Datasheet MMBT 3904LT1G Datasheet

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Page 1

MMBT3904L, SMMBT3904L

General Purpose Transistor

NPN Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

• S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage V

Collector−Base Voltage V

Emitter−Base Voltage V

Collector Current − Continuous I

Collector Current − Peak (Note 3) I

CEO

CBO

EBO

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR− 5 Board

(Note 1) @T Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Total Device Dissipation Alumina Substrate, (Note 2)

= 25°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature TJ, T

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. FR− 5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

= 25°C

stg

40 Vdc

60 Vdc

6.0 Vdc

200 mAdc

900 mAdc

225

1.8

556 °C/W

300

2.4

417 °C/W

−55 to +150 °C

mW/°C

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COLLECTOR

BASE

EMITTER

SOT−23 (TO−236)

CASE 318

STYLE 6

MARKING DIAGRAM

1AM M G

1AM = Specific Device Code M = Date Code* G = Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

Device Package Shipping

MMBT3904LT1G SMMBT3904LT1G

MMBT3904LT3G SMMBT3904LT3G

†For information on tape and reel specifications,

including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

SOT−23

(Pb−Free)

SOT−23

(Pb−Free)

3000 / Tape &

Reel

10,000 / Tape &

Reel

†

November, 2012 − Rev. 12

1 Publication Order Number:

MMBT3904LT1/D

Page 2

MMBT3904L, SMMBT3904L

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (I

= 1.0 mAdc, IB = 0) V

Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) I

Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) I

ON CHARACTERISTICS (Note 4)

DC Current Gain

= 0.1 mAdc, VCE = 1.0 Vdc)

= 1.0 mAdc, VCE = 1.0 Vdc)

= 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

Base −Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc)

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (I

= 10 mAdc, VCE = 20 Vdc, f = 100 MHz) f

Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) C

Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) C

Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h

Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h

Small−Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h

Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) h

Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)

SWITCHING CHARACTERISTICS

Delay Time

Rise Time t

Storage Time

Fall Time t

(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,

= 10 mAdc, IB1 = 1.0 mAdc)

(VCC = 3.0 Vdc,

= 10 mAdc, IB1 = IB2 = 1.0 mAdc)

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

Symbol Min Max Unit

(BR)CEO

(BR)CBO

(BR)EBO

CEX

CE(sat)

BE(sat)

obo

ibo

40 − Vdc

60 − Vdc

6.0 − Vdc

− 50 nAdc

40 70

100

60 30

−

300

−

Vdc

−

0.2

0.3

Vdc

0.65

−

0.85

0.95

300 − MHz

− 4.0 pF

− 8.0 pF

1.0 10

0.5 8.0 X 10

100 400 −

1.0 40

mmhos

NF − 5.0 dB

− 35

− 200

− 50

−

− 4

DUTY CYCLE = 2% 300 ns

-0.5 V

+10.9 V

10 k

< 1 ns

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time

Equivalent Test Circuit

+3 V

10 < t

< 4 pF*

DUTY CYCLE = 2%

275

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< 500 ms

-9.1 V′

+10.9 V

10 k

1N916

< 1 ns

Figure 2. Storage and Fall Time

Equivalent Test Circuit

+3 V

275

< 4 pF*

Page 3

7.0

5.0

3.0

CAPACITANCE (pF)

2.0

1.0

0.1

0.2 0.3 0.5 0.7

1.0 2.0 3.0 5.0 7.0 10 20

REVERSE BIAS VOLTAGE (VOLTS)

MMBT3904L, SMMBT3904L

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25°C T

= 125°C

5000

3000

2000

1000

ibo

obo

30 40

700

500

300

Q, CHARGE (pC)

200

100

70 50

1.0

VCC = 40 V

= 10

C/IB

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

500

300 200

100

TIME (ns)

1.0 2.0 3.0 10 20

5.0 7.0 30 50

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn − On Time

500

300

IC/IB = 20

200

100

30 20

′

t , STORAGE TIME (ns)

1.0 2.0 3.0 10 20

IC/IB = 10

5.0 7.0

IC, COLLECTOR CURRENT (mA)

td @ VOB = 0 V

30 50

IC/IB = 10

tr @ VCC = 3.0 V

40 V

15 V

2.0 V

705100

t′s = ts - 1/8 t I

= I

IC/IB = 20

IC/IB = 10

705100

Figure 4. Charge Data

500

300 200

VCC = 40 V I

= 10

C/IB

100

t , RISE TIME (ns)

200

1.0 2.0 3.0 10 20

5.0 7.0 30 50

705100

200

IC, COLLECTOR CURRENT (mA)

Figure 6. Rise Time

500

300 200

IC/IB = 20

100

70 50

t , FALL TIME (ns)

IC/IB = 10

200

1.0 2.0 3.0 10 20

5.0 7.0

30 50

IC, COLLECTOR CURRENT (mA)

VCC = 40 V I

= I

705100

200

Figure 7. Storage Time

Figure 8. Fall Time

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Page 4

MMBT3904L, SMMBT3904L

TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

NF, NOISE FIGURE (dB)

300

200

SOURCE RESISTANCE = 200 W I

= 1.0 mA

SOURCE RESISTANCE = 500 W I

= 100 mA

0.1

0.2 0.4

SOURCE RESISTANCE = 200 W I

= 0.5 mA

SOURCE RESISTANCE = 1.0 k I

= 50 mA

1.0 2.0 4.0 10 20

f, FREQUENCY (kHz)

Figure 9.

