input directly to RD2. In some cases, as input data to RD2, the data that is
controlled by NCU (Network control unit) etc. may be required in stead of the
RD1 data.
These two pins are the output (CRD1) and inverting input (CDR2) of the buffer
operational amplifier of which the noninverting input is connected to the built-in
voltage reference, stabilized to variations in the supply voltage and temperature.
See Fig. 13. An adequate carrier-detect level can be set by selecting the ratio of
R
to R9. Therefore, the loss in the received carrier level by phone-line
8
transformer can be compensated by adjusting the ratio of R
to R9. R8 + R9
8
should be greater than 50 kW.
Answer/Originate mode select. During digital "High", the originate mode is
selected. A low input selects the answer mode.
This pin may be used for device tests only. During digital "High", the A
pin will
O
be connected to receiving filter output instead of transmitting filter output.
RS/CS delay and carrier detect delay options referred to chapter about timing
characteristics are selected by TS1 and TS2 inputs. Be careful that each delay
can not be individually selected. If another delay time than the ones within the
device are required as an option, input a digital "High" to the TS1 and TS2 pin
and implement the external delay circuits to obtain the desired delay
characteristics. In this case, the CD2 pin becomes not only the input for the
external circuit output signal, but also the Carrier detect output. See Fig. 11.
5/25
Page 6
¡ SemiconductorMSM6926/6946
Input/Output
Name
RS GS-K
I/O
CS63O
RS174I
XD 99I
RD1010O
SG21822O
SG12024O
Pin No.
A
IN
A
O
2126I
2534O
Description
Clear to send signal output. The digital "High" level indicates the "OFF" state and
digital "Low" indicates the "ON" state. This output goes "Low" at the end of a delay
(RS/CS delay) initiated when RS1 (Request to send) goes "Low".
Request to send signal input. The digital "High" level indicates the "OFF" state.
The digital "Low" level indicates the "ON" state and instructs the modem to enter
the transmit mode. This input must remain "Low" for the duration of data
transmission. "High" turns the transmitter off.
This is digital data to be modulated and transmitted via A
. Digital "High" will be
O
transmitted as "Mark". Digital "Low" will be transmitted as "Space". No signal
appears at A
Digital data demodulated from A
unless RS1 is "Low".
O
is serially available at this output. Digital
IN
"High" indicates "Mark" and digital "Low" indicates "Space". For example, under
the following condition, this output is forced to be "Mark" state because the data
may be invalid.
• When CD2 (Carrier detect) is in the "OFF" state.
The SG1 and ST2 are built-in analog signal grounds. SG2 is used only for
Carrier detect function. The DC voltage of SG1 is approximately 6 V, so the
analog line interface must be implemented by AC coupling. See Fig. 9. To make
impedance lower and ensure the device performance, it is necessary to put
bypass capacitors on SG1 and SG2 in close physical proximity to the device.
This is the input for the analog signal from the phone line. The modem extracts
the information in this modulated carrier and converts it into a serial data stream
for presentation at RD output.
This analog output is the modulated carrier to be conditioned and sent over the
phone line.
6/25
Page 7
¡ SemiconductorMSM6926/6946
ABSOLUTE MAXIMUM RATINGS
Parameter
Power Supply Voltage
Analog Input Voltage
Digital Input Voltage
Operating Temperature
Storage Temperature
*1*2CDR2, A
IN
Symbol
*1
*2
*3
T
V
V
V
V
T
STG
A
D
IA
ID
op
X1, LT, CC, RS1, RS2, XD, CD2, RD2, M, FT, TS1, T
*3CD2 is I/O terminal
Condition
Ta = 25°C
With respect
to AG or DG
—
—
S2
Rating
–0.3 to 15
–0.3 to 7
–0.3 to VA + 0.3
–0.3 to V
D
+ 0.3
0 to +70
–55 to 150
Unit
V
°C
7/25
Page 8
¡ SemiconductorMSM6926/6946
pp
RECOMMENDED OPERATING CONDITIONS
ParameterUnitMax.Typ.Min.SymbolCondition
13.212.010.8VAWith respect to AG
Power Supply Voltage
Operating Temperature70—0T
op
—
CRYSTAL—3.579545———
R
1
R
2
R
3
R
4
R
5
R
6
R
7
R
8
R
9
C0, C
C
2
C
3
C
4
C
5
C
6
—
—
—
—
—
—
—
—
—
1
—
—
—
—
—
—
Transformer
impedance = 600 W
—
5.255.004.75VDWith respect to DG
V
—0—AG, DG—
°C
MHz
—600—
W
—51—
—51—
—51—
—51—
kW
—51—
—51—
—33—
—51—
—0.047—
—2.2—
——22
mF—
——0.01
—10—
—10—
lication circuits using above conditions are provided in Fig. 8.
