
RF & MICROWAVE TRANSISTORS
.EMITTER BALLASTED
.CLASS A LINEAR OPERATION
.COMMON EMITTER
.VSWR CAPABILITY
CONDITIONS
:1 @ RATED
∞
.ft 1.6 GHz TYPICAL
.NOISE FIGURE 15.5 dB @ 2 GHz
.P
= 27 dBm MIN. @ 1.0 GHz
OUT
.230 4L STUD (S027)
ORDER CO DE
MSC82040
PIN CONNECTION
MSC82040
GENERAL PURPOSE LINEAR APPLICATIONS
hermetical ly sealed
BRANDING
82040
DESCRIPTION
The MSC82040 is a hermetically sealed NPN
power transistor with a fishbone, emitter finger
ballasted geometry utilizing a refractory/gold metallization system. The device is designed specifically for Class A linear applications to provide
high gain and high output power at the 1.0 dB
compression point.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CE
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
Power Dissipation (see Safe Area) — W
Device Bias Current 200 mA
Collector-Emitter Bias Voltage* 20 V
Junction Temperature 200
Storage Temperature
Junction-Case Thermal Resistance* 20
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +200
−
°
°
°
C/W
C
C
October 1992
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MSC82040
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condition s
BV
BV
BV
I
CBO
EBO
CEO
CEO
h
FE
IC = 1mA IE = 0mA 45 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 5mA IB = 0mA 20 — — V
VCE = 18V — — 0. 5 mA
VCE = 5V IC = 100mA 15 — 120 —
DYNAMIC
Symbol Test Conditions
GP*f = 1.0 GHz P
∆GP*f = 1.0 GHz P
C
OB
* Note: VCE = 18V
f = 1 MHz VCB = 28 V — — 3.2 pF
IC
100mA
=
= 27 dBm 10.5 11.5 — dB
OUT
27 dBm
=
OUT
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
P
= 10 dB — — 1 d B
∆
OUT
Unit
Unit
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TYPICAL PERFORMANCE
TYPICAL POWER OUTPUT & GAIN @ 1dB
COMPRESSION POINT vs FREQUENCY
MSC82040
TYPICAL POWER OUTPUT & GAIN @
1dB COMPRESSION POINT vs
COLLECTOR CURRENT
MAXIMUM OPERATING AREA FOR
FORWARD BIAS OPERATION
TYPICAL LINEAR GAIN vs
COLLECTOR CURRENT
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MSC82040
TYPICAL S−PARAMETERS
VCE = 18 V
IC = 100 mA
Zg = 50 ohms
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TEST CIRCUIT
Ref.: Dwg. No. C127323
All dimensions are in inches.
Frequency 1.0 GHz
MSC82040
PACKAGE MECHANICAL DATA
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MSC82040
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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