Datasheet MSC83303 Datasheet (SGS Thomson Microelectronics)

Page 1
RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.EMIT T ER BALLASTED
. VSWR CAPABILITY
CONDITIONS
.HERMETIC STRIPAC
. P
OUT
@3.0GHz
3.0 W MIN. WI TH 7.0 dB GAIN
=
:1 @ RATED
PACKAGE
MSC83303
.250 2LF L (S01 0)
hermeticallysealed
ORDER CODE
MSC83303
PIN CONNECTION
DESC RIPTION
The MSC83303 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geome­try with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated con­ditions. The MSC83303 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 50°C) 10.0 W Device Current* 540 mA Collector-Supply Voltage* 30 V Junction Temperature 200 Storage Temperature 65 to +200
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
83303
°
C
°
C
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
September 2, 1994
Junction-Case Thermal Resistance* 12
°
C/W
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Page 2
MS C83 303
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
BV
CERIC
I
CBO
h
FE
= 1mA IE=0mA 45 V = 1mA IC=0 mA 3.5 V = 5mA RBE= 10 Ω 45 V
VCB= 28 V 0.5 mA VCE= 5V IC=200 mA 30 300
DYNAMIC
Symbol Test Cond itions
P
OUT
η
P
C
OB
f = 3.0 GHz P
cf=3.0 GHz P
f = 3.0 GHz P
G
f = 1 MHz V
0.79 W V
=
IN
0.79 W V
=
IN
0.79 W V
=
IN
28 V 5 pF
CB =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 2.5 2.8 W
=
CC
28 V 30 33 %
=
CC
28 V 5.0 5.5 dB
=
CC
Unit
Unit
TYPICA L PERFO R MA NCE
TYPICAL POWER OUTPUT
vs FREQUENCY
TYPICAL COLLECTOR EFFICIENCY
vs FREQUENCY
PERCENT POWER OUTPUT & COLLECTOR
EFFICIENCY vs COLLECTOR VOLTAGE
2/5
Page 3
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
MS C833 03
FREQ. ZIN()Z
CL
()
1.0 GHz 4.4 + j 8.7 13.0 + j 23.0
1.7 GHz 4.5 + j 14.5 7.5 + j 12.5
2.0 GHz 5.1 + j 20.0 6.0 + j 7.8
2.3 GHz 7.0 + j 25.0 4.5 + j 2.2
2.7 GHz 16.0 + j 33.0 3.8 j 2.0
3.0 GHz 33.0 + j 29.0 3.3 j 6.0
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
P V
OUT CC
Saturated
=
28 V
=
Normalized to 50 ohms
3/5
Page 4
MS C83 303
TEST CIRCUIT
Ref.: Dwg. No. C125562
RF Amplifier Power Output Test
All dimensions are in inches. Frequency 3.0 GHz
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Page 5
PACKAGE MECHANICAL DATA
Ref. Dwg. No. 12-0216 rev. A
MS C833 03
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectron­ics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
5/5
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