Datasheet MMBF170, BS170 Datasheet (Fairchild)

March 2010

BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

General Description

These N-Channel enhancement mode field ef fec t transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC.

Features

■ High density cell design for low R

■ Voltage controlled small signal switch.

■ Rugged and reliable.

■ High saturation current capability.

These products are particularly sui ted for low vol tage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

BS170 MMBF170

D

S

D

G

S

TO-92

G

SOT-23

DS(ON)

.

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter BS170 MMBF170 Units

V

DSS

V

DGR

V

GSS

I

D

T

, T

J

STG

T

L

Thermal Characteristics T

Drain-Source Voltage 60 V Drain-Gate Voltage (R

≤ 1MΩ)60V

GS

Gate-Source V oltage ± 20 V Drain Current - Continuous 500 500

- Pulsed 1200 800

mA

Operating and Storage Temperature Range - 55 to 150 °C Maximum Lead Temperature for Soldering

300 °C

Purposes, 1/16" from Case for 10 Seconds

= 25°C unless otherwi s e noted

A

Symbol Parameter BS170 MMBF170 Units

P

D

R

θJA

Maximum Power Dissipation Derate above 25°C

830

6.6

300

2.4

mW

mW/°C

Thermal Resistance, Junction to Ambient 150 417 °C/W

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

Electrical Characteristics T

=25°C unless otherwise noted

A

Symbol Parameter Conditions Type Min. Typ. Max. Units

OFF CHARACTERISTICS

BV

I

DSS

I

GSSF

ON CHARACTERISTICS (Notes 1)

V

GS(th)

R

DS(ON)

g

Dynamic Characteristics

C C C

Switching Characteristics (Notes 1)

Drain-Source Breakdown Voltage VGS = 0V, ID = 100μAAll60 V

DSS

Zero Gate Voltage Drain Current VDS = 25V, VGS = 0V All 0.5 μA Gate - Body Leakage, Forward VGS = 15V, VDS = 0V All 10 nA

Gate Threshold Voltage VDS = VGS, ID = 1mA All 0.8 2.1 3 V Static Drain-Source On-Resistance VGS = 10V, ID = 200mA All 1.2 5 Ω Forward Transconductance VDS = 10V, ID = 200mA BS170 320 mS

FS

≥ 2 V

V

DS

= 200mA

I

D

Input Capacitance VDS = 10V, VGS = 0V,

iss

Output Capacitance All 17 30 pF

oss

Reverse Transfer Capacitance All 7 10 pF

rss

Turn-On Time VDD = 25V, ID = 200mA,

t

on

Turn-Off Time VDD = 25V, ID = 200mA,

t

off

f = 1.0MHz

= 10V, R

V

GS

= 25V, ID = 500mA,

V

DD

= 10V, R

V

GS

= 10V, R

V

GS

= 25V, ID = 500mA,

V

DD

= 10V, R

V

GS

DS(on)

GEN

,

= 25Ω

= 50Ω

= 25Ω

= 50Ω

MMBF170 320

All 24 40 pF

BS170 10 ns

MMBF170 10

BS170 10 ns

MMBF170 10

Note:

1. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%.

Ordering Information

Part Number Package Package Type Lead Frame Pin array

BS170 TO-92 BULK STRAIGHT D G S BS170_D26Z TO-92 Tape and Reel FORMING D G S BS170_D27Z TO-92 Tape and Reel FORMING D G S BS170_D74Z TO-92 AMMO FORMING D G S BS170_D75Z TO-92 AMMO FORMING D G S

MMBF170 SOT-23 Tape and Reel

Typical Electrical Characteristics

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics (continued)

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

Typical Electrical Characteristics (continued)

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

Mechanical Dimensions ( TO-92 )

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

TO-92

Dimensions in Millimeters

SOT-23 Std Tape and Reel Data

SOT23-3L Packaging Configuration: F igure 1.0

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

Cus tomized Lab el

SOT23-3L Packaging Information

Packaging Option

Packaging type

Qty per Reel/Tube/Bag 3,000 10,000

Reel Size

Box Dimension (mm) 193x 183x 80 355x 333x4 0

Max qty per Box 15, 000 30,000

Weight per unit (gm ) 0.0082 0.0082

Weight per Reel (kg) 0. 1175 0. 4006

Note/Comments

S tandard

(no flow code)