A
8/25
Page 9
¡ SemiconductorMSM6926/6946
ELECTRICAL CHARACTERISTICS
DC and Digital Interface Characteristics
= 12 V ±10%, VD = 5 V ±5%, Ta = 0 to 70°C)
(V
A
ParameterUnitMax.Typ.Min.SymbolCondition
Power Supply CurrentmA
Input Leakage Currnet
Input Voltage
Output Voltage
*1
*1
*2
A
D
IL
IH
IL
IH
OL
OH
Ordinary
operation
VI = 0 V
VI = V
D
—
—
IOL = 1.6 mA
IOH = 400 mA
—2.2V
—0.8 ¥ VDV
*3
*1 LT, CC, RS1, RS2, XD, CD2, RD2, M, FT, T
S1
, T
S2
*3
*2 CLK, CS, RD, CD1, CD2, RD1
15.07.5—I
2.01.0—I
10—–10I
mA
10—–10I
0.8—0V
V
D
V
0.4—0V
V
D
*3 CD2 is I/O terminal.
9/25
Page 10
¡ SemiconductorMSM6926/6946
Analog Interface Characteristics
1. MSM6926
Transmit carrier out (AO)
(V
= 12 V ±10%, VD = 5 V ±5%, Ta = 0 to 70°C)
A
ParameterUnitMax.Typ.Min.SymbolCondition
ORIGINATE MODE
Carrier Frequency
ANSWER MODE
Carrier Frequency
Output Resistance
Load Resistance
Load Capacitance
Transmit Level
Output Offset Voltage
Out-of-Band Energy
(Referred to Carrier Level)
Mark
1
Space
0
Mark
1
Space
0
V
OM
OS
AM
AS
OXA
LXA
LXA
OXA
OSX
OX
f
CRYSTAL
= 3.579545 MHz
—
—
—
—
—
= 0.047 mF
C
1
V
A
–1
2
V
A
2
Refer to Fig. 1E
986980974f
118611801174f
Hz
165616501644f
185618501844f
200——R
——50R
100——C
864V
V
A
+ 1
2
W
kW
pF
*1 dBm
V
dB
Receive carrier input (AIN)
ParameterUnitMax.Typ.Min.SymbolCondition
Input ResistancekW——100R
Receive Signal Level Range
ON
Carrier Detect Level
OFF
Carrier Detect HysteresisdB——2H
Receive filter
ParameterUnitMax.Typ.Min.SymbolCondition
Group Delay Distortion
IRA
IRA
ONR8 = 33 kW
CD
YS
ORIG.
DL
MODE
ANS.
D
MODE
AC
—
—
R
= 51 kW
9
VCD ON – VCD OFF
1600 to 1900 Hz
930 to 1230 Hz
V
= –6 dBmAdjacent Channel RejectionL
AIN
*2
–6—–48V
–43——V
*1 dBm
——–48VCD OFF
—800—
—850—
——50dB
ms
Notes: *1 0 dBm = 0.775 Vrms
*2 The resistor values are typical
10/25
Page 11
¡ SemiconductorMSM6926/6946
0246810121416
0
–20
–40
–60
dB
kHz
Figure 1 MSM6926 Out-of-Band Energy Referred to Carrier Level (C1 = 0.047 mF)
11/25
Page 12
¡ SemiconductorMSM6926/6946
0
–10
–20
–30
–40
Gain (dB)
–50
–60
–70
–80
50010001500
Frequency (Hz)
Figure 2 MSM6926 Low Band Filter
0
–10
–20
–30
–40
–50
Gain (dB)
–60
–70
–80
15002000
Frequency (Hz)
Figure 3 MSM6926 High Band Filter
12/25
Page 13
¡ SemiconductorMSM6926/6946
2. MSM6946
Transmit carrier out (AO)
(V
= 12 V ±10%, VD = 5 V ±5%, Ta = 0 to 70°C)
A
ParameterUnitMax.Typ.Min.SymbolCondition
ORIGINATE MODE
Carrier Frequency
ANSWER MODE
Carrier Frequency
Output Resistance
Load Resistance
Load Capacitance
Transmit Level
Output Offset Voltage
Out-of-Band Energy
(Referred to Carrier Level)
Mark
1
Space
0
Mark
1
Space
0
V
OM
OS
AM
AS
OXA
LXA
LXA
OXA
OSX
OX
f
CRYSTAL
= 3.579545 MHz
—
—
—
—
—
= 0.047 mF
C
1
V
A
–1
2
V
A
2
Refer to Fig. 4E
127612701264f
107610701064f
Hz
223122252219f
203120252019f
200——R
——50R
100——C
864V
V
A
+ 1
2
W
kW
pF
*1 dBm
V
dB
Receive carrier input (AIN)
ParameterUnitMax.Typ.Min.SymbolCondition
Input ResistancekW——100R
Receive Signal Level Range
ON
Carrier Detect Level
OFF
Carrier Detect HysteresisdB——1.5H
Receive Filter
ParameterUnitMax.Typ.Min.SymbolCondition
Group Delay Distortion
IRA
IRA
ONR8 = 33 kW
CD
YS
ORIG.
