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MSC750SMA170B4 Silicon Carbide N-Channel Power MOSFET
Product Overview
The silicon carbide (SiC) power MOSFET productlinefrom Microsemi increases the performanceover silicon
MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications.
The MSC750SMA170B4 device is a 1700 V, 750 mΩ SiC MOSFET in a TO-247 package with a source sense.
Features
The following are key features of the MSC750SMA170B4 device:
Low capacitances and low gate charge
•
Fast switching speed due to low internal gate resistance (ESR)
•
Stable operation at high junction temperature, T
•
Fast and reliable body diode
•
Superior avalanche ruggedness
•
RoHS compliant
•
Benets
The following are benets of the MSC750SMA170B4 device:
High efciency to enable lighter, more compact system
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Simple to drive and easy to parallel
•
Improved thermal capabilities and lower switching losses
•
Eliminates the need for external freewheeling diode
•
Lower system cost of ownership
•
Applications
The MSC750SMA170B4 device is designed for the following applications:
PV inverter, converter, and industrial motor drives
•
Smart grid transmission and distribution
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Induction heating and welding
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H/EV powertrain and EV charger
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Power supply and distribution
•
J(max)
= 175 °C
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Device Specications
Device Specications
This section shows the specications of the MSC750SMA170B4 device.
Absolute Maximum Ratings
The following table shows the absolute maximum ratings of the MSC750SMA170B4 device.
Table 1 • Absolute Maximum Ratings
UnitRatingsCharacteristicSymbol
DSS
D
5Continuous drain current at TC= 100 °C
I
DM
GS
D
1
12Pulsed drain current
V1700Drain source voltageV
A7Continuous drain current at TC= 25 °CI
V23 to –10Gate-source voltageV
W68Total power dissipation at TC= 25 °CP
W/°C0.46Linear derating factor
Note:
Repetitive rating: pulse width and case temperature limited by maximum junction temperature.
1.
The following table shows the thermal and mechanical characteristics of the MSC750SMA170B4 device.
Table 2 • Thermal and Mechanical Characteristics
UnitMaxTypMinCharacteristicSymbol
θJC
°C/W2.191.46Junction-to-case thermal resistanceR
J
STG
L
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°C175–55Operating junction temperatureT
150–55Storage temperatureT
260Soldering temperature for 10 seconds (1.6 mm from case)T
lbf-in10Mounting torque, 6-32 or M3 screw
N-m1.1
oz0.22Package weightWt
g6.2
2
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Device Specications
Electrical Performance
The following table shows the static characteristics of the MSC750SMA170B4 device. TJ= 25 °C unless
otherwise specied.
Table 3 • Static Characteristics
UnitMaxTypMinTest ConditionsCharacteristicSymbol
(BR) DSS
R
DS(on)
GS(th)
DSS
GS(th)
/ΔT
1
= 100 µAGate-source threshold voltageV
DS,ID
= 100 µAThreshold voltage coefcientΔV
J
DS,ID
V1700VGS= 0 V, ID= 100 µADrain-source breakdown voltageV
mΩ940750VGS= 20 V, ID= 2.5 ADrain-source on resistance
V3.251.8VGS= V
mV/°C–5.7VGS= V
µA100VDS= 1700 V, VGS= 0 VZero gate voltage drain currentI
500VDS= 1700 V, VGS= 0 V
TJ= 125 °C
GSS
nA±100VGS= 20 V/–10 VGate-source leakage currentI
Note:
Pulse test: pulse width < 380 µs, duty cycle < 2%.
1.
The following table shows the dynamic characteristics of the MSC750SMA170B4 device. TJ= 25 °C unless
otherwise specied.
