Datasheet MSC23B236D-60DS8, MSC23B236D-70BS8, MSC23B236D-70DS8, MSC23B236D-60BS8 Datasheet (OKI)

Semiconductor

MSC23B236D-xxBS8/DS8

2,097,152-wo rd x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE

This vers i on: Mar. 3. 1999

DESCRIPTION

The MSC23B236D-xxBS8/DS8 is a fully decoded, 2,097,152-word x 36-bit CMOS dynamic random access memory
module com posed of four 16M b DRAMs in SOJ packages and four 2Mb DRAMs in SOJ packages m ounted with
eight decoupl ing capacit ors on a 72-pin gl ass epoxy single-i nline package. Thi s module supports any applicat ion
where high density and lar ge c apac ity of stor age memory ar e r equired.

FEATURES

· 2,097,152-word x 36- bit organization

· 72-pin Single Inline Memory M odule
MSC23B236D-xxBS8 : Gold tab
MSC23B236D-xxDS8 : Sol der tab

· Singl e +5V supply ± 10% tolerance

· Input : TTL compatibl e

· Output : TTL compatible, 3-state

· Refresh : 1024cycles/16ms

· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability

· Fast page mode c apability

PRODUCT FAMILY

Access Time (Max. ) Power Dissipation

Family

t

RAC

t

AA

t

CAC

Cycle

Time

(Min.)

Operating (Max.) Standby (Max.)

MSC23B236D-60BS8/DS8 60ns 30ns 15ns 110ns 2365mW
MSC23B236D-70BS8/DS8 70ns 35ns 20ns 130ns 2145mW

44mW

Semiconductor MSC23B236D

MODULE OUTLINE

1

72

R1.57

6.35

1.04Typ.

1.27±0.1

95.25

2.03Typ.

6.35Typ.

Typ.

6.35

Typ.

10.16

(

3.18

19.0±0.2

101.19Typ.

107.95±0.2

*1

3.38Typ.

5.7Min.

9.3Max.

+0.1

-0.08

1.27

(Unit : mm )

MSC23B236D-xxBS8/DS 8

*1 The common size difference of the board width 12.5mm of its height is specified as ±0.2.

The value above 12.5mm is specified as ±0.5.

Semiconductor MSC23B236D

PIN C ONFIGURATION

Pin No. Pin Name Pin No. Pin Nam e Pin No. Pin Nam e Pin No. Pin Nam e

1VSS19 NC 37 DQ17 55 DQ12
2 DQ0 20 DQ4 38 DQ35 56 DQ30
3 DQ18 21 DQ22 39 V

SS

57 DQ13
4 DQ1 22 DQ5 40 /CAS0 58 DQ31
5 DQ19 23 DQ23 41 /CAS2 59 V

CC

6 DQ2 24 DQ6 42 /CAS3 60 DQ32
7 DQ20 25 DQ24 43 /CAS1 61 DQ14
8 DQ3 26 DQ7 44 /RAS0 62 DQ33
9 DQ21 27 DQ25 45 /RAS1 63 DQ15

10 V

CC

28 A7 46 NC 64 DQ34
11 NC 29 NC 47 /WE 65 DQ16
12 A0 30 V

CC

48 NC 66 NC
13 A1 31 A8 49 DQ9 67 PD1
14 A2 32 A9 50 DQ27 68 PD2
15 A3 33 /RAS3 51 DQ10 69 PD3
16 A4 34 /RAS2 52 DQ28 70 PD4
17 A5 35 DQ26 53 DQ11 71 NC
18 A6 36 DQ8 54 DQ 29 72 V