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

NF, NOISE FIGURE (dB)

100

h PARAMETERS

f = 1.0 kHz

0.1 1.0 2.0 4.0 10 20

0.2 0.4

IC = 1.0 mA

IC = 0.5 mA

RS, SOURCE RESISTANCE (k OHMS)

Figure 10.

100

IC = 50 mA

IC = 100 mA

100

h , CURRENT GAIN

0.1 0.2 1.0 2.0

0.3 0.5 3.0 IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

5.0

2.0

1.0

0.5

h , INPUT IMPEDANCE (k OHMS)

0.2

0.1 0.2 1.0 2.0

0.3 0.5 3.0 IC, COLLECTOR CURRENT (mA)

5.0 10

h , OUTPUT ADMITTANCE ( mhos)

0.1 0.2 1.0 2.0

0.3 0.5 3.0 IC, COLLECTOR CURRENT (mA)

Figure 12. Output Admittance

-4

7.0

5.0

3.0

2.0

1.0

0.7

h , VOLTAGE FEEDBACK RATIO (X 10 )

0.5

0.1 0.2 1.0 2.0

0.3 0.5 3.0 IC, COLLECTOR CURRENT (mA)

5.0 10

5.0

Figure 13. Input Impedance

Figure 14. Voltage Feedback Ratio

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Page 5

1000

100

h , DC CURRENT GAIN

TJ = +150°C

+25°C

-55°C

MMBT3904L, SMMBT3904L

TYPICAL STATIC CHARACTERISTICS

VCE = 1.0 V

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

1.0

0.8

0.6

0.4

0.2

0.1

1.0

IC, COLLECTOR CURRENT (mA)

100

1000

Figure 15. DC Current Gain

TJ = 25°C

IC = 1.0 mA

10 mA 30 mA 100 mA

0.1

0.070.050.030.020.01

IB, BASE CURRENT (mA)

0.5 2.0 3.0 100.2 0.3

1.00.7 5.0 7.0

Figure 16. Collector Saturation Region

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Page 6

MMBT3904L, SMMBT3904L

0.8

0.7

0.6

0.5

0.4

0.3

, COLLECTOR−EMITTER

0.2

SATURATION VOLTAGE (V)

CE(sat)

0.1

IC/IB = 10

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

Figure 17. Collector Emitter Saturation Voltage

vs. Collector Current

1.4

1.2

VCE = 1 V

1.0

−55°C

0.8

25°C

0.6

, BASE−EMITTER VOLTAGE (V)

150°C

0.4

BE(on)

0.2

IC, COLLECTOR CURRENT (A)

Figure 19. Base Emitter Voltage vs. Collector

Current

1000

VCE = 1 V T

= 25°C

25°C

150°C

−55°C

10.10.010.001

10.10.010.0010.0001

1.4 IC/IB = 10

1.2

1.0

−55°C

0.8

0.6

0.4

SATURATION VOLTAGE (V)

0.2

25°C

150°C

, BASE−EMITTER

BE(sat)

Figure 18. Base Emitter Saturation Voltage vs.

Collector Current

1.0

0.5

-0.5

-1.0

COEFFICIENT (mV/ C)

-1.5

-2.0 0 60 80 120 140 160

qVC FOR V

qVB FOR V

20 40

CE(sat)

BE(sat)

100

IC, COLLECTOR CURRENT (mA)

Figure 20. Temperature Coefficients

1 s

100 ms

Thermal Limit

0.1

+25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C

180

1 ms

10 ms

10.10.010.0010.0001

200

100

PRODUCT (MHz)

, CURRENT−GAIN−BANDWIDTH

IC, COLLECTOR CURRENT (mA)

Figure 21. Current Gain Bandwidth vs.

Collector Current

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IC (A)

0.01

Single Pulse Test @ T

= 25°C

0.001

10001001010.1

1001010.10.01

VCE (Vdc)

Figure 22. Safe Operating Area

Page 7

MMBT3904L, SMMBT3904L

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

SEE VIEW C

0.25

VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

DIMAMIN NOM MAX MIN

A1 0.01 0.06 0.10 0.001

b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004

STYLE 6:

PIN 1. BASE

MILLIMETERS

0.89 1.00 1.11 0.035

0.35 0.54 0.69 0.014 0.021 0.029

2.10 2.40 2.64 0.083 0.094 0.104

0 −−− 10 0 −−− 10q°°°°

2. EMITTER

3. COLLECTOR

INCHES

NOM MAX

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

SOLDERING FOOTPRINT*

0.95

0.037

0.9

0.035

0.8

0.031

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

0.037

SCALE 10:1

2.0

0.079

inches

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MMBT3904LT1/D