Page 1
RF & MICROWAVE TRAN SIST ORS
GENERAL PURPOSE AMPLIFI ER APPLICAT IONS
.EMITT ER BALLASTED
. REFRACTORY/GOLD METALLIZATION
.LOW THERMAL RESISTANCE
.HERMETIC STRIPAC
. P
OUT
@1GHz
20 W MIN. WITH 10 dB GAIN
=
PACKAGE
.230 2L STUD (S016)
ORDER CODE
MSC81020
PIN CONNECTION
MSC81020
hermetically sealed
BRANDING
81020
DESC RIPT ION
The MSC81020 is a common base hermetically
sealed silicon NPN microwave tranisitor utilizing
a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is
designed for Class C amplifier applications in the
0.4 - 1.2 GHz frequency range.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
P
DISS
I
C
V
CC
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifier operation
Power Dissipation* 35 W
Device Current* 1.50 A
Collector-Supply Voltage* 35 V
Junction Temperature 200
Storage Temperature − 65 to +200
Junction-Case Thermal Resistance* 5.0
case
= 25°C)
1. Collector 3. Emitter
2. Base
°
°
°
C/W
C
C
October 1992
1/5
Page 2
MS C81020
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CBO
EBO
CER
CBO
h
FE
IC= 5mA IE= 0mA 45 — — V
IE= 1mA IC= 0mA 3.5 — — V
IC = 15mA RBE= 10Ω 45 — — V
VCB= 28V — — 5.0 mA
VCE= 5V IC= 1000mA 15 — 120 —
DYNAMIC
Symbol Test Cond itions
P
OUT
η
cf=1.0 GHz P
G
P
C
OB
f = 1.0 GHz P
f = 1.0 GHz P
f = 1 MHz V
2.0 W V
IN =
2.0 W V
=
IN
2.0 W V
=
IN
28 V — — 19 pF
=
CB
TYPICA L PERFO R MA NCE
POWER OUTPUT vs FREQUENCY
Value
Min. Typ. Max.
Value
Min. Typ. Max.
28 V 20 21 — W
CC =
28 V 55 58 — %
=
CC
28 V 10 10.2 — dB
=
CC
COLLECTOR EFFICIENCY
vs FREQUENCY
Unit
Unit
2/5
RELATIVE POWER OUTPUT vs
COLLECTOR VOLTAGE
Page 3
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
P
3.0 W
=
IN
V
28 V
=
CC
Normalized to 50 ohms
MS C81020
TYPICAL COLLECTOR
LOAD I MPEDANCE
Z
CL
FREQ. ZIN(Ω)Z
CL
(Ω)
0.4 GHz 1.3 + j 1.7 13.3 + j 9.8
0.6 GHz 1.5 + j 2.8 9.7 + j 7.0
0.8 GHz 1.6 + j 3.4 7.2 + j 4.0
1.0 GHz 1.8 + j 4.2 5.8 + j 2.0
1.2 GHz 2.0 + j 5.5 4.0 + j 1.0
P
V
OUT =
=
CC
Saturated
28 V
Normalized to 50 ohms
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Page 4
MS C81020
TEST CIRCUIT
Ref.: Dwg. No. C127320
All dimensions are in inches.
Frequency 1.0 GHz
PACKAGE MECHANICAL DATA
4/5
Page 5
MS C81020
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringementofpatents or other rights of third parties which may results from its use. No
license isgrantedby implication orotherwiseunder any patentor patent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin lifesupportdevices orsystems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All RightsReserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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5/5
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