DL
MODE
ANS.
D
MODE
AC
—
—
R
= 51 kW
9
VCD ON – VCD OFF
1975 to 2275 Hz
1020 to 1320 Hz
V
= –6 dBmAdjacent Channel RejectionL
AIN
*2
–6—–48V
–43——V
*1 dBm
——–48VCD OFF
—650—
—750—
——50dB
ms
Notes: *1 0 dBm = 0.775 Vrms
*2 The resistor values are typical
13/25
Page 14
¡ SemiconductorMSM6926/6946
3.4
0246810121416dB200
0
–20
–40
–60
–25
–55
15 dB/OCTAVE
kHz
Figure 4 MSM6946 Out-of-Band Energy Referred to Carrier Level (C1 = 0.047 mF)
14/25
Page 15
¡ SemiconductorMSM6926/6946
0
–10
–20
–30
–40
Gain (dB)
–50
–60
–70
–80
50010001500
20002500
Figure 5 MSM6946 Low Band Filter
Frequency (Hz)
0
–10
–20
–30
–40
Gain (dB)
–50
–60
–70
–80
100015002000
25003000
Figure 6 MSM6946 High Band Filter
Frequency (Hz)
15/25
Page 16
¡ SemiconductorMSM6926/6946
Demodulated Bit Characteristics
(V
= 12 V ±10%, VD = 5 V ±5%, Ta = 0 to 70°C)
A
ParameterUnitMax.Typ.Min.SymbolCondition
Back-to-back over input
Peak Intersymbol Distortion%
signal range –6 to –40 dBm.
—6—ID
511-bit test pattern.
Back-to-back with 0.3 to
3.4 kHz flat noise.
Bit Error Rate
Receive signal level –25 dBm.
511-bit test pattern
—BER
–5
—10
5 dB
S/N
—
Timing Characteristics
1. MSM6926
ParameterUnitMax.Typ.Min.SymbolCondition
T
ON
RC
RS/CS Delay Time
TRC OFF
CD/ON Delay TimeTCD ON—
CD/OFF Delay TimeTCD OF—
Soft Turn-OFF TimeT
ST
RS1 = "0"
Æ CS = "0"
RS1 = "1"
Æ CS = "1"
= 12 V ±10%, VD = 5 V ±5%, Ta = 0 to 70°C)
(V
A
TS1TS2
00
01
10
11
External delay timer
405400395
353025
355350345
0.5—0**
00
01
10
320—300
20—5
170—150
External delay timer11
00
01
10
70—20
70—20
40—10
External delay timer11
**
—10——
ms
Refer to Fig. 7
Notes: *: Irrespective of I/O condition
16/25
Page 17
¡ SemiconductorMSM6926/6946
2. MSM6946
= 12 V ±10%, VD = 5 V ±5%, Ta = 0 to 70°C)
(V
A
ParameterUnitMax.Typ.Min.SymbolCondition
T
ON
RC
RS/CS Delay Time
TRC OFF
CD/ON Delay TimeTCD ON—
CD/OFF Delay TimeTCD OF—
Soft Turn-OFF TimeT
ST
RS1 = "0"
Æ CS = "0"
RS1 = "1"
Æ CS = "1"
TS1TS2
00
01
10
11
00
01
10
00
01
10
**
External delay timer
External delay timer11
External delay timer11
205200195
—+—
—+—
0.5—0**
120—100
—+—
—+—
50—10
—+—
—+—
—10——
ms
Refer to Fig. 8
Notes: *: Irrespective of I/O condition
+: Reserved
17/25
Page 18
¡ SemiconductorMSM6926/6946
TIMING DIAGRAM
RS1
CS
AO
AIN
T
RCON
T
CDON
T
RCOFF
T
ST
T
CDOFF
CD2
Figure 7 MSM6926/6946 Timing Diagram
18/25
Page 19
¡ SemiconductorMSM6926/6946
CLK
X2X
1
CCCSRS1
RS2
RD
Phone
Line
Crystal
LT
XD
CD1
CD2
RD1
RD2
DG
28272625242322212019181716
15
V
D
TS
1TS2
V
A
FT
M
AIN
AG
AO
SG1
SG2
CDR2
CDR1
DG
AG
V
A
V
D
C6
+
ORIG. MODE
ANS. MODE
Test
Data
Control
CS
RS
RD
XD
CD
V
D
C5
R
4
R
6
R
7
R
5
C0
R
2
R
3
+
–
R
1
C3C4R8R
9
DG or V
D
V
D
C2
C1
–
1
2
3
4
5
6
7
8
9
1011121314
–
+
+
–
APPLICATION CIRCUIT
Notes: 1. The crystal should be wired in close physical proximity to the device.
