Datasheet MJ 15024 ONS Datasheet

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ON Semiconductor

Silicon Power Transistors

The MJ15022 and MJ15024 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.

• High Safe Operating Area (100% Tested) —

2 A @ 80 V

• High DC Current Gain —

= 15 (Min) @ IC = 8 Adc

h

FE

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage
Collector Current — Continuous

Peak (1)
Base Current — Continuous
Total Power Dissipation @ TC = 25C

ОООООООООО

Derate above 25C

Operating and Storage Junction

Temperature Range

ОООООООООО

Symbol

V

CEO

V

CBO

V

EBO

V

CEX

I

C

I

B

P

D

ÎÎ

TJ, T

stg

ÎÎ

MJ15022

200
350

MJ15024

250
400

5

400

16
30

5

250

ООООО

1.43

–65 to +200

ООООО

Unit

Vdc
Vdc
Vdc
Vdc
Adc

Adc

Watts

Î

W/C

C

Î

NPN

MJ15022
MJ15024

*ON Semiconductor Preferred Device

16 AMPERE

SILICON

POWER TRANSISTORS

200 AND 250 VOLTS

250 WATTS

CASE 1–07

TO–204AA

(TO–3)

*

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle  10%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev . 9

Symbol

R

θ

JC

Max

0.70

C/W

1 Publication Order Number:

Unit

MJ15022/D

MJ15022 MJ15024

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ELECTRICAL CHARACTERISTICS (T

= 25C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I

= 100 mAdc, IB = 0) MJ15022

C

ОООООООООООООООООООО

Collector Cutoff Current

ОООООООООООООООООООО

(V

= 200 Vdc, V

CE

= 250 Vdc, V

(V

CE

ОООООООООООООООООООО

= 1.5 Vdc) MJ15022

BE(off)

= 1.5 Vdc) MJ15024

BE(off)

MJ15024

Collector Cutoff Current

(V

= 150 Vdc, IB = 0) MJ15022

CE

ОООООООООООООООООООО

= 200 vdc, IB = 0) MJ15024

(V

CE

Emitter Cutoff Current

ОООООООООООООООООООО

(V

= 5 Vdc, IB = 0)

CE

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(V

= 50 Vdc, t = 0.5 s (non–repetitive))

CE

ОООООООООООООООООООО

= 80 Vdc, t = 0.5 s (non–repetitive))

(V

CE

ON CHARACTERISTICS

DC Current Gain

ОООООООООООООООООООО

(I

= 8 Adc, VCE = 4 Vdc)

C

= 16 Adc, VCE = 4 Vdc)

(I

C

ОООООООООООООООООООО

Collector–Emitter Saturation Voltage

(I

= 8 Adc, IB = 0.8 Adc)

C

ОООООООООООООООООООО

= 16 Adc, IB = 3.2 Adc)

(I

C

Base–Emitter On Voltage

(I

= 8 Adc, VCE = 4 Vdc)

ОООООООООООООООООООО

C

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

(I

= 1 Adc, VCE = 10 Vdc, f

C

Output Capacitance

ОООООООООООООООООООО

(V

= 10 Vdc, IE = 0, f

CB

test

= 1 MHz)

test

= 1 MHz)

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle  2%.

Symbol

V

CEO(sus)

ÎÎÎ

I

CEX

ÎÎÎ

ÎÎÎ

I

CEO

ÎÎÎ

I

EBO

ÎÎÎ

I

S/b

ÎÎÎ

h

FE

ÎÎÎ

ÎÎÎ

V

CE(sat)

ÎÎÎ

V

BE(on)

ÎÎÎ

f

T

C

ob

ÎÎÎ

Min

200

Î

250

Î

—

Î

—

—

Î

—
—

Î

5

Î

2

Î

15

5

Î

—

Î

—
—

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4

—

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Max

—

ÎÎ

—

ÎÎ

250

ÎÎ

250

500

ÎÎ

500
500

ÎÎ

—

ÎÎ

—

ÎÎ

60
—

ÎÎ

1.4

ÎÎ

4.0

2.2

ÎÎ

—

500

ÎÎ

Unit

Î

µAdc

Î

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µAdc

Î

µAdc

Î

Adc

Î

—

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Î

Vdc

Î

Vdc

Î

MHz

pF

Î

100

50

T

20

10

5.0

BONDING WIRE LIMITED

1.0

THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN

, COLLECTOR CURRENT (AMPS)

C

I

0.2

LIMITED

0.1

0.1 0.2 0.5 10 1 k

20

50 250

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. Active–Region Safe Operating Area

= 25°C

C

There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – V
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

The data of Figure 1 is based on T
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values Ion than the limitations imposed by
second breakdown.

500100

http://onsemi.com

2

= 200C; TC is

J(pk)

CE

4000
3000

1000

500

C, CAPACITANCE (pF)

100

40

0.3

C

ib

C

ob

5.0

V

, REVERSE VOLTAGE (VOLTS)

R

Figure 2. Capacitances

MJ15022 MJ15024

TYPICAL CHARACTERISTICS

T

= 25°C

J

10010

50

3003010.5

9

8

7

6

5

4

3

2

1

0

, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)

T

f

0.1 0.3 0.5

Figure 3. Current–Gain — Bandwidth Product

T
V
f

1.0 5.0

2.0 10

IC, COLLECTOR CURRENT (AMPS)

= 25°C

J

CE

Tes t

= 10 V
= 1 MHz

200

100

50

20

10

, DC CURRENT GAIN

FE

h

5.0

1.0

0.2 10 205.02.01.00.5

T

= 100°C

J

T

= 25°C

J

IC, COLLECTOR CURRENT (AMPS)

Figure 4. DC Current Gain

1.8

1.4

VCE = 4 V

V, VOLTAGE (VOLTS)

1.8

1.4

1.0

0.8

0.2

0

0.15

T

= 25°C

J

V

@ VCE = 4 V

BE(on)

100°C

V

@ IC/IB = 10

25°C

CE(sat)

0.5

, COLLECTOR CURRENT (AMPS)

I

C

Figure 5. “On” Voltage

T

= 25°C

J

100°C

2.01.0

10

205.0

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

CE

V

1.0

0.6

0.2

8 A

IC = 4 A

0

0.03

1.0 305.02.00.5

IB, BASE CURRENT (AMPS)

Figure 6. Collector Saturation Region

http://onsemi.com

3

16 A

100.20.1

MJ15022 MJ15024

PACKAGE DIMENSIONS

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

A

N

C

E

2 PL

D

0.13 (0.005) Y

U

V

H

L

2

1

G

K

M

–Y–

–T–

SEATING
PLANE

M

Q

T

M

B

–Q–

0.13 (0.005) T

M

M

Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

A 1.550 REF 39.37 REF
B --- 1.050 --- 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N --- 0.830 --- 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

MILLIMETERSINCHES

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MJ15022/D