TN R

7" Di a

D87Z

TN R

13"

Antis tatic Cover Tape

F63TNR Lab el

Packaging Description:

S OT23- 3L parts ar e shipped i n tape. The carrier t ape is made from a dis s ipative ( carbon filled) polyc arbonate res in. T he cove r tape i s a m ultilayer film (H eat Ac tivated Adhes ive in nat ure) pr imarily c omposed of pol yester film, adhes ive l ayer, s ealan t, and anti- static s prayed ag ent. Thes e re eled parts in s tandard option ar e shipped with 3,000 units per 7" or 177mm diamete r reel. The r eels ar e dark blue in color and is made o f polystyrene p las tic (antistatic coated) . O ther option come s in 10, 000 units per 13" or 330c m diameter reel. T his and s ome other options ar e desc ribed in the P a cka ging Information table.

Thes e f ull reels are i ndividually labeled and placed inside a s tandard imme diate box made o f r ecyclable corrugated brown paper w ith a F airc hild l ogo printing. O ne box contains five r eels maximum. And these immediate boxes are placed ins ide a labe led s hipping box w hich comes in

E mbosse d

Carri er Tape

different s izes depending on the number of pa rts s hipped.

3P 3P 3P 3P

SOT23-3L Unit Orientation

B arcode L a bel

B arcode

355m m x 333m m x 40m m

Lab el

Intermedi ate c ontainer f or 13" re el option

B arcode L a bel s ample

LO T: CB VK 741B 019

FS I D: MMS Z5221B

D/C1: D9842AB QT Y1: SPEC REV: D/C2: Q TY 2: CP N: FA IRCHI LD S E MIC ONDUCT OR C O RP O RA TIO N (F63 TNR)

QT Y: 3000

SPEC :

B arcode Lab el

193m m x 183m m x 80m m

P izza B ox for S tandard O ption

SOT23-3L Tape Leader and Trailer Configuration: F igure 2.0

C arrier Tape

C over T ape

Tra iler Ta pe 300mm mi nimum or 75 em pty pock ets

C omponents

Leade r T ape 500mm mi nimum or 125 empty pockets

SOT-23 Std Tape and Reel Data, continued

SOT23-3L Embossed Carrier Tape Configuration: Figure 3.0

T

B0

Wc

D0P0 P2

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

D1

E1

W

F

E2

Tc

K0

P1

A0

User Direction of Feed

Dimensions are in millimeter

Pkg type

SOT-23

(8mm)

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

SOT23-3L Reel Configuration: Figure 4.0

A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

3.15

2.77

8.0

1.55

1.125

1.75

6.25

+/-0.10

+/-0.3

+/-0.05

+/-0.125

+/-0.10

rotational and lateral movem ent requirements (see sketches A, B, and C).

B0

20 deg maximum component rotation

Sketch A (Side or Front Sectional View)

Component Rotation

3.50

min

+/-0.05

20 deg maximum

A0

Sketch B (T op View)

Component Rotation

W1 Measured at Hub

4.0 +/-0.1

Typical component cavity center line

Typical component center line

Dim A

Max

4.0 +/-0.1

1.30

0.228 +/-0.013

5.2 +/-0.3

0.5mm maximum

+/-0.10

0.5mm maximum

Sketch C (Top View)

Component la teral movement

0.06 +/-0.02

Dim A

max

Dim N

See detail AA

7" Diameter Option

B Min

Dim C

13" Diameter Option

See detail AA

W2 max Measured at Hub

W3

Dim D

min

DETAIL AA

Dimensions are in i nches and millimeters

Tape Size

8mm 7" Dia

8mm 13" Dia

Reel

Option

Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)

7.00

0.059

177.8

13.00 330

1.5

0.059

1.5

512 +0.020/-0.008 13 +0.5/-0.2

0.795

2.165550.331 +0.059/-0.000

20.2

0.795

4.00

20.2

100

8.4 +1.5/0

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.567

14.4

0.311 - 0.429

7.9 - 10. 9

0.311 - 0.429

7.9 - 10. 9

October 2004, Rev. D1

Mechanical Dimensions ( SOT-23 )

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor

SOT-23

Dimensions in Millimeters

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As used herein:

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2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any w arranty issues that may arise. F airchild will n ot provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

Rev. I47

Datasheet MMBF170, BS170 Datasheet (Fairchild) [ru]

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