2. High level signals should not be routed next to low level signals.
3. Bypass capacitors on VA, SG1, and SG2 should be as close to the device as possible.
4. AG and DG should be connected as close to the system ground as possible.
Figure 8 Application Circuit Using MSM6926RS/MSM6946RS
19/25
Page 20
¡ SemiconductorMSM6926/6946
+6 dBm
R
5
R
AO
SG1
AIN
AG
25
20
21
19
C3
–6 dBm
4
R
7
R
6
–
+
R
R
3
R
2
1
C2
0 dBm
600 W : 600 W
Phone
–
+
C
0
C1
Line
0 dBm
Figure 9 MSM6926RS/MSM6946RS Application
C0, C
C
C
R
1
2
3
1
0.047 mF
2.2 mF
1 mF
600 W
R
2
R
3
R
4
(51 kW) Transmit signal level
R
5
51 kW
51 kW
51 kW
Note:The signal level on the AIN pin should not exceed –6 dBm.
V
D
External
Oscillator
3.58 MHz
*1
GATE
200 pF
*2
X2
X1
*1*2TTL or Hi-Speed CMOS GATE
Left unconnected
–6 dBm
R
(51 kW) Receive signal level
6
R
7
(33 kW) Carrier detect level
R
8
R
9
51 kW
51 kW
External Oscillator Connection
Figure 10
20/25
Page 21
¡ SemiconductorMSM6926/6946
RS
*
RCK
4020
CD
*
RCK
4020
*
RCK
4020
(A)
(B)
(C)
Q
Q
CK
V
D
V
D
D
873.9 Hz
RS1
RS2
TS1
TS2
CD1
CD2
CLK
(A) RS/CS delay, (B) CD/ON delay, (C) CD/OFF delay
Note:Supply voltage equals VD for all gates.
*: The desired delay can be realized by selecting the appropriate bits from 4020's outputs.
The number of the bits is not always 3. Each delay can be set differently from built-in delays.
Figure 11 External Delays Connection
21/25
Page 22
¡ SemiconductorMSM6926/6946
TS1
TS2
LT
RS1
CS
RS2
CC
XD
RD
CD2
CD1
RS/CS Delay
CD ON
CD OFF
SW Control
Delay
Modulator
De-
Modulator
Transmit
Filter
Receive
Filter
AO
AIN
Carrier
Detect
RD2 RD1
Figure 12 Equivalent Logic Interface of the Integrated Modem
+
COMP
–
CD1
CDR1
R
9
CDR2
R
8
SG2
(R8 + R9) ≥ 50 kW
Carrier
SG2
Carrier Detect
AC/DC Converter
V
REF
Figure 13 External Resistor Connection for the Setting of Carrier Detect Level
22/25
Page 23
¡ SemiconductorMSM6926/6946
PACKAGE DIMENSIONS
(Unit : mm)
DIP28-P-600-2.54
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
4.30 TYP.
23/25
Page 24
¡ SemiconductorMSM6926/6946
(Unit : mm)
QFP44-P-910-0.80-K
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.35 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
24/25
Page 25
¡ SemiconductorMSM6926/6946
(Unit : mm)
QFP44-P-910-0.80-2K
Mirror finish
Package material
Lead frame material
Pin treatment
Solder plate thickness
Package weight (g)
Epoxy resin
42 alloy
Solder plating
5 mm or more
0.41 TYP.
Notes for Mounting the Surface Mount Type Package
The SOP, QFP, TSOP, SOJ, QFJ (PLCC), SHP and BGA are surface mount type packages, which
are very susceptible to heat in reflow mounting and humidity absorbed in storage.
Therefore, before you perform reflow mounting, contact Oki’s responsible sales person for the
product name, package name, pin number, package code and desired mounting conditions
(reflow method, temperature and times).
25/25
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