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RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.REFRACTORY\GOLD METALLIZATION
.VSWR CAPABILIT Y 20:1 @ R AT ED
CONDITIONS
.HERMETIC STRIPAC
. P
OUT
5.5 W MIN. WI TH 9.6 dB GAIN
=
PACKAGE
MSC82306
PRELIMINARY DATA
.250 2LF L (S010)
hermeticallysealed
ORDER CODE
MSC82306
PIN CONNECTION
DESC RIPTI ON
The MSC82306 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overaly diegeometry. Thisdevice
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82306 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
T
DISS
I
V
CC
T
STG
C
J
Power Dissipation* (TC≤ 50°C) 16.7 W
Device Current* 900 mA
Collector-Supply Voltage* 26 V
Junction Temperature 200
Storage Temperature − 65 to +200
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
82306
°
C
°
C
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
October 1992
Junction-Case Thermal Resistance* 9.0
°
C/W
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Page 2
MS C8 2 306
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 1mA IE= 0mA 44 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 44 — — V
VCB= 22V — — 0.5 mA
VCE= 5V IC= 400mA 30 — 300 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf=2.3 GHz P
G
P
C
OB
f = 2.3 GHz P
f = 2.3 GHz P
f = 1 MHz V
0.6 W V
=
IN
0.6 W V
=
IN
0.6 W V
=
IN
22 V — — 7.0 pF
CB =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
22 V 5.5 6.3 — W
=
CC
22 V 40 45 — %
=
CC
22 V 9.6 10.2 — dB
=
CC
Unit
Unit
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Page 3
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
FREQ. ZIN(Ω)Z
L=2.0 GHz 2.60 + j 11.0 4.1 − j 6.5
M=2.15 GHz 2.75 + j 12.5 3.3 − j 9.0
H=2.3 GHz 2.30 + j 14.5 2.8 − j 10.5
CL
(Ω)
M
M
MS C8 23 06
Z
H
L
Z
L
H
IN
CL
TEST CIRCUIT
Ref.: Dwg. No. C125518
All dimensions are in inches.
Frequency 2.3 GHz
RF Amplifier Power Output Test
P
0.6 W
=
IN
V
22 V
=
CC
Normalized to 50 ohms
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Page 4
MS C8 2 306
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of useof such information norfor any infringementof patents or other rights of third parties which mayresults fromits use. No
license is granted by implication orotherwise under any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice.This publication supersedes and replaces allinformation previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsinlife supportdevicesorsystems without express
written approval of SGS-THOMSON Microelectonics.
1994SGS-THOMSON Microelectronics - All RightsReserved
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