Datasheet MSC400SMA330B4 Datasheet

MSC400SMA330B4

3300 V, 400 mΩ SiC N-Channel Power MOSFET

Product Overview

The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon
MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The
MSC400SMA330B4 device is a 3300 V, 400 mΩ SiC MOSFET in a TO-247 4-lead package with a source sense.

Features

The following are key features of the MSC400SMA330B4 device:

• Low capacitances and low gate charge

• Fast switching speed due to low internal gate resistance (ESR)

• Stable operation at high junction temperature, T

• Fast and reliable body diode

• Superior avalanche ruggedness

• RoHS compliant

Benefits

The following are benefits of the MSC400SMA330B4 device:

• High efficiency to enable lighter, more compact system

• Simple to drive and easy to parallel

• Improved thermal capabilities and lower switching losses

• Eliminates the need for external freewheeling diode

• Lower system cost of ownership

Applications

The MSC400SMA330B4 device is designed for the following applications:

• PV inverter, converter, and industrial motor drives

• Smart grid transmission and distribution

• Induction heating and welding

• H/EV powertrain and EV charger

• Power supply and distribution

J(max)

= 150 °C

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and its subsidiaries

Datasheet

DS00004433A-page 1

1. Device Specifications

This section shows the specifications of the MSC400SMA330B4 device.

1.1 Absolute Maximum Ratings

The following table shows the absolute maximum ratings of the MSC400SMA330B4 device.

Table 1-1. Absolute Maximum Ratings

Symbol Parameter Ratings Unit

MSC400SMA330B4

Device Specifications

V

DSS

I

D

Drain source voltage 3300 V

Continuous drain current at TC = 25 °C 11 A

Continuous drain current at TC = 100 °C 7

I

DM

V

GS

P

D

Pulsed drain current

Gate-source voltage 23 to –10 V

Total power dissipation at TC = 25 °C 131 W

1

27

Linear derating factor 1.05 W/°C

Note: 

1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature.

The following table shows the thermal and mechanical characteristics of the MSC400SMA330B4 device.

Table 1-2. Thermal and Mechanical Characteristics

Symbol Characteristic/Test Conditions Min Typ Max Unit

R

θJC

T

J

T

STG

T

L

Junction-to-case thermal resistance 0.64 0.96 °C/W

Operating junction temperature –55 150 °C

Storage temperature –55 150 °C

Soldering temperature for 10 seconds (1.6

300 °C

mm from case)

Mounting torque, 6-32 or M3 screw 10 lbf-in

Wt Package weight 0.22 oz

1.2 Electrical Performance

The following table shows the static characteristics of the MSC400SMA330B4 device. TJ = 25 °C unless otherwise
specified.

Table 1-3. Static Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

(BR)DSS

R

DS(on)

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Drain-source breakdown voltage VGS = 0 V, ID = 100 μA 3300 V

Drain-source on resistance

1.1 N-m

6.2 g

1

VGS = 20 V, ID = 5 A 416 520 mΩ

Datasheet

DS00004433A-page 2

MSC400SMA330B4

Device Specifications

...........continued

Symbol Characteristic Test Conditions Min Typ Max Unit

V

I

DSS

GS(th)

Gate-source threshold voltage VGS = VDS, ID = 1 mA 1.9 2.97 V

Zero gate voltage drain current VDS = 3300 V, VGS = 0 V 100 µA

VDS = 3300 V, VGS = 0 V, TJ =

500

125 °C

I

GSS

Gate-source leakage current VGS = 20 V/–10 V ±100 nA

Note: 

1. Pulse test: pulse width < 380 μs, duty cycle < 2%.

The following table shows the dynamic characteristics of the MSC400SMA330B4 device. TJ = 25 °C unless otherwise
specified.

Table 1-4. Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

C

C

Q

Q

Q

t

d(on)

t

r

t

d(off)

t

f

E

E

iss

rss

oss

g

gs

gd

on

off

Input capacitance VGS = 0 V

Reverse transfer
capacitance

Output capacitance 18

VDD = 2400 V

VAC = 25 mV

ƒ = 200 kHz

Total gate charge VDD = 2600 V

Gate-source charge 10

Gate-drain charge 10

VGS = –5 V/20 V

ID = 5 A

Turn-on delay time VDD = 2310 V

Voltage rise time 8

Turn-off delay time 16

Voltage fall time 20

Turn-on switching energy 750 µJ

Turn-off switching energy 120

VGS = –5 V/20 V

ID = 10 A

R

= 16 Ω

g(ext)

Freewheeling diode =
MSC400SMA330B4 (VGS = –5
V) (reference Fig. 1-17)

579 pF

2

37 nC

16 ns

ESR Gate equivalent series

f = 1 MHz, 25 mV, drain short 3.7 Ω

resistance

The following table shows the body diode characteristics of the MSC400SMA330B4 device. TJ = 25 °C unless
otherwise specified.

Table 1-5. Body Diode Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

SD

Diode forward voltage ISD = 5 A, VGS = 0 V 4.0 V

ISD = 5 A, VGS = –5 V 4.0

t

rr

Q

rr

I

RRM

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and its subsidiaries

Reverse recovery time ISD = 10 A, VDD = 2310 V, Drive

Reverse recovery charge 175 nC

Rg = 16 Ω, VGS = –5 V, dl/dt =
–7900 A/μs

14 ns

Reverse recovery current 32 A

Datasheet

DS00004433A-page 3

1.3 Typical Performance Curves

This section shows the typical performance curves of the MSC400SMA330B4 device.

MSC400SMA330B4

Device Specifications

Figure 1-1. Drain Current vs. VDS at T

Figure 1-3. Drain Current vs. VDS at V

J

GS

Figure 1-2. Drain Current vs. VDS at V

Figure 1-4. Drain Current vs. VDS at V

GS

GS

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Datasheet

DS00004433A-page 4

MSC400SMA330B4

Device Specifications

Figure 1-5. R

Figure 1-7. Capacitance vs. Drain-to-Source Voltage Figure 1-8. ID vs. VDS 3rd Quadrant Conduction

vs. Junction Temperature Figure 1-6. Gate Charge Characteristics

DS(on)

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Datasheet

DS00004433A-page 5

MSC400SMA330B4

Device Specifications

Figure 1-9. ID vs. VDS 3rd Quadrant Conduction Figure 1-10. Switching Energy Eon vs. V

Figure 1-11. Switching Energy Eoff vs. V

DS

& I

D

Figure 1-12. Switching Energy vs. Rg

DS

& I

D

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Datasheet

DS00004433A-page 6

MSC400SMA330B4

Device Specifications

Figure 1-13. Switching Energy vs. Temperature Figure 1-14. Threshold Voltage vs. Junction Temp.

Figure 1-15. Forward Safe Operating Area

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Datasheet

DS00004433A-page 7

Figure 1-16. Maximum Transient Thermal Impedance

MSC400SMA330B4

Device Specifications

The following figure shows the switching waveform diagram of the MSC400SMA330B4 device.

Figure 1-17. Switching Waveform

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Datasheet

DS00004433A-page 8

2. Package Specification

This section shows the package specification of the MSC400SMA330B4 device.

2.1 Package Outline Drawing

The following figure illustrates the TO-247-4L package outline of the MSC400SMA330B4 device.

Figure 2-1. Package Outline Drawing

MSC400SMA330B4

Package Specification

The following table shows the TO-247-4L dimensions and should be used in conjunction with the package outline
drawing.

Table 2-1. TO-247-4L Dimensions

Symbol Min (mm) Max (mm) Min (in.) Max (in.)

A 4.90 5.17 0.193 0.204

B 1.85 2.11 0.073 0.083

C 2.25 2.51 0.089 0.099

D 0.55 0.68 0.022 0.027

E 5.49 5.74 0.216 0.226

F 3.56 3.66 0.140 0.144

G 6.15 BSC 0.242 BSC

H 20.83 21.08 0.820 0.830

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Datasheet

DS00004433A-page 9

MSC400SMA330B4

Package Specification

...........continued

Symbol Min (mm) Max (mm) Min (in.) Max (in.)

I 19.81 20.32 0.780 0.800

J 1.07 1.33 0.042 0.052

K 15.77 16.03 0.621 0.631

L 13.89 14.15 0.547 0.557

M 16.25 16.85 0.640 0.663

N 2.00 2.75 0.079 0.108

O 7.10 7.50 0.280 0.295

P 2.87 BSC 0.113 BSC

Q 5.08 BSC 0.200 BSC

R 2.54 BSC 0.100 BSC

Terminal 1 Drain

Terminal 2 Source

Terminal 3 Source sense

Terminal 4 Gate

Terminal 5 Drain

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Datasheet

DS00004433A-page 10

3. Revision History

Table 3-1. Revision History

Revision Date Description

A 02/2022 Document created.

MSC400SMA330B4

Revision History

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Datasheet

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MSC400SMA330B4

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MSC400SMA330B4

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ISBN: 978-1-5224-9733-2

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MSC400SMA330B4

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