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RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.EMITT ER BALLASTED
. REFRACTORY/GOLD METALLIZATION
.VSWR CAPABILITY
CONDITIONS
.HERMETIC STRIPAC
. P
OUT
@1GHz
10 W MIN. WITH 10 dB GAIN
=
:1 @ RATED
∞
PACKAGE
ORDER CODE
MSC81058
PIN CONNECTION
MSC81058
.250 2LFL (S010)
hermetically sealed
BRANDING
81058
DESC RIPT ION
The MSC81058 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone, emitter ballasted geometry with a refractory/gold metallization system. This device is
capable of withstanding infinite load VSWR at any
phase angle under rated conditions.
The MSC81058 is designed for Class C amplifier
applications in the 0.4 - 1.2 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DATA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
Power Dissipation* 29 W
Device Current* 1.0 A
Collector-Supply Voltage* 35 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 6.0
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
°
°
°
C/W
C
C
October 1992
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MS C81058
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 1mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 10mA RBE=10Ω 45 — — V
VCB= 28V — — 2.5 mA
VCE= 5V IC= 500mA 15 — 120 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf=1.0 GHz P
G
P
C
OB
f = 1.0 GHz P
f = 1.0 GHz P
f = 1 MHz V
1.0 W V
IN =
1.0 W V
=
IN
1.0 W V
=
IN
28 V — — 10 pF
=
CB
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 10 11 — W
CC =
28 V 60 64 — %
=
CC
28 V 10 10.4 — dB
=
CC
Unit
Unit
TYPICA L P ERFO R MA NCE
POWER OUTPUT vs FR EQU EN C Y
FREQUENCY vs
COLLECTOR EFFICIENCY
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
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IMPEDA NCE DATA
TYPI CAL INPUT
IMPEDANCE
Z
IN
P
1.0 W
=
IN
V
28 V
=
CC
Normalized to 50 ohms
MS C81058
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
P
V
OUT =
=
CC
Saturated
28 V
Normalized to 50 ohms
FREQ. ZIN(Ω)Z
CL
(Ω)
0.4 GHz 2.3 + j 2.7 26.0 + j 16.0
0.6 GHz 2.5 + j 4.0 17.2 + j 13.0
0.8 GHz 2.8 + j 5.0 11.0 + j 9.5
1.0 GHz 3.0 + j 6.0 7.7 + j 6.3
1.2 GHz 3.3 + j 7.2 5.8 + j 3.5
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MS C81058
TEST CIRCUIT
Ref.: Dwg. No. C127320
All dimensions are in inches.
Frequency 1.0 GHz
PACKAGE MECHANICAL DATA
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MS C81058
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementofpatents or other rights of third parties which may results from its use. No
license isgrantedby implication orotherwiseunder any patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin lifesupportdevices orsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUPOF COMPANIES
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