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RF & MICROWAVE TRANSISTORS
.REFRACTORY\GOLD METALLIZATION
.RUGGEDIZED VSWR 25:1
.INTERNAL INPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
.P
= 400 W MIN. WITH 6.5 dB GAIN
OUT
.400 x .500 2LFL (S038)
ORDER CO DE
MSC81400M
PIN CONNECTION
MSC81400M
AVIONICS APPLICATIONS
hermetical ly sealed
BRANDING
81400M
DESCRIPTION
The MSC81400M "Super Power" transistor is a
high peak pulse power device specifically designed for DME/TACAN avionics applications.
This device is capable of withstanding a minimum
25:1 load mismatch condition at any phase angle
under full rated conditions.
The MSC81400M is housed in the unique BIGPAC™ hermetic metal/ceramic package with internal input/output matching structures.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
P
DISS
I
C
V
CC
T
J
T
STG
THERMAL DATA
R
TH(j-c)
*Applies only to rated RF amplifier operation
Power Dissipation* (TC ≤ 80˚C) 1000 W
Device Current* 28 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature
Junction-Case Thermal Resistance* 0.12
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +200
−
°
°
°
C/W
C
C
October 1992
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MSC81400M
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condition s
BV
BV
BV
I
CBO
EBO
CER
CES
h
FE
IC = 15mA IE = 0mA 65 — — V
IE = 1mA IC = 0mA 3.5 — — V
IC = 50mA RBE = 10Ω 65 — — V
VCE = 50V — — 35 mA
VCE = 5V IC = 1A 15 — 120 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test C ond iti ons
P
OUT
η
cf = 1025 — 1150 MHz PIN = 90 W VCC = 50 V 40 — — %
G
P
Note: Pulse Widt h=10µSec
f = 1025 — 1150 MHz PIN = 90 W VCC = 50 V 400 450 — W
f = 1025 — 1150 MHz PIN = 90 W VCC = 50 V 6.5 — — dB
Duty Cycle=1%
Value
Min. Typ. Max.
Unit
Unit
TEST CIRCUIT
Ref.: Dwg. No. C125363
All dimensions are in inches.
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PACKAGE MECHANICAL DATA
MSC81400M
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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