Table 4 • Dynamic Characteristics
UnitMaxTypMinTest ConditionsCharacteristicSymbol
iss
rss
oss
g
gs
gd
d(on)
f
d(off)
Input capacitanceC
pF184VGS= 0 V, VDD= 1360 V
VAC= 25 mV, ƒ = 1 MHz
2Reverse transfer capacitanceC
14Output capacitanceC
Total gate chargeQ
nC11VGS= –5 V/20 V, VDD= 1200 V
ID= 2.5 A
2.9Gate-source chargeQ
2.1Gate-drain chargeQ
Turn-on delay timet
ID= 5 A, R
Freewheeling diode =
G(ext)
= 8 Ω,
12Voltage fall timet
ns13VDD= 1200 V, VGS= –5 V/20 V
MSC750SMA170B4 (VGS= –5 V)
7Turn-off delay timet
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Device Specications
UnitMaxTypMinTest ConditionsCharacteristicSymbol
r
on
off
d(on)
f
d(off)
r
on
off
AS
8Voltage rise timet
µJ107Turn-on switching energyE
17Turn-off switching energyE
Turn-on delay timet
ID= 5 A, R
Freewheeling diode =
= 8 Ω, TJ= 150 °C
G(ext)
12Voltage fall timet
ns13VDD= 1200 V, VGS= –5 V/20 V
MSC750SMA170B4 (VGS= –5 V)
7Turn-off delay timet
8Voltage rise timet
µJ185Turn-on switching energyE
20Turn-off switching energyE
Ω2.89f = 1 MHz, 25 mV, drain shortEquivalent series resistanceESR
µs2.5VDS= 1200 V, VGS= 20 VShort circuit withstand timeSCWT
mJ360VDS= 150 V, VGS= 20 V, ID= 2.5 AAvalanche energy,single pulseE
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Device Specications
The following table shows the body diode characteristics of the MSC750SMA170B4 device. TJ= 25 °C unless
otherwise specied.
Table 5 • Body Diode Characteristics
UnitMaxTypMinTest ConditionsCharacteristicSymbol
SD
rr
rr
RRM
Reverse recovery timet
VDD= 1200 V, dl/dt = –2000 A/µs
Drive Rg = 8 Ω
Typical Performance Curves
This section shows the typical performance curves of the MSC750SMA170B4 device.
V3.8ISD= 2.5 A, VGS= 0 VDiode forward voltageV
V3.9ISD= 2.5 A, VGS= –5 V
ns18ISD= 5 A, VGS= –5 V,
nC120Reverse recovery chargeQ
A3.0Reverse recovery currentI
Figure 1 • Drain Current vs. V
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DS
Figure 2 • Drain Current vs. V
DS
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Device Specications
Figure 3 • Drain Current vs. V
DS
Figure 5 • RDS(on) vs. Junction Temperature
Figure 4 • Drain Current vs. V
DS
Figure 6 • Gate Charge Characteristics
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Device Specications
Figure 7 • Capacitance vs. Drain-to-Source Voltage
Figure 9 • IDvs. VDS3rdQuadrant Conduction
Figure 8 • IDvs. Gate-to-Source Voltage
Figure 10 • IDvs. VDS3rdQuadrant Conduction
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Device Specications
Figure 11 • Switching Energy vs. VDS& I
Figure 13 • Switching Energy vs. Rg
D
Figure 12 • Switching Energy vs. VDS& I
D
Figure 14 • Switching Energy vs. Temperature
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Device Specications
Figure 15 • Threshold Voltage vs. Junction Temp.
Figure 17 • Maximum Transient Thermal Impedance
Figure 16 • Forward Safe Operating Area
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Package Specication
Package Specication
This section shows the package specication of the MSC750SMA170B4 device.
Package Outline Drawing
The following gure illustrates the TO-247 4-lead package outline of the MSC750SMA170B4 device.
Figure 18 • Package Outline Drawing
The following table shows the TO-247 4-lead dimensions and should be used in conjunction with the package
outline drawing.
Table 6 • TO-247-4L Dimensions
Max (in.)Min (in.)Max (mm)Min (mm)Symbol
0.2040.1935.174.90A
0.0830.0732.111.85B
0.0990.0892.512.25C
0.0270.0220.680.55D
0.2260.2165.745.49E
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Package Specication
Max (in.)Min (in.)Max (mm)Min (mm)Symbol
0.1440.1403.663.56F
0.242 BSC6.15 BSCG
0.8300.82021.0820.83H
0.8000.78020.3219.81I
0.0520.0421.331.07J
0.6310.62116.0315.77K
0.5570.54714.1513.89L
0.6630.64016.8516.25M
0.1080.0792.752.00N
0.2950.2807.507.10O
0.113 BSC2.87 BSCP
0.200 BSC5.08 BSCQ
0.100 BSC2.54 BSCR
DrainTerminal 1
SourceTerminal 2
Source senseTerminal 3
GateTerminal 4
DrainTerminal 5
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050-7774 | July 2020 | Released
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