SS

Presence Detect Pins

Pin No. Pin Name

MSC23B236D

-60BS8/DS8

MSC23B236D

-70BS8/DS8

67 PD1 NC NC
68 PD2 NC NC
69 PD3 NC V

SS

70 PD4 NC NC

Semiconductor MSC23B236D

BLOCK DIAGRAM

/WE

/CAS1

/CAS0

A0-A9

/CAS3

/CAS2

DQ0

A0-A9

DQ1

DQ3

DQ2

DQ4

DQ5

/RAS

/LCAS

/UCAS

DQ6

DQ1

DQ2

DQ3

/RAS1

VCCV

SS

C1-C8

DQ8

VSS/WE

/OE

V

CC

DQ4

DQ5

DQ6

DQ7

DQ7

DQ9

DQ9

DQ11

DQ10

DQ12

DQ13

DQ14

DQ10

DQ11

DQ12

DQ16

DQ13

DQ14

DQ15

DQ16

DQ15

A0-A9

DQ1

DQ3

DQ2

DQ4

DQ5

/RAS

/LCAS

/UCAS

DQ6

DQ8

VCC/WE

/OE

VSSDQ7

DQ9

DQ11

DQ10

DQ12

DQ13

DQ14

DQ16

DQ15

/RAS0

/RAS2

/RAS3

DQ18

A0-A9

DQ1

DQ3

DQ2

DQ4

DQ5

/RAS

/LCAS

/UCAS

DQ6

DQ19

DQ20

DQ21

DQ8

VSS/WE

/OE

V

CC

DQ22

DQ23

DQ24

DQ25

DQ7

DQ27

DQ9

DQ11

DQ10

DQ12

DQ13

DQ14

DQ28

DQ29

DQ30

DQ16

DQ31

DQ32

DQ33

DQ34

DQ15

A0-A9

DQ1

DQ3

DQ2

DQ4

DQ5

/RAS

/LCAS

/UCAS

DQ6

DQ8

VCC/WE

/OE

VSSDQ7

DQ9

DQ11

DQ10

DQ12

DQ13

DQ14

DQ16

DQ15

DQ8

DQ1

DQ2

DQ17

DQ1

DQ2

A0-A9

/RAS

/CAS1

/CAS2

/WE

/OE

VSSVCCA0-A9

/RAS

/CAS1

/CAS2

/WE

/OE

VCCVSSDQ26

DQ1

DQ2

DQ35

DQ1

DQ2

A0-A9

/RAS

/CAS1

/CAS2

/WE

/OE

VSSVCCA0-A9

/RAS

/CAS1

/CAS2

/WE

/OE

VCCV

SS

Semiconductor MSC23B236D

ELECTRICAL CHARAC TERISTICS

Absolute Maximum Ratings

Parameter Symbol Rating Unit

Voltage on Any Pin Relative to V

SS

VIN, V

OUT

-1.0 to +7.0 V

Voltage on VCC Supply Relative to V

SS

V

CC

-1.0 to +7.0 V

Short Circuit Output Curr ent I

OS

50 mA
Power Dissipation PD *8W
Operating Temperature T

OPR

0 to +70 °C

Storage Temperature T

STG

-40 to +125 °C

* Ta = 25°C

Recommended Operating Conditions

( Ta = 0°C to +70°C )

Paramete r Symbol Min. Typ. Max. Unit

V

CC

4.5 5.0 5.5 V

Power Supply Voltage

V

SS

000V

Input High Voltage V

IH

2.4 - 6.5 V

Input Low Voltage V

IL

-1.0 - 0.8 V

Capacitance

( VCC = 5V ± 10%, Ta = 25°C, f = 1 MHz )

Paramete r Symbol Typ. Max. Uni t

Input Capacitance (A0 - A9) C

IN1

-53pF

Input Capacitance (/WE) C

IN2

-65pF

Input Capacitance (/RAS0- /RAS3) C

IN3

-20pF

Input Capacitance (/CAS0- /CAS3) C

IN4

-35pF

I/O Capacitance (DQ0 - DQ35) C

DQ

-20pF

Note: Capacitance measured with Boonton Meter.

Semiconductor MSC23B236D

DC Characteristics

(VCC = 5V ± 10%, Ta = 0°C to +70°C )

MSC23B236D

-60BS8/DS8

MSC23B236D

-70BS8/DS8

Parame ter

Symbo

l

Condition

Min. Max. Min. Max.

Unit Note

Input Leakage Current I

LI

0V ≤ VIN ≤ 6.5V;
All other pins not
under test = 0V

-80 80 -80 80 µA

Output Leakage Current I

LO

DQ disable
0V ≤ V

OUT

≤ 5.5V

-20 20 -20 20 µA

Output High Voltage V

OH

IOH = -5.0mA 2.4 V

CC

2.4 V

CC

V

Output Low Voltage V

OL

IOL = 4.2mA 0 0. 4 0 0.4 V

Average Power Supply Current
(Operating)

I

CC1

/RAS, /CAS cycling,
t

RC

= min.

- 430 - 390 mA 1, 2

/RAS, /CAS = V

IH

-16-16mA1

Power supply current
(Standby)

I

CC2

/RAS, /CAS
≥ V

CC

-0.2V

-8-8mA1

Average Power Supply Current
(/RAS only refresh)

I

CC3

/RAS cycling,
/CAS = V

IH

,

t

RC

= min.

- 430 - 390 mA 1, 2

Average Power Supply Current
(/CAS before /RAS refresh)

I

CC6

/RAS cycling,
/CAS before /RAS

- 430 - 390 mA 1, 2

Average Power Supply Current
(Fast Page Mode)

I

CC7

/RAS = VIL,
/CAS cycling,
t

PC

= min.

- 390 - 360 mA 1, 3

Notes: 1. ICC Max. is specified as ICC for output open conditi on.

2. Address can be changed once or less while / RA S = V

IL

.

3. Address can be changed once or less while / CA S = V

IH

.

