Page 1
MMBF170L, NVBF170L
Power MOSFET
500 mA, 60 V, N−Channel SOT−23
Features
• NVBF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
Drain−Gate Voltage V
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
Drain Current − Continuous
− Pulsed
V
DSS
DGS
V
GSM
I
I
DM
GS
D
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR− 5 = 1.0 0.75 0.062 in.
P
D
R
q
JA
stg
60 Vdc
60 Vdc
± 20
± 40
0.5
0.8
225
1.8mWmW/°C
556 °C/W
−55 to
+150
Vdc
Vpk
Adc
°C
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500 mA, 60 V
R
DS(on)
1
MARKING DIAGRAM
& PIN ASSIGNMENT
= 5 W
SOT−23
CASE 318
STYLE 21
N−Channel
3
2
3
Drain
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 9
6Z MG
G
2 SourceGate 1
6Z = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 2 of this data sheet.
1 Publication Order Number:
MMBF170LT1/D
Page 2
MMBF170L, NVBF170L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mA)
Gate−Body Leakage Current, Forward (V
= 15 Vdc, VDS = 0) I
GSF
V
(BR)DSS
GSS
60 − Vdc
− 10 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) V
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA) r
On−State Drain Current (VDS = 25 Vdc, VGS = 0) I
GS(th)
DS(on)
D(off)
0.8 3.0 Vdc
− 5.0
− 0.5
W
mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
− 60 pF
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 1)
Turn−On Delay Time
Turn−Off Delay Time t
(VDD = 25 Vdc, ID = 500 mA, R
Figure 1
gen
= 50 W)
t
d(on)
d(off)
− 10
− 10
ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping
MMBF170LT1G SOT−23 (TO−236)
3000 / Tape & Reel
(Pb−Free)
MMBF170LT3G SOT−23 (TO−236)
10000 / Tape & Reel
(Pb−Free)
NVBF170LT1G* SOT−23 (TO−236)
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
†
PULSE
GENERATOR
50 W
+25 V
t
on
t
d(on)
V
in
20 dB 50 W
125 W
40 pF
ATTENUATOR
TO SAMPLING
SCOPE
50 W INPUT
V
out
OUTPUT
INVERTED
V
out
10%
INPUT
t
r
90%
t
d(off)
90%
50%
10%
V
50 W 1 MW
in
PULSE WIDTH
(Vin AMPLITUDE 10 VOLTS)
Figure 1. Switching Test Circuit Figure 2. Switching Waveform
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2
90%
50%
t
off
t
f
Page 3
MMBF170L, NVBF170L
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
VGS = 10 V
1.0
TJ = 25°C
0.8
0.6
0.4
, DRAIN CURRENT (A)
D
I
0.2
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Region Characteristics Figure 4. Transfer Characteristics
8
TJ = 25°C
7
6
5
4
3
2
VGS = 4.5 V
1
, DRAIN−TO−SOURCE RESISTANCE (W)
0
DS(on)
R
VGS = 10 V
0.65 0.75
ID, DRAIN CURRENT (A)
Figure 5. On−Resistance vs. Drain Current and
Gate Voltage
5.0 V
4.5 V
4.2 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
0.850.550.450.350.250.15
1.0
0.8
0.6
0.4
, DRAIN CURRENT (A)
D
0.2
I
0
7543210
15
12.5
10
7.5
Q
5
2.5
, GATE−TO−SOURCE VOLTAGE (V)
GS
0
V
Drain−to−Source Voltage vs. Total Charge
VDS ≥ 10 V
TJ = 150°C
TJ = 25°C
TJ = −55°C
4321
QT
V
DS
gs
Q
gd
10.50
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate−to−Source and
V
GS
ID = 0.5 A
TJ = 25°C
1.5
30
25
20
15
10
5
0
2
87656
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
0.24
VGS = 0 V
0.22
TJ = 25°C
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
, SOURCE CURRENT (A)
S
0.04
I
0.02
0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 7. Diode Forward Voltage vs. Current
http://onsemi.com
3
0.90.80.70.60.50.4
1.00.30.20.1
Page 4
MMBF170L, NVBF170L
TYPICAL ELECTRICAL CHARACTERISTICS
2.4
VGS = 10 V
2.2
ID = 200 mA
2.0
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
0.8
, STATIC DRAIN-SOURCE ON-RESISTANCE
0.6
0.4
DS(on)
−60 −20 20 60 100 140 − 60 − 20 20 60 100 140
r
T, TEMPERATURE (°C)
Figure 8. Temperature versus Static
Drain−Source On−Resistance
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
, THRESHOLD VOLTAGE (NORMALIZED)
0.7
GS(th)
V
VDS = V
ID = 1.0 mA
T, TEMPERATURE (°C)
Figure 9. Temperature versus Gate
Threshold Voltage
GS
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4
Page 5
MMBF170L, NVBF170L
l
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
D
H
SEE VIEW C
E
c
0.25
3
E
12
b
e
q
A
L
A1
L1
VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015
c 0.09 0.13 0.18 0.003
D 2.80 2.90 3.04 0.110
E 1.20 1.30 1.40 0.047
e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
L1
H
E
STYLE 21:
PIN 1. GATE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104
0 −−− 10 0 −−− 10q°°°°
2. SOURCE
3. DRAIN
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.9
0.035
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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0.037
SCALE 10:1
2.0
0.079
ǒ
inches
mm
Ǔ
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For additional information, please contact your loca
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MMBF170LT1/D
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