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RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
.HERMETIC STRIPAC
. P
OUT
1.8 W MIN. WITH 10.0 dB G AIN
=
PACKAGE
ORDER CODE
MSC82302
PIN CONNECTION
MSC82302
PRELIMINARY DATA
.250 2LF L (S010)
hermetically sealed
BRANDING
82302
DESC RIPT ION
The MSC82302 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overlay diegeometry. Thisdevice
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82302 was designed for Class C Amplifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
Power Dissipation* (TC≤ 50°C) 6.0 W
Device Current* 300 mA
Collector-Supply Voltage* 26 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 25
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
°
°
C/W
C
C
October 1992
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MS C82302
ELECTRICAL SPECIF ICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 1mA IE= 0mA 44 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 44 — — V
VCB= 22V — — 0.5 mA
VCE= 5V IC= 100mA 30 — 300 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf=2.3 GHz P
G
P
C
OB
f = 2.3 GHz P
f = 2.3 GHz P
f = 1 MHz V
0.18 W V
=
IN
0.18 W V
=
IN
0.18 W V
=
IN
22 V — — 3.5 pF
CB =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
22 V 1.8 — — W
=
CC
22 V 40 — — %
=
CC
22 V 10.0 — — dB
=
CC
Unit
Unit
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Page 3
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
MS C82302
Z
IN
H
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
FREQ. ZIN(Ω)Z
L=2.0 GHz 7.0 + j 15.5 6.0 + j 7.0
M=2.15 GHz 7.5 + j 18.0 4.5 + j 3.5
H=2.3 GHz 7.0 + j 19.5 3.0 + j 1.0
TEST CIRCUIT
Ref: Dwg. No. C125561
All dimensions are in inches
Frequency 2.3 GHz
CL
(Ω)
M
L
Z
CL
L
M
H
P
0.18 W
=
IN
V
22 V
=
CC
Normalized to 50 ohms
RF Amplifier Power Output Test
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Page 4
MS C82302
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementofpatents or other rights of third parties which may results from its use. No
license isgranted by implication orotherwise underany patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevicesor systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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