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RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.EMITT ER BALLASTED
. VSWR CAPABILITY
CONDITIONS
:1 @ RATED
∞
.REFRACTORY/GOLD METALLIZATION
.HERMETIC STRIPAC
. P
OUT
@2.0GHz
3.0 W MIN. WITH 7. 8 dB GAIN
=
PACKAGE
ORDER CODE
MSC82003
PIN CONNECTION
MSC82003
.250 2LFL (S010)
hermetically sealed
BRANDING
82003
DESC RIPT ION
The MSC82003 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle underrated rated conditions. The
MSC82003 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
Power Dissipation* 21.8 W
Device Current* 600 mA
Collector-Supply Voltage* 35 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 8.0
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
°
°
C/W
C
C
October 1992
1/5
Page 2
MS C82003
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 1mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 5mA RBE= 10Ω 45 — — V
VCB= 28V — — 1.0 mA
VCE= 5V IC= 200mA 15 — 120 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf=2.0 GHz P
G
P
C
OB
f = 2.0 GHz P
f = 2.0 GHz P
f = 1 MHz V
0.5 W V
IN =
0.5 W V
=
IN
0.5 W V
=
IN
28 V — — 6.5 pF
=
CB
TYPICA L P ERFO R MA NCE
POWER OUTPUT vs FREQUENCY
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 3.0 3.3 — W
CC =
28 V 35 37 — %
=
CC
28 V 7.8 8.2 — dB
=
CC
COLLECTOR EFFICIENCY vs
FREQUENCY
Unit
Unit
2/5
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
Page 3
IMPEDA NCE DATA
TYPI CAL INPUT
IMPEDANCE
Z
IN
P
0.5 W
=
IN
V
28 V
=
CC
Normalized to 50 ohms
MS C82003
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
P
OUT =
V
CC
Saturated
28 V
=
Normalized to 50 ohms
FREQ. ZIN(Ω)Z
CL
(Ω)
1.0 GHz 4.4 + j 5.5 9.6 + j 16.0
1.5 GHz 4.5 + j 9.0 4.3 + j 7.0
1.7 GHz 4.5 + j 10.5 3.5 + j 4.0
2.0 GHz 4.6 + j 12.5 3.0 + j 1.0
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MS C82003
TEST CIRCUIT
Ref.: Dwg. No. C125518
All dimensions are in inches.
Frequency 2.0 GHz
RF Amplifier Power Output Test
PACKAGE MECHANICAL DATA
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Page 5
MS C82003
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementofpatents or other rights of third parties which may results from its use. No
license isgranted by implication orotherwise underany patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevices orsystemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
5/5
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