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RF & MICROWAVE TRAN SIST ORS
.REFRACTORY/GOLD METALLIZATION
.RUGGEDIZED VSWR 20:1
.INTERNAL I NPUT/OUTPUT MATCHING
.LOW THERMAL RESISTANCE
.METAL/CERAMIC HERMETIC PACKAGE
.P
OUT =
DESC RIPT ION
The MSC81350M device is a high power pulsed
transistor specifically designed for IFF avionics
applications.
This device is capable of withstanding a minimum
20:1 load VSWR at any phase angle under full
rated conditions. Low RF thermal resistance and
semi automatic wire bonding techniques ensure
high reliability and product consistency.
The MSC81350M is housed in the unique
AMPAC package with internal input/output
matching structures.
350 W MIN. WITH 7.0 dB GAIN
MSC81350M
AVIONI CS APPLICAT IONS
.400 x .400 2NL F L (S04 2)
hermetically sealed
ORDER CODE
MSC81350M
PIN CONNECTION
1. Collector 3. Emitter
2. Base 4. Base
BRANDING
81350M
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
October 1992
Power Dissipation* (TC≤ 55°C) 720 W
Device Current* 19.8 A
Collector-Supply Voltage* 55 V
Junction Temperature (Pulsed RF Operation) 250
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 0.20
case
= 25°C)
°
°
°
C/W
C
C
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MS C81350M
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
EBO
CER
FE
IC= 10mA IE= 0mA 65 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 25mA RBE= 10Ω 65 — — V
VCE= 50V — — 25 mA
VCE= 5V IC= 1A 15 — 120 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
η
cf=1090 MHz P
G
P
Note: Pulse Width=10µSec
f = 1090 MHz P
f = 1090 MHz P
Duty Cycle=1%
70 W V
IN =
70 W V
=
IN
70 W V
=
IN
Value
Min. Typ. Max.
Value
Min. Typ. Max.
50 V 350 360 — W
CC =
50 V 40 44 — %
=
CC
50 V 7.0 7.1 — dB
=
CC
Unit
Unit
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IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
P
70 W
=
IN
V
50 V
=
CC
Normalized to 50 ohms
MSC81350M
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
P
70 W
IN =
V
50 V
=
CC
Normalized to 50 ohms
FREQ. ZIN(Ω)Z
CL
(Ω)
L=1025 MHz 5.0 + j 5.0 7.0 − j 2.5
M=1090 MHz 7.0 + j 2.5 7.5 − j 2.8
H=1150 MHz 3.6 + j 2.5 6.8 − j 2.7
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MS C81350M
TEST CIRCUIT
Ref.: Dwg. No. C127471
All dimensions are in inches.
PACKAGE MECHANICAL DATA
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MSC81350M
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementofpatents or other rights of third parties which may results from its use. No
license isgranted by implication orotherwise underany patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife supportdevicesor systemswithout express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
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