Page 1
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.EMITT ER BALLASTED
. VSWR CAPABILITY
CONDITIONS
∞
.HERMETIC STRIPAC
. P
OUT
2.0 GHz
10 W MIN. WITH 5.2 dB GAIN @
=
:1 @ RATED
PACKAGE
MSC82010
RF & MICROWAVE TRAN SIST ORS
.250 2LFL (S010)
hermetically sealed
ORDER CODE
MSC82010
PIN CONNECTION
BRANDING
82010
DESC RIPTIO N
The MSC82010 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC82010 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to rated RF amplifier operation
Power Dissipation* 35 W
Device Current* 1.5 A
Collector-Supply Voltage* 35 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 5.0
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
°
°
C/W
C
C
October 1992
1/5
Page 2
MS C82 010
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 5mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 15mA RBE= 10Ω 45 — — V
VCB= 28V — — 5.0 mA
VCE= 5V IC= 1000mA 15 — 120 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf=2.0 GHz P
G
P
C
OB
f = 2.0 GHz P
f = 2.0 GHz P
f = 1 MHz V
3.0 W V
=
IN
3.0 W V
=
IN
3.0 W V
IN =
28 V — — 19 pF
=
CB
TYPICA L P ERFO R MA NCE
POWER O UTPUT vs FREQUENCY
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 10 11.5 — W
=
CC
28 V 35 38 — %
=
CC
28 V 5.2 5.8 — dB
CC =
COLLECTOR EFFICIENCY vs
FREQUENCY
Unit
Unit
2/5
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
Page 3
IMPEDA NCE DATA
TYPI CAL INPUT
IMPEDANCE
Z
IN
P
3.0 W
=
IN
V
28 V
=
CC
Normalized to 50 ohms
MS C820 10
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
P
V
OUT =
=
CC
Saturated
28 V
Normalized to 50 ohms
FREQ. ZIN(Ω)Z
CL
(Ω)
1.0 GHz 1.7 + j 4.2 5.7 + j 1.9
1.5 GHz 2.0 + j 7.2 2.8 − j 5.0
1.7 GHz 2.2 + j 8.8 2.5 − j 7.8
2.0 GHz 2.4 + j 12.0 2.0 − j 12.0
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Page 4
MS C82 010
TEST CIRCUIT
Ref.: Dwg. No. C125518
All dimensions are in inches.
Frequency 2.0 GHz
RF Amplifier Power Output Test
PACKAGE MECHANICAL DATA
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Page 5
MS C820 10
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents orother rights of third parties which may results from its use. No
license isgranted by implication or otherwiseunder any patent or patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascriticalcomponentsin life support devices orsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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5/5
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