Datasheet MMBF 170LT1G Datasheet

Page 1
MMBF170L, NVBF170L
Power MOSFET
500 mA, 60 V, N−Channel SOT−23
Features
Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
DrainSource Voltage V
DrainGate Voltage V
GateSource Voltage
Continuous
Nonrepetitive (tp 50 ms)
Drain Current Continuous
Pulsed
V
DSS
DGS
V
GSM
I
I
DM
GS
D
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1.) TA = 25°C Derate above 25°C
Thermal Resistance, JunctiontoAmbient
Junction and Storage Temperature TJ, T
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 0.75 0.062 in.
P
D
R
q
JA
stg
60 Vdc
60 Vdc
± 20 ± 40
0.5
0.8
225
1.8mWmW/°C
556 °C/W
55 to +150
Vdc Vpk
Adc
°C
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500 mA, 60 V
R
DS(on)
1
MARKING DIAGRAM
& PIN ASSIGNMENT
= 5 W
SOT23 CASE 318 STYLE 21
NChannel
3
2
3
Drain
© Semiconductor Components Industries, LLC, 2013
August, 2013 Rev. 9
6Z MG
G
2 SourceGate 1
6Z = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
1 Publication Order Number:
MMBF170LT1/D
Page 2
MMBF170L, NVBF170L
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted)
C
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage (VGS = 0, ID = 100 mA)
GateBody Leakage Current, Forward (V
= 15 Vdc, VDS = 0) I
GSF
V
(BR)DSS
GSS
60 Vdc
10 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) V
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 200 mA) r
OnState Drain Current (VDS = 25 Vdc, VGS = 0) I
GS(th)
DS(on)
D(off)
0.8 3.0 Vdc
5.0
0.5
W
mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
60 pF
(VDS = 10 Vdc, VGS = 0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 1)
TurnOn Delay Time
TurnOff Delay Time t
(VDD = 25 Vdc, ID = 500 mA, R
Figure 1
gen
= 50 W)
t
d(on)
d(off)
10
10
ns
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device Package Shipping
MMBF170LT1G SOT23 (TO236)
3000 / Tape & Reel
(PbFree)
MMBF170LT3G SOT23 (TO236)
10000 / Tape & Reel
(PbFree)
NVBF170LT1G* SOT23 (TO236)
3000 / Tape & Reel
(PbFree)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP
Capable.
PULSE
GENERATOR
50 W
+25 V
t
on
t
d(on)
V
in
20 dB 50 W
125 W
40 pF
ATTENUATOR
TO SAMPLING SCOPE 50 W INPUT
V
out
OUTPUT
INVERTED
V
out
10%
INPUT
t
r
90%
t
d(off)
90%
50%
10%
V
50 W 1 MW
in
PULSE WIDTH
(Vin AMPLITUDE 10 VOLTS)
Figure 1. Switching Test Circuit Figure 2. Switching Waveform
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2
90%
50%
t
off
t
f
Page 3
MMBF170L, NVBF170L
TYPICAL ELECTRICAL CHARACTERISTICS
1.2 VGS = 10 V
1.0
TJ = 25°C
0.8
0.6
0.4
, DRAIN CURRENT (A)
D
I
0.2
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. OnRegion Characteristics Figure 4. Transfer Characteristics
8
TJ = 25°C
7
6
5
4
3
2
VGS = 4.5 V
1
, DRAINTOSOURCE RESISTANCE (W)
0
DS(on)
R
VGS = 10 V
0.65 0.75
ID, DRAIN CURRENT (A)
Figure 5. OnResistance vs. Drain Current and
Gate Voltage
5.0 V
4.5 V
4.2 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
0.850.550.450.350.250.15
1.0
0.8
0.6
0.4
, DRAIN CURRENT (A)
D
0.2
I
0
7543210
15
12.5
10
7.5
Q
5
2.5
, GATE−TO−SOURCE VOLTAGE (V)
GS
0
V
DraintoSource Voltage vs. Total Charge
VDS 10 V
TJ = 150°C
TJ = 25°C
TJ = 55°C
4321
QT
V
DS
gs
Q
gd
10.50
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate−to−Source and
V
GS
ID = 0.5 A TJ = 25°C
1.5
30
25
20
15
10
5
0
2
87656
V
DS
, DRAINTOSOURCE VOLTAGE (V)
0.24 VGS = 0 V
0.22 TJ = 25°C
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
, SOURCE CURRENT (A)
S
0.04
I
0.02
0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 7. Diode Forward Voltage vs. Current
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3
0.90.80.70.60.50.4
1.00.30.20.1
Page 4
MMBF170L, NVBF170L
TYPICAL ELECTRICAL CHARACTERISTICS
2.4 VGS = 10 V
2.2 ID = 200 mA
2.0
1.8
1.6
1.4
1.2
(NORMALIZED)
1.0
0.8
, STATIC DRAIN-SOURCE ON-RESISTANCE
0.6
0.4
DS(on)
60 20 20 60 100 140 60 20 20 60 100 140
r
T, TEMPERATURE (°C)
Figure 8. Temperature versus Static
DrainSource OnResistance
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
, THRESHOLD VOLTAGE (NORMALIZED)
0.7
GS(th)
V
VDS = V ID = 1.0 mA
T, TEMPERATURE (°C)
Figure 9. Temperature versus Gate
Threshold Voltage
GS
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4
Page 5
MMBF170L, NVBF170L
l
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
D
H
SEE VIEW C
E
c
0.25
3
E
12
b
e
q
A
L
A1
L1
VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
DIMAMIN NOM MAX MIN
A1 0.01 0.06 0.10 0.001
b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070
L 0.10 0.20 0.30 0.004
L1
H
E
STYLE 21:
PIN 1. GATE
MILLIMETERS
0.89 1.00 1.11 0.035
0.35 0.54 0.69 0.014 0.021 0.029
2.10 2.40 2.64 0.083 0.094 0.104 0 −−− 10 0 −−− 10q°°°°
2. SOURCE
3. DRAIN
INCHES
NOM MAX
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
SOLDERING FOOTPRINT*
0.95
0.95
0.037
0.9
0.035
0.8
0.031
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
0.037
SCALE 10:1
2.0
0.079
ǒ
inches
mm
Ǔ
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MMBF170LT1/D
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