Semiconductor MSC23B236D

AC Characteristics (1/2)

(VCC = 5V ± 10%, Ta = 0°C to +70°C ) Note: 1, 2, 3

MSC23B236D

-60BS8/DS8

MSC23B236D

-70BS8/DS8

Paramete r Symbol

Min. Max. Min. Max.

Unit Note

Random Read or Writ e Cycle Time t

RC

110 - 130 - ns

Fast Page Mode Cycle Time t

PC

40 - 45 - ns

Access Time from /RAS t

RAC

- 60 - 70 ns 4, 5, 6

Access Time from /CAS t

CAC

- 15 - 20 ns 4, 5

Access Time from Column Address t

AA

- 30 - 35 ns 4, 6

Access Time from /CAS Precharge t

CPA

- 35 - 40 ns 4

Output Low Impedance Time from /CAS t

CLZ

0-0-ns4

/CAS to Data Output Buffer Turn-off Delay Time t

OFF

0 15 0 20 ns 7

Transition Time t

T

3 50 3 50 ns 3

Refresh Period t

REF

-16-16ms

/RAS Precharge Tim e t

RP

40 - 50 - ns

/RAS Pulse Width t

RAS

60 10K 70 10K ns

/RAS Pulse Width ( Fast Page Mode) t

RASP

60 100K 70 100K ns

/RAS Hold Time t

RSH

15 - 20 - ns

/CAS Precharge Time (Fast Page Mode) t

CP

10 - 10 - ns

/CAS Pulse Width t

CAS

15 10K 20 10K ns

/CAS Hold Time t

CSH

60 - 70 - ns

/CAS to /RAS Pr echarge Time t

CRP

5-5-ns

/RAS Hold Time from /CAS Precharge t

RHCP

35 - 40 - ns

/RAS to /CAS Delay Time t

RCD

20 45 20 50 ns 5

/RAS to Column Address Delay Time t

RAD

15 30 15 35 ns 6

Row Address Set-up Time t

ASR

0-0-ns

Row Address Hol d Time t

RAH

10 - 10 - ns

Column Address Set-up Time t

ASC

0-0-ns

Column Address Hol d Time t

CAH

15 - 15 - ns

Column Address to /RAS Lead Time t

RAL

30 - 35 - ns

Read Command Set-up Time t

RCS

0-0-ns

Read Command Hold Time t

RCH

0-0-ns8

Read Command Hold Time referenced to /RAS t

RRH

0-0-ns8

Semiconductor MSC23B236D

AC Characteristics (2/2)

(VCC = 5V ± 10%, Ta = 0°C to +70°C ) Note: 1, 2, 3

MSC23B236D

-60BS8/DS8

MSC23B236D

-70BS8/DS8

Paramete r Symbol

Min. Max. Min. Max.

Unit Note

Writ e Command Set-up Time t

WCS

0-0-ns

Writ e Command Hold Time t

WCH

10 - 15 - ns

Writ e Command Pulse Wi dth t

WP

10 - 10 - ns

Writ e Command to /RAS Lead Time t

RWL

15 - 20 - ns

Writ e Command to /CAS Lead Time t

CWL

15 - 20 - ns

Data-in Set-up Time t

DS

0-0-ns

Data-i n Ho ld Time t

DH

15 - 15 - ns

/CAS Active Delay Time from /RAS Precharge t

RPC

5-5-ns

/RAS to /CAS Set-up Time
(/CAS before /RAS)

t

CSR

10 - 10 - ns

/RAS to /CAS Hold Time
(/CAS before /RAS)

t

CHR

10 - 10 - ns

Semiconductor MSC23B236D

Notes: 1. A start-up delay of 200µs is required after power-up, fol lowed by a minimum of eight initialization cycles

(/RAS only r efresh or /CAS before /RAS refresh) befor e pr oper devic e oper ation is achieved.

2. The AC characteristic s assumes t

T

= 5ns.

3. V

IH

(Min.) and VIL(Max.) are ref erence lev els f or m easuring input tim ing signals. Transiti on ti me (tT) are

measured between V

IH

and VIL.

4. This parameter is m easured wit h a load circuit equivalent t o 2TTL loads and 100pF.

5. Operation within the t

RCD

(Max.) limit ensures that t

RAC

(Max.) can be met.

t

RCD

(Max.) is specified as a reference point only. If t

RCD

is greater than the specified t

RCD

(Max.) limit, then

the access tim e is controll ed by t

CAC

.

6. Operation within the t

RAD

(Max.) limit ensures that t

RAC

(Max.) can be met.

t

RAD

(Max.) is specified as a reference point only. If t

RAD

is greater than the specified t

RAD

(Max.) limit, then

the access tim e is controll ed by t

AA

.

7. t

OFF

(Max.) define the time at which the output achieves the open circuit condition and are not referenced

to output voltage levels.

8. t

RCH

or t

RRH

must be satisfi ed for